Bipolar Transistors - BJT NPN General Purpose The 2N2222 is a silicon planar epitaxial NPN transistors. It is made of silicon material and specially designed for low voltage
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Jul 4, 2021
Cecilia Bacon
NPN 2N2222 transistor component as switch circuit with schematic tutorial.
Bipolar Transistors - BJT NPN General Purpose
The 2N2222 is a silicon planar epitaxial NPN transistors. It is made of silicon material and specially designed for low voltage, low to medium current and low power amplifier applications. This blog mainly covers its pinout, datasheet, specifications and other information about 2N2222.
2N2222
2N2222 is a silicon planar epitaxial NPN transistors in Jedec TO-18 metal cases. It is designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages.
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STMicroelectronics 2N2222 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N2222.
STMicroelectronics 2N2222 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N2222.
| Product Attribute | Attribute Value | |
|---|---|---|
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-206AA, TO-18-3 Metal Can | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 30V | |
| Current-Collector (Ic) (Max) | 600mA | |
| Number of Elements | 1 Element | |
| hFEMin | 35 | |
| Operating Temperature | 175°C TJ | |
| Packaging | Tube | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations |
| Product Attribute | Attribute Value | |
|---|---|---|
| ECCN Code | EAR99 | |
| Type | Switch | |
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | LOW LEAKAGE CURRENT | |
| Voltage - Rated DC | 30V | |
| Max Power Dissipation | 500mW | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Current Rating | 800mA | |
| Frequency | 250MHz | |
| Base Part Number | 2N22 | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Power Dissipation | 500mW | |
| Gain Bandwidth Product | 250MHz | |
| Transistor Type | NPN |
| Product Attribute | Attribute Value | |
|---|---|---|
| Collector Emitter Voltage (VCEO) | 30V | |
| Max Collector Current | 800mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 10V | |
| Current - Collector Cutoff (Max) | 10nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA | |
| Transition Frequency | 300MHz | |
| Collector Base Voltage (VCBO) | 60V | |
| Emitter Base Voltage (VEBO) | 5V | |
| VCEsat-Max | 1 V | |
| Turn Off Time-Max (toff) | 285ns | |
| Collector-Base Capacitance-Max | 8pF | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Collector to emitter voltage is VCEO = 50V when the base is open
Emitter to base voltage is VEBO= 6V when the collector is open
Collector to base voltage is VCBO= 75 when the emitter is open
Dc continuous collector current is IC = 800mA
Total device power dissipation is PT = 1W
Maximum thermal resistance from junction to a case is R0JC= 150C0/W
Maximum thermal resistance from junction to ambient is R0JA= 325C0/W
Input capacitance = 25pF
Output capacitance = 8pF
Turn-on time = 25ns
Fall time = 60ns
This 2N2222 NPN Transistor could be used in that loads where current is required more than 800mA
Motor drive circuits such as variable frequency drives (VFD) etc.
Dc inverters and rectifier circuits.
Darlington pair transistors where more than one transistors are connected in parallel for obtaining the high current from emitter to collector.
It could be used as an amplifier for amplifying current, voltage, and power.
2N2222 could be used in that application such as switching and amplifications. In switching application it works in two regions such as saturation and cut off region. In saturation region full current flows from emitter to a collector that’s range is 110 to 800mA and in this condition, it acts as a turn on a switch. Therefore the user cannot connect the load whose current is greater than 800mA.
Similarly in the cut-off region, no current flows from emitter to collector then it acts as a turn off the switch. A current limiting resistor is also in the circuit for limiting the base current because it could be damaged the transistor if the source current is greater than 5mA.
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
Download datasheets and manufacturer documentation for STMicroelectronics 2N2222.
Download datasheets and manufacturer documentation for 2N2222
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