Transistors - Bipolar (BJT) - Single TRANS NPN 250V 1A TO-39 The 2N3440 is a silicon epitaxial planar NPN transistor in jedec TO-39 metal case designed for use in consumer
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Oct 15, 2021
Olive Walter
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Transistors - Bipolar (BJT) - Single TRANS NPN 250V 1A TO-39
The 2N3440 is a silicon epitaxial planar NPN transistor in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. There is a huge range of Semiconductors, Capacitors, Resistors and ICs in stock. Welcome RFQ.
2N3440
2N3440 Symbol
2N3440 Footprint
The 2N3440 is a silicon epitaxial planar NPN transistor in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators.
STMicroelectronics 2N3440 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N3440.
STMicroelectronics 2N3440 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N3440.
| Product Attribute | Attribute Value | |
|---|---|---|
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-205AD, TO-39-3 Metal Can | |
| Number of Pins | 3Pins | |
| Weight | 4.535924g | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 250V | |
| Collector-Emitter Saturation Voltage | 500mV | |
| Number of Elements | 1 Element | |
| hFEMin | 40 | |
| Operating Temperature | 200°C TJ | |
| Packaging | Tube | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 |
| Product Attribute | Attribute Value | |
|---|---|---|
| Terminal Finish | Matte Tin (Sn) | |
| Voltage - Rated DC | 300V | |
| Max Power Dissipation | 10W | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Current Rating | 1A | |
| Frequency | 15MHz | |
| Base Part Number | 2N34 | |
| Pin Count | 3 | |
| Voltage | 250V | |
| Element Configuration | Single | |
| Current | 1A | |
| Power Dissipation | 10W | |
| Case Connection | COLLECTOR | |
| Power - Max | 1W | |
| Transistor Application | SWITCHING | |
| Gain Bandwidth Product | 15MHz | |
| Polarity/Channel Type | NPN |
| Product Attribute | Attribute Value | |
|---|---|---|
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 250V | |
| Max Collector Current | 1A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA 10V | |
| Current - Collector Cutoff (Max) | 50μA | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA | |
| Transition Frequency | 15MHz | |
| Collector Base Voltage (VCBO) | 450V | |
| Emitter Base Voltage (VEBO) | 7V | |
| VCEsat-Max | 0.5 V | |
| Diameter | 9.4mm | |
| Height | 6.6mm | |
| Length | 9.4mm | |
| Width | 9.4mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
• Metal TO-39 can package
• Advanced process technology
• Low error voltage
• Fast switching speed
• Full-voltage operation
• High power and current handling capability
General-purpose transistors for medium power applications requiring high-frequency switching and low package profile.
Military and other high-reliability applications.
The equivalent for 2N3440:
2N3439
NTE396
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
ICBO |
Collector Cut-off |
for 2N3439 VCB = 360 V |
20 |
mA |
||
|
Current (IE = 0) |
for 2N3440 VCB = 250 V |
20 |
mA |
|||
|
ICEO |
Collector Cut-off |
for 2N3439 VCE = 300 V |
20 |
mA |
||
|
Current (IB = 0) |
for 2N3440 VCE = 200 V |
50 |
mA |
|||
|
ICEX |
Collector Cut-off Current (VBE = -1.5V) |
for 2N3439 VCE = 450 V for 2N3440 VCE = 300 V |
500 500 |
mA mA |
||
|
IEBO |
Emitter Cut-off Current (IC = 0) |
VEB = 6 V |
20 |
mA |
||
|
VCEO(sus)* |
Collector-Emitter |
IC = 50 mA |
||||
|
Sustaining Voltage |
for 2N3439 |
350 |
V |
|||
|
for 2N3440 |
250 |
V |
||||
|
VCE(sat)* |
Collector-Emitter Saturation Voltage |
IC = 50 mA IB = 4 mA |
0.5 |
V |
||
|
VBE(sat)* |
Base-Emitter Saturation Voltage |
IC = 50 mA IB = 4 mA |
1.3 |
V |
||
|
hFE* |
DC Current Gain |
IC = 20 mA VCE = 10 V |
40 |
160 |
||
|
IC = 2 mA VCE = 10 V for 2N3439 |
30 |
|||||
|
hFE |
Small Signal Current Gain |
IC = 5 mA VCE = 10 V f = 1KHz |
25 |
|||
|
fT |
Transition frequency |
IC = 5 mA VCE = 10 V f = 5MHz |
15 |
MHz |
|
DIM. |
mm |
inch |
||||
|
MIN. |
TYP. |
MAX. |
MIN. |
TYP. |
MAX. |
|
|
A |
12.7 |
0.500 |
||||
|
B |
0.49 |
0.019 |
||||
|
D |
6.6 |
0.260 |
||||
|
E |
8.5 |
0.334 |
||||
|
F |
9.4 |
0.370 |
||||
|
G |
5.08 |
0.200 |
||||
|
H |
1.2 |
0.047 |
||||
|
I |
0.9 |
0.035 |
||||
Download datasheets and manufacturer documentation for 2N3440
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