Micron Technology Inc. MT47H128M4CF-25E:G Memory ICsDRAM 400MHz Tray
MT47H128M4CF-25E:G
Memory Format: DRAM, Clock Frequency: 400MHz, Terminal Position: BOTTOM, Number of Pins: 60Pins
RoHS Compliant
Datasheet Inquiry
Min.: 1 Mult.: 1
1616-535-MT47H128M4CF-25E:G
60-TFBGA
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MT47H128M4CF-25E:G Tech Specifications
MT47H128M4CF-25E:G Tech Specifications
Micron Technology Inc. MT47H128M4CF-25E:G technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT47H128M4CF-25E:G.
| Product Attribute | Attribute Value | |
|---|---|---|
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 60-TFBGA | |
| Number of Pins | 60Pins | |
| Memory Types | Volatile | |
| Current - Supply (Nom) | 125mA | |
| Operating Temperature | 0°C~85°C TC | |
| Packaging | Tray | |
| Published | 2010 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Number of Terminations | 60Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN SILVER COPPER | |
| Additional Feature | AUTO/SELF REFRESH |
| Product Attribute | Attribute Value | |
|---|---|---|
| HTS Code | 8542.32.00.28 | |
| Voltage - Supply | 1.8V | |
| Terminal Position | BOTTOM | |
| Peak Reflow Temperature (Cel) | 260 | |
| Number of Functions | 1Function | |
| Terminal Pitch | 0.8mm | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Base Part Number | MT47H128M4 | |
| Memory Size | 512Mb 128M x 4 | |
| Number of Ports | 1Port | |
| Clock Frequency | 400MHz | |
| Access Time | 400ps | |
| Memory Format | DRAM | |
| Memory Interface | Parallel | |
| Data Bus Width | 4b | |
| Organization | 128MX4 | |
| Output Characteristics | 3-STATE |
| Product Attribute | Attribute Value | |
|---|---|---|
| Memory Width | 4 | |
| Write Cycle Time - Word, Page | 15ns | |
| Address Bus Width | 16b | |
| Density | 512 Mb | |
| Standby Current-Max | 0.007A | |
| Max Frequency | 800MHz | |
| I/O Type | COMMON | |
| Voltage - Supply (Max) | 1.9V | |
| Voltage - Supply (Min) | 1.7V | |
| Refresh Cycles | 8192 | |
| Sequential Burst Length | 48 | |
| Interleaved Burst Length | 48 | |
| Length | 10mm | |
| Height Seated (Max) | 1.2mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
MT47H128M4CF-25E:G Documents
MT47H128M4CF-25E:G Documents
Download datasheets and manufacturer documentation for MT47H128M4CF-25E:G
MT47H128M4CF-25E:G Comparison
MT47H128M4CF-25E:G Comparison
The parts on the right have similar specifications to Micron Technology Inc. & MT47H128M4CF-25E:G.
Mfr. Part #
Manufacturer
Moisture Sensitivity Level (MSL)
Packaging
Package / Case
Memory Size
Memory Format
Operating Temperature
Voltage - Supply
Mounting Type
Availability
Price
Quantity
MT47H128M4CF-25E:G
Micron Technology Inc.
3 (168 Hours)
Tray
60-TFBGA
512Mb 128M x 4
DRAM
0°C~85°C TC
1.8V
Surface Mount
-
-
- -
MT47H128M4CB-3:B
Micron Technology Inc.
3 (168 Hours)
Tray
60-TFBGA
512Mb 128M x 4
DRAM
0°C~85°C TC
1.8V
Surface Mount
-
-
- -
- MT47H128M4CF-25E:GvsMT47H128M4CB-3:BvsMT47H128M4CB-37E:B
MT47H128M4CB-37E:B
Micron Technology Inc.
3 (168 Hours)
Tray
60-TFBGA
512Mb 128M x 4
DRAM
0°C~85°C TC
1.8V
Surface Mount
-
-
- -
- MT47H128M4CF-25E:GvsMT47H128M4CB-37E:BvsMT47H128M4CB-3:B
MT47H128M4CB-5E:B
Micron Technology Inc.
3 (168 Hours)
Tray
60-TFBGA
512Mb 128M x 4
DRAM
0°C~85°C TC
1.8V
Surface Mount
-
-
- -
- MT47H128M4CF-25E:GvsMT47H128M4CB-5E:BvsMT47H128M4CB-3:B
MT47H128M4CF-187E:G
Micron Technology Inc.
3 (168 Hours)
Tray
60-TFBGA
512Mb 128M x 4
DRAM
0°C~85°C TC
1.8V
Surface Mount
10
$18.86034
- MT47H128M4CF-25E:GvsMT47H128M4CF-187E:GvsMT47H128M4CB-3:B
