ON Semiconductor 4N35M
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4N35M
1807-573-4N35M
6-DIP (0.300, 7.62mm)
FAIRCHILD SEMICONDUCTOR 4N35-M Transistor Output Optocoupler, 1, 7.5 kV, 100 %, 60 mA, DIP, 6
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13000In Stock
Min.: 1 Mult.: 1
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.89781 | $0.9 |
| 10+ | $0.84699 | $8.47 |
| 100+ | $0.79905 | $79.91 |
| 500+ | $0.753825 | $376.91 |
| 1000+ | $0.71115 | $711.15 |
Unit Price: $0.89781
Subtotal: $0.9
4N35M Tech Specifications
4N35M Tech Specifications
ON Semiconductor 4N35M technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 4N35M.
| Product Attribute | Attribute Value | |
|---|---|---|
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) | |
| Factory Lead Time | 6 Weeks | |
| Contact Plating | Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | 6-DIP (0.300, 7.62mm) | |
| Number of Pins | 6Pins | |
| Supplier Device Package | 6-DIP | |
| Weight | 855mg | |
| Collector-Emitter Saturation Voltage | 300mV | |
| Current Transfer Ratio-Min | 100% @ 10mA | |
| Power Dissipation (Max) | 250mW | |
| Number of Elements | 1 Element | |
| Operating Temperature | -40°C~100°C | |
| Packaging | Tube | |
| Published | 2008 |
| Product Attribute | Attribute Value | |
|---|---|---|
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 100°C | |
| Min Operating Temperature | -40°C | |
| Base Part Number | 4N35 | |
| Voltage - Isolation | 4170Vrms | |
| Output Voltage | 30V | |
| Output Type | Transistor with Base | |
| Number of Channels | 1Channel | |
| Number of Circuits | 1Circuit | |
| Power Dissipation | 250mW | |
| Voltage - Forward (Vf) (Typ) | 1.18V | |
| Input Type | DC | |
| Forward Current | 60mA | |
| Max Output Voltage | 30V | |
| Rise Time | 2μs |
| Product Attribute | Attribute Value | |
|---|---|---|
| Forward Voltage | 1.5V | |
| Collector Emitter Voltage (VCEO) | 300mV | |
| Reverse Breakdown Voltage | 6V | |
| Max Input Current | 50mA | |
| Current - DC Forward (If) (Max) | 60mA | |
| Input Current | 10mA | |
| Turn On / Turn Off Time (Typ) | 2μs, 2μs | |
| Vce Saturation (Max) | 300mV | |
| Reverse Voltage (DC) | 6V | |
| Height | 6.35mm | |
| Length | 6.35mm | |
| Width | 6.35mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
4N35M Documents
4N35M Documents
Download datasheets and manufacturer documentation for 4N35M
4N35M Comparison
4N35M Comparison
The parts on the right have similar specifications to ON Semiconductor & 4N35M.
Mfr. Part #
Manufacturer
Moisture Sensitivity Level (MSL)
Package / Case
Input Type
Output Type
Mounting Type
Voltage - Isolation
Operating Temperature
Packaging
Voltage - Forward (Vf) (Typ)
Availability
Price
Quantity
4N35M
ON Semiconductor
1 (Unlimited)
6-DIP (0.300, 7.62mm)
DC
Transistor with Base
Through Hole
4170Vrms
-40°C~100°C
Tube
1.18V
13000
$0.89781
4N25M
ON Semiconductor
1 (Unlimited)
6-DIP (0.300, 7.62mm)
DC
Transistor with Base
Through Hole
4170Vrms
-40°C~100°C
Tube
1.18V
13950
$0.83472
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CNY173M
ON Semiconductor
1 (Unlimited)
6-DIP (0.300, 7.62mm)
DC
Transistor with Base
Through Hole
4170Vrms
-40°C~100°C
Tube
1.18V
50400
$0.93591
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CNY173VM
ON Semiconductor
1 (Unlimited)
6-DIP (0.300, 7.62mm)
DC
Transistor with Base
Through Hole
4170Vrms
-40°C~100°C
Tube
1.18V
2341
$1.13385
- 4N35MvsCNY173VMvs4N25M
H11D3M
ON Semiconductor
1 (Unlimited)
6-DIP (0.300, 7.62mm)
DC
Transistor with Base
Through Hole
4170Vrms
-40°C~100°C
Tube
1.18V
8000
$1.35579
- 4N35MvsH11D3Mvs4N25M