Transistors - Bipolar (BJT) - Single Bipolar Transistors - BJT NPN General Purpose The 2N1711 is silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case.
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Nov 9, 2021
Tess Morley
EQD Dirt Transmitter/Fuzz Face Hybrid 2N1711 Transistors
Transistors - Bipolar (BJT) - Single Bipolar Transistors - BJT NPN General Purpose
The 2N1711 is silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intended for use in high-performance amplifiers, oscillators, and switching circuits. This article is going to introduce the 2N1711 transistor.
2N1711
The 2N1711 is a metal case NPN transistor with a TO-39 package. The transistor's main functions include switching, amplification, and oscillator. It can deliver 500mA of collector current when used as a switch. The transistor's peak collector current can reach 1A. The greatest collector current a transistor can drive in a microsecond and millisecond pulses are determined by the peak collector current value.
STMicroelectronics 2N1711 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N1711.
| Product Attribute | Attribute Value | |
|---|---|---|
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-205AD, TO-39-3 Metal Can | |
| Number of Pins | 3Pins | |
| Weight | 4.535924g | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Collector-Emitter Saturation Voltage | 500mV | |
| Number of Elements | 1 Element | |
| hFEMin | 40 | |
| Operating Temperature | 175°C TJ | |
| Packaging | Tube | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Product Attribute | Attribute Value | |
|---|---|---|
| Number of Terminations | 3Terminations | |
| Terminal Finish | Matte Tin (Sn) | |
| Voltage - Rated DC | 75V | |
| Max Power Dissipation | 800mW | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Current Rating | 500mA | |
| Frequency | 100MHz | |
| Base Part Number | 2N17 | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Power Dissipation | 800mW | |
| Transistor Application | SWITCHING | |
| Gain Bandwidth Product | 100MHz | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN |
| Product Attribute | Attribute Value | |
|---|---|---|
| Collector Emitter Voltage (VCEO) | 50V | |
| Max Collector Current | 500mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 100mA 10V | |
| Current - Collector Cutoff (Max) | 10nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 15mA, 150mA | |
| Transition Frequency | 100MHz | |
| Collector Base Voltage (VCBO) | 75V | |
| Emitter Base Voltage (VEBO) | 7V | |
| Height | 6.6mm | |
| Length | 9.4mm | |
| Width | 9.4mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Package Type: TO-39
Transistor Type: NPN
Max Collector Current(IC): 500mA
Max Collector-Emitter Voltage (VCE): 50V
Max Collector-Base Voltage (VCB): 75V
Max Emitter-Base Voltage (VBE): 7V
Max Collector Dissipation (Pc): 800 Milliwatt
Max Transition Frequency (fT): 100 MHz
Minimum & Maximum DC Current Gain (hFE): 100 to 300
Max Storage, Operating & Junction temperature range: -65 to 200 Centigrade
High breakdown voltage,
Low leakage current,
Low capacity
Beta useful over an extremely wide current range
Switching applications
Audio Amplification Circuits
Audio Pre amplification Circuits
RF applications
Any signal amplification
2N4032, 2N1711A, 2N3107, 2N3019
The 2N1711 transistor is suitable for a wide range of applications. As previously stated, it can be used as a switch and can drive loads up to 500mA. It may also be used as an amplifier, allowing it to amplify a wide range of signals. It can also be employed in radio frequency applications with a frequency range of fewer than 100 MHz.
2N1711 Circuit
The common base, common emitter, and common collector configurations are the three main configurations for this NPN transistor.
Because it has the requisite voltage and power gain for amplification, the common-emitter arrangement is extensively utilized for amplification.
The input signal can be increased by 20dB, which is roughly 100 times more than the input signal.
The collector voltage is higher than the base voltage, which is vital to remember.
On the emitter side, the current is a mixture of base and collector currents.
The size and doping concentration of emitter and collector are the primary differences. The collector has a low doping level, but the emitter has a high doping level.
The base currency in this transistor is always the smallest, whereas the emitter current is always the biggest.
The forward current gain of the transistor is represented by beta β. It is an amplification factor, the value at which the current is being amplified. It is the ratio between collector current the base current. As it is a ratio between two currents so it features no unit.
2N1711 Dimensions
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology, and its products play a key role in enabling today's convergence trends.
Download datasheets and manufacturer documentation for STMicroelectronics 2N1711.
Download datasheets and manufacturer documentation for 2N1711
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