ON Semiconductor MMBZ27VALT1G TVS Diodes1A 40V 22V
MMBZ27VALT1G
Peak Pulse Current: 1A, Clamping Voltage: 40V, Working Voltage: 22V
RoHS Compliant
Datasheet 1807-160-MMBZ27VALT1G
TO-236-3, SC-59, SOT-23-3
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90000In Stock
Min.: 1 Mult.: 1
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.15873 | $0.16 |
| 500+ | $0.116715 | $58.36 |
| 1000+ | $0.09726 | $97.26 |
| 2000+ | $0.089235 | $178.47 |
| 5000+ | $0.0834 | $417 |
| 10000+ | $0.07758 | $775.8 |
| 15000+ | $0.07503 | $1125.45 |
| 50000+ | $0.07377 | $3688.5 |
Unit Price:$0.15873
Subtotal: $0.16
MMBZ27VALT1G Tech Specifications
MMBZ27VALT1G Tech Specifications
ON Semiconductor MMBZ27VALT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBZ27VALT1G.
| Product Attribute | Attribute Value | |
|---|---|---|
| Factory Lead Time | 4 Weeks | |
| Contact Plating | Tin | |
| Surface Mount | YES | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Mounting Type | Surface Mount | |
| Number of Pins | 3Pins | |
| Diode Element Material | SILICON | |
| Breakdown Voltage / V | 25.65V | |
| Reverse Stand-off Voltage | 22V | |
| Number of Elements | 2 Elements | |
| Power Dissipation (Max) | 225mW | |
| Published | 2007 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C~150°C TJ | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations |
| Product Attribute | Attribute Value | |
|---|---|---|
| Termination | SMD/SMT | |
| ECCN Code | EAR99 | |
| Type | Zener | |
| Applications | General Purpose | |
| HTS Code | 8541.10.00.50 | |
| Power Rating | 40W | |
| Voltage - Rated DC | 27V | |
| Voltage - Supply | 22V | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Depth | 1.3mm | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | MMBZ*A | |
| Working Voltage | 22V | |
| Leakage Current | 50nA | |
| Element Configuration | Common Anode | |
| Power Dissipation | 40W | |
| Power Line Protection | No |
| Product Attribute | Attribute Value | |
|---|---|---|
| Max Reverse Leakage Current | 50nA | |
| Voltage - Clamping (Max) @ Ipp | 40V | |
| Clamping Voltage | 40V | |
| Peak Pulse Current | 1A | |
| Max Surge Current | 1A | |
| Peak Pulse Power | 40W | |
| Direction | Unidirectional | |
| Test Current | 1mA | |
| Unidirectional Channels | 2 | |
| Reverse Breakdown Voltage | 25.65V | |
| Max Breakdown Voltage | 28.35V | |
| ESD Protection | Yes | |
| Height | 940μm | |
| Width | 1.3mm | |
| Length | 2.9mm | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
MMBZ27VALT1G Documents
MMBZ27VALT1G Documents
Download datasheets and manufacturer documentation for MMBZ27VALT1G
PCN Assembly/Origin
Mold Compound 20/Sep/2019
ReachStatement
ON-Semiconductor-company-79.pdf
Datasheets
MMBZ/SZMMBZyyyALT1 Series
MMBZ27VALT1G-ON-Semiconductor-datasheet-153450.pdf
MMBZ27VALT1G-ON-Semiconductor-datasheet-8364014.pdf
MMBZ27VALT1G-ON-Semiconductor-datasheet-78758892.pdf
MMBZ27VALT1G-ON-Semiconductor-datasheet-34436564.pdf
MMBZ27VALT1G-ON-Semiconductor-datasheet-14047653.pdf
MMBZ27VALT1G-ON-Semiconductor-datasheet-7627526.pdf
MMBZ27VALT1G Documents
Environmental Information
Material Declaration MMBZ27VALT1G
MMBZ27VALT1G Comparison
MMBZ27VALT1G Comparison
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Packaging
Package / Case
Power Line Protection
Mounting Type
Type
Applications
Moisture Sensitivity Level (MSL)
Operating Temperature
Availability
Price
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