Micron Technology Inc. MT47H128M8SH-25E:M Memory ICsTray DRAM
MT47H128M8SH-25E:M
Number of Pins: 60Pins, Memory Format: DRAM, Terminal Position: BOTTOM
RoHS Compliant
Datasheet 1616-535-MT47H128M8SH-25E:M
60-TFBGA
Download the free Library Loader to convert this file for your ECAD Tool.
5000In Stock
Min.: 1 Mult.: 1
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $121.2791 | $121.28 |
| 10+ | $114.4142 | $1144.14 |
| 100+ | $107.9379 | $10793.79 |
| 500+ | $101.8282 | $50914.1 |
| 1000+ | $96.0644 | $96064.4 |
Unit Price:$121.2791
Subtotal: $121.28
MT47H128M8SH-25E:M Tech Specifications
MT47H128M8SH-25E:M Tech Specifications
Micron Technology Inc. MT47H128M8SH-25E:M technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT47H128M8SH-25E:M.
| Product Attribute | Attribute Value | |
|---|---|---|
| Factory Lead Time | 13 Weeks | |
| Contact Plating | Copper, Silver, Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 60-TFBGA | |
| Number of Pins | 60Pins | |
| Memory Types | Volatile | |
| Usage Level | Commercial grade | |
| Operating Temperature | 0°C~85°C TC | |
| Packaging | Tray | |
| Published | 2014 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Number of Terminations | 60Terminations | |
| ECCN Code | EAR99 |
| Product Attribute | Attribute Value | |
|---|---|---|
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Additional Feature | AUTO/SELF REFRESH | |
| HTS Code | 8542.32.00.32 | |
| Voltage - Supply | 1.8V | |
| Terminal Position | BOTTOM | |
| Peak Reflow Temperature (Cel) | 260 | |
| Number of Functions | 1Function | |
| Terminal Pitch | 0.8mm | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Base Part Number | MT47H128M8 | |
| Memory Size | 1Gb 128M x 8 | |
| Number of Ports | 1Port | |
| Access Time | 400ps | |
| Memory Format | DRAM | |
| Memory Interface | Parallel | |
| Data Bus Width | 8b | |
| Organization | 128MX8 |
| Product Attribute | Attribute Value | |
|---|---|---|
| Output Characteristics | 3-STATE | |
| Memory Width | 8 | |
| Write Cycle Time - Word, Page | 15ns | |
| Address Bus Width | 14b | |
| Density | 1 Gb | |
| Max Frequency | 400MHz | |
| I/O Type | COMMON | |
| Voltage - Supply (Max) | 1.9V | |
| Voltage - Supply (Min) | 1.7V | |
| Refresh Cycles | 8192 | |
| Sequential Burst Length | 48 | |
| Interleaved Burst Length | 48 | |
| Length | 10mm | |
| Height Seated (Max) | 1.2mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |
MT47H128M8SH-25E:M Documents
MT47H128M8SH-25E:M Documents
Download datasheets and manufacturer documentation for MT47H128M8SH-25E:M
Datasheets
MT47Hxx(x)M4/8/16
MT47H128M8SH-25E:M Comparison
MT47H128M8SH-25E:M Comparison
The parts on the right have similar specifications to Micron Technology Inc. & MT47H128M8SH-25E:M.
Mfr. Part #
Manufacturer
Moisture Sensitivity Level (MSL)
Packaging
Package / Case
Memory Size
Memory Format
Operating Temperature
Voltage - Supply
Mounting Type
Availability
Price
Quantity
MT47H128M8SH-25E:M
Micron Technology Inc.
3 (168 Hours)
Tray
60-TFBGA
1Gb 128M x 8
DRAM
0°C~85°C TC
1.8V
Surface Mount
5000
$18.191865
AS4C128M8D2-25BCN
Alliance Memory, Inc.
3 (168 Hours)
Tray
60-TFBGA
1Gb 128M x 8
DRAM
0°C~85°C TC
1.8V
Surface Mount
-
-
- -
- MT47H128M8SH-25E:MvsAS4C128M8D2-25BCNvsIS43DR81280C-25DBL
IS43DR81280C-25DBL
ISSI, Integrated Silicon Solution Inc
3 (168 Hours)
Tray
60-TFBGA
1Gb 128M x 8
DRAM
0°C~85°C TC
1.8V
Surface Mount
8915
$7.158885
- MT47H128M8SH-25E:MvsIS43DR81280C-25DBLvsAS4C128M8D2-25BCN
IS43DR81280C-3DBL
ISSI, Integrated Silicon Solution Inc
3 (168 Hours)
Tray
60-TFBGA
1Gb 128M x 8
DRAM
0°C~85°C TC
1.8V
Surface Mount
1150
$7.784685
- MT47H128M8SH-25E:MvsIS43DR81280C-3DBLvsAS4C128M8D2-25BCN
MT47H128M8CF-3:H
Micron Technology Inc.
3 (168 Hours)
Tray
60-TFBGA
1Gb 128M x 8
DRAM
0°C~85°C TC
1.8V
Surface Mount
16000
-
- -
- MT47H128M8SH-25E:MvsMT47H128M8CF-3:HvsAS4C128M8D2-25BCN
