● Max. Clock 10 MHz
● Low-Power CMOS Technology:
◆ Max. write current: 5 mA at 5.5V
◆ Read current: 5 mA at 5.5V, 10 MHz
◆ Standby current: 5 uA at 5.5V
● 2048 x 8-bit Organization
● 16-Byte Page (‘C’ version devices)
● 32-Byte Page (‘D’ version devices)
● Self-Timed Erase and Write Cycles (5 ms max.)
● Block Write Protection:
◆ Protect none, 1/4, 1/2 or all of array
● Built-In Write Protection:
◆ Power-on/off data protection circuitry
◆ Write enable latch
◆ Write-protect pin
● Sequential Read
● High Reliability:
◆ Endurance: > 1M erase/write cycles
◆ Data retention: > 200 years
◆ ESD protection: > 4000V
● Temperature Ranges Supported:
◆ Industrial (I): -40 ℃ to +85 ℃
◆ Automotive (E): -40 °C to +125 °C
● Pb-Free and RoHS Compliant