2N2907 Bipolar PNP Transistor: Pinout, Datasheet and Equivalent

The 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-18 (for 2N2907) metal case. They are designed for high-speed saturated switching and general-purpose application.

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• Having a high value of current (max. 600 mA)

• Low voltage value (max. 40 V)

• Comes in different type of packages – TO-92, TO-18

• These are Lead (Pb) free devices

• Collector to Emitter voltage (VCEO) is 40v (max.)

• Collector to Base voltage (VCBO) is 60v (max.)

• Emitter to Base voltage(VEBO) is 5v (normally)

• Maximum value of Collector current is 600mA

• Power dissipation at ambient temperature is about 400mW

• Having DC current gain (hfe) of 100 to 300 (max.)

• Temperature of operation and storage is -65 to +150 °C

STMicroelectronics 2N2907 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N2907.

2N2907 transistor as Switch

When used as a switch, can be operated in the saturation region and cut-off region. In the PNP transistor, by default, it’s in ON state, but not to be said perfectly until the base pin is not grounded. If we provide ground to the base pin then the transistor will be in reverse biased and said to be turned ON. If supply is provided to the base pin it stops conducting current between emitter and collector and said to be in an OFF state. For the protection of the transistor, a resistance added in series with it. For finding the value of that resistor you can use the formula:

RB = VBE / IB

Where the value of VBE will be 5v for this transistor. The maximum value of providing base current is 200mA. So, from that, you can find the value of resistance to be added in series with it.

2N2907 transistor as Amplifier

When used as an amplifier, can be operated in the active region. When its base is connected to the ground it will allow a high current (600mA) to pass through the collector to the emitter, that’s how it amplifies the current. There is three configurations used in an amplifier circuit are common emitter, common base, common collector. This transistor is used where low power amplification is needed. It can also amplify the power and current. Amplification factor usually determined in term of power, for calculating the current gain we use the formula:

Gain (hfe) = IC / IB

Where IC is the collector current and IB is the base current of the circuit.

• Where amplification of low power is needed we use this transistor.

• It can also be used in various switching applications.

• Used for making siren or dual Led or Lamp flasher.

• Can be used in Darlington Pair.

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