1N5711 Schottky Diode: Pinout, Specifications and Datasheet

1N5711 is a Metal to silicon junction diode, featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. Matched batches are available on request. Package/Case: DO-35; Forward Current: 15mA; Forward Voltage: 0.41V; Leaded Process Compatible: Yes; Length/Height, External: 4.32mm; Mounting Type: Through Hole.

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Footprint

·Guardring for over-voltage protection and high reliability

·Picosecond switching speed

·Very low turn-on voltage

·High breakdown voltage up to 70V

·Matched characteristics on request

STMicroelectronics 1N5711 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 1N5711.

mechanical data

·UHF/VHF detection

·Pulse applications with broad dynamic range

·Protection of MOS devices

·Steering, biasing and coupling in fast switching and low logic level

diagram of 1N5711 dimensions

package

tape dimensions and product orientation

STMicroelectronics(ST) is a global semiconductor leader delivering intelligent and energy-efficient products and solutions that power the electronics at the heart of everyday life. Also, ST is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. ST’s products are found everywhere today, and together with our customers, we are enabling smarter driving and smarter factories, cities and homes, along with the next generation of mobile and Internet of Things devices. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

Download datasheets and manufacturer documentation for STMicroelectronics 1N5711.