
STMICROELECTRONICS - 2N2905A - TRANSISTOR, PNP, TO-39
The 2N2905A is a silicon Planar Epitaxial PNP transistor in Jedec TO-39 metal case.
STMICROELECTRONICS - 2N2905A - TRANSISTOR, PNP, TO-39 The 2N2905A is a silicon Planar Epitaxial PNP transistor in Jedec TO-39 metal case.
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Jul 25, 2021
Elmer Conrad

STMICROELECTRONICS - 2N2905A - TRANSISTOR, PNP, TO-39
The 2N2905A is a silicon Planar Epitaxial PNP transistor in Jedec TO-39 metal case.
The 2N2905A is a silicon Planar Epitaxial PNP transistor in Jedec TO-39 metal case. The 2N2905A is designed for high speed saturated switching and general purpose applications.

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Footprint

3D Model

Type: PNP
Package: TO-39
Collector-Emitter Voltage: -60 V
Collector-Base Voltage: -60 V
Emitter-Base Voltage: -5 V
Collector Current: -0.6 A
Collector Dissipation: 0.8 W
DC Current Gain (hfe): 100 to 300
Transition Frequency: 200 MHz
Operating and Storage Junction Temperature Range: -65 to +200 °C
STMicroelectronics 2N2905A technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N2905A.
STMicroelectronics 2N2905A technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N2905A.
| Product Attribute | Attribute Value | |
|---|---|---|
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-205AD, TO-39-3 Metal Can | |
| Number of Pins | 3Pins | |
| Weight | 4.535924g | |
| Transistor Element Material | SILICON | |
| Manufacturer Package Identifier | TO39-P008B | |
| Collector-Emitter Breakdown Voltage | -60V | |
| Collector-Emitter Saturation Voltage | -1.6V | |
| Current-Collector (Ic) (Max) | 600mA | |
| Number of Elements | 1 Element | |
| hFEMin | 50 | |
| Operating Temperature | 175°C TJ | |
| Packaging | Tube | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations |
| Product Attribute | Attribute Value | |
|---|---|---|
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Voltage - Rated DC | -60V | |
| Max Power Dissipation | 600mW | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Current Rating | -600mA | |
| Frequency | 200MHz | |
| Base Part Number | 2N29 | |
| Pin Count | 3 | |
| Reference Standard | CECC | |
| Element Configuration | Single | |
| Power Dissipation | 600mW | |
| Transistor Application | SWITCHING | |
| Gain Bandwidth Product | 200MHz | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | -60V | |
| Max Collector Current | -600mA |
| Product Attribute | Attribute Value | |
|---|---|---|
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 10V | |
| Current - Collector Cutoff (Max) | 10nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA | |
| Voltage - Collector Emitter Breakdown (Max) | 60V | |
| Transition Frequency | 200MHz | |
| Collector Base Voltage (VCBO) | -60V | |
| Emitter Base Voltage (VEBO) | -5V | |
| Max Junction Temperature (Tj) | 175°C | |
| Turn On Time-Max (ton) | 45ns | |
| Collector-Base Capacitance-Max | 8pF | |
| Diameter | 9.4mm | |
| Height | 6.6mm | |
| Length | 9.4mm | |
| Width | 9.4mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |

Test Circuit for ton, tr, td

Test Circuit for toff, to, tf
General purpose transistor for high speed switching and linear applications
Military and other high-reliability applications

2N2905A Package Outline

2N2905A Mechanical Data
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Download datasheets and manufacturer documentation for STMicroelectronics 2N2905A.
Download datasheets and manufacturer documentation for 2N2905A
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