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HomeCommunitySubject2N2907A Small Signal PNP Transistors: Pinout, Datasheet pdf and Equivalent [Video]

2N2907A Small Signal PNP Transistors: Pinout, Datasheet pdf and Equivalent [Video]

Transistors - Bipolar (BJT) - Single STMICROELECTRONICS 2N2907A Bipolar (BJT) Single Transistor, PNP, -60 V, 200 MHz, 400 mW, -600 mA, 300 hFE The 2N2907A is a silicon Planar Epitaxial PNP transistor.

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Nov 10, 2021

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Step by step build of 2N2907 pnp transistor zener diode regulated 5V circuit waste little current

 

Transistors - Bipolar (BJT) - Single STMICROELECTRONICS 2N2907A Bipolar (BJT) Single Transistor, PNP, -60 V, 200 MHz, 400 mW, -600 mA, 300 hFE

The 2N2907A is a silicon Planar Epitaxial PNP transistor. This article is going to explain datasheet pdf, pinout, equivalents, specifications, and other details about the 2N2907A transistor.

2N2907A

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What is 2N2907A?

2N2907A is a metal can PNP bipolar junction transistor available in the TO-18 package. There are two types of 2N2907 transistors one is manufactured in the TO-92 package and the other is manufactured in the TO-18 metal can package. However, there are two variations of each packaging: the metal can package comes in two slightly different versions, 2N2907 and 2N2907A.  while the plastic package comes in two slightly different versions, 2N2907 and 2N2907A.

2N2907A Pinout

2N2907A Pinout

 

Pin No. Pin Name Description
1 Emitter Current Drains out   through emitter
2 Base Controls the biasing   of transistor
3 Collector Current flows in   through collector

2N2907A CAD Model

2N2907A Symbol

 

2N2907A Footprint

Specifications

STMicroelectronics 2N2907A technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N2907A.

2N2907A Tech Specifications

STMicroelectronics 2N2907A technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N2907A.

Product Attribute Attribute Value
MountThrough Hole
Mounting TypeThrough Hole
Package / CaseTO-206AA, TO-18-3 Metal Can
Number of Pins3Pins
Weight4.535924g
Transistor Element MaterialSILICON
Collector-Emitter Breakdown Voltage60V
Collector-Emitter Saturation Voltage-1.6V
Number of Elements1 Element
hFEMin50
Operating Temperature175°C TJ
PackagingBulk
JESD-609 Codee3
Pbfree Codeyes
Part StatusObsolete
Moisture Sensitivity Level (MSL)1 (Unlimited)
Number of Terminations3Terminations
ECCN CodeEAR99
Product Attribute Attribute Value
Terminal FinishMatte Tin (Sn)
Voltage - Rated DC-60V
Max Power Dissipation400mW
Terminal PositionBOTTOM
Terminal FormWIRE
Current Rating-600mA
Frequency200MHz
Base Part Number2N29
Pin Count3
Reference StandardCECC
Voltage60V
Element ConfigurationSingle
Power Dissipation400mW
Transistor ApplicationSWITCHING
Gain Bandwidth Product200MHz
Polarity/Channel TypePNP
Transistor TypePNP
Collector Emitter Voltage (VCEO)60V
Product Attribute Attribute Value
Max Collector Current600mA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
Current - Collector Cutoff (Max)10nA ICBO
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Transition Frequency200MHz
Collector Base Voltage (VCBO)60V
Emitter Base Voltage (VEBO)5V
Turn On Time-Max (ton)45ns
Collector-Base Capacitance-Max8pF
Diameter5.8mm
Height5.3mm
Length5.8mm
Width5.8mm
REACH SVHCNo SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead FreeLead Free
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2N2907A Features

  • Hermetically sealed TO-18 metal can

  • Also available in chip configuration

  • Max Collector Current(IC): 600mA

  • Max Collector-Emitter Voltage (VCE): -60V

  • Max Collector-Base Voltage (VCB): -60V

  • Max Emitter-Base Voltage (VBE): -5V

  • Max Collector Dissipation (Pc): 400 Milliwatt

  • Max Transition Frequency (fT): 200 MHz

  • Minimum & Maximum DC Current Gain  (hFE): 100 to 300

  • Max Storage & Operating temperature  should be: -65 to 200 Centigrade

2N2907A Applications

  • DC/DC Converters

  • Microwave

  • Audio Amplification

  • Audio Preamplification

  • Any signal amplification

  • Switching applications

  • RF applications

 

2N2907A Equivalents

2N2222A, KSP2907A, KTN2907A, MPS2907A

2N2907A Dimensions

2N2907A dimensions.jpg

2N2907A Dimensions

2N2907A Manufacturer

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology, and its products play a key role in enabling today's convergence trends.

Datasheet PDF

2N2907A Documents

Download datasheets and manufacturer documentation for 2N2907A

Frequently Asked Questions

What is the use of 2N2907A?
The 2N2907A is a commonly available PNP bipolar junction transistor used for general-purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds.
How does 2N2907A work?
When this transistor is used as an amplifier, it operates in an active region. When the base terminal of the 2N2907A PNP transistor is connected to the GND pin, then the maximum current of 600mA is allowed to pass through the collector to the emitter terminal. In this way, the current is amplified by this transistor.
FAQ
What is the use of 2N2907A?
The 2N2907A is a commonly available PNP bipolar junction transistor used for general-purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds.
How does 2N2907A work?
When this transistor is used as an amplifier, it operates in an active region. When the base terminal of the 2N2907A PNP transistor is connected to the GND pin, then the maximum current of 600mA is allowed to pass through the collector to the emitter terminal. In this way, the current is amplified by this transistor.

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