This NPN transistor is a bipolar current-controlled device, as opposed to a unipolar voltage-controlled device like a JFET.
The collector voltage exceeds the base voltage, which is positive in relation to the emitter.
The total of the base and collector currents is the emitter current.
This NPN transistor can be used with three configurations i.e common emitter configuration, common base configuration, and common collector configuration.
Because it has the requisite voltage and power gain for the amplification process, the common-emitter arrangement is primarily employed for amplification. The circuit diagram for 2N3773 is shown below.

2N3773 Circuit Diagram
The size and doping concentration of the collector and emitter terminals varies. The emitter has a high doping level, while the collector has a low doping level.
The forward current gain of a transistor is an essential aspect in determining its features. It's an amplification factor, which means it's a measure of how much current is amplified. It's called Beta, and it's a ratio between collector current and base current that's denoted by. The beta value ranges from 20 to 1000, with 200 being the most common. It has no unit because it is a ratio of two currents.
Another key aspect is current gain, which is indicated by and represents a ratio between collector and emitter current. The alpha value varies from 0.95 to 0.99. The majority of the time, its values are regarded as one.