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2N5087 PNP Transistor: Pinout, Datasheet, and Uses

Bipolar Transistors - BJT PNP Gen Pur SS The 2N5087 is a molded epoxy silicon PNP signal transistor designed for low-level, low-noise amplifier applications.

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Aug 15, 2021

Merle Marlowe

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DIY Silicon Fuzz Factory

 

Bipolar Transistors - BJT PNP Gen Pur SS

The 2N5087 is a molded epoxy silicon PNP signal transistor designed for low-level, low-noise amplifier applications.

2N5087

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2N5087 Description

The 2N5087 is a molded epoxy silicon PNP signal transistor designed for low-level, low-noise amplifier applications. The 2N5087 features high gain and low noise -- the max noise figure of the 2N5087 is only 2.0dB, and the max DC current gain is up to 800, which ensures that the 2N5087 is capable of amplifying very low gain signals to high gain with noise reductions. The 2N5087 is also ideal to use in audio preamplifier and amplifier circuits and can be used in audio circuits where the input signal is quite low.

 

2N5087 Pinout

2N5087 CAD Model

Symbol

 

Footprint

 

3D Model

2N5087 Features

  • Package Type: TO-92

  • Transistor Type: PNP

  • Max Collector Current(IC): 50 mA

  • Max Collector-Emitter Voltage (VCEO): 50 V

  • Max Collector-Base Voltage (VCBO): 50 V

  • Max Emitter-Base Voltage (VEBO): 3 V

  • Max Power Dissipation (PD): 625 mW

  • Max Transition Frequency (fT): 40 MHz

  • DC Current Gain (hFE): 250 - 800

  • Storage & Operating temperature: -65 to +150 Centigrade

Specifications

Central Semiconductor 2N5087 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor 2N5087.

2N5087 Tech Specifications

Central Semiconductor 2N5087 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor 2N5087.

Product Attribute Attribute Value
Factory Lead Time8 Weeks
Package / CaseTO-92
MountThrough Hole
hFEMin250
Power Dissipation (Max)625mW
Number of Elements1 Element
Collector-Emitter Saturation Voltage300mV
Collector-Emitter Breakdown Voltage50V
Published2012
JESD-609 Codee0
Pbfree Codeno
Part StatusActive
Number of Terminations3Terminations
Product Attribute Attribute Value
ECCN CodeEAR99
Terminal FinishTin/Lead (Sn/Pb)
Max Operating Temperature150°C
Min Operating Temperature-65°C
Additional FeatureLOW NOISE
HTS Code8541.21.00.95
Terminal PositionBOTTOM
Peak Reflow Temperature (Cel)NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Pin Count3
JESD-30 CodeO-PBCY-T3
Qualification StatusNot Qualified
PolarityPNP
Product Attribute Attribute Value
Element ConfigurationSingle
Transistor ApplicationAMPLIFIER
Gain Bandwidth Product40MHz
Collector Emitter Voltage (VCEO)300mV
Max Collector Current50mA
Transition Frequency40MHz
Frequency - Transition40MHz
Collector Base Voltage (VCBO)50V
Emitter Base Voltage (VEBO)3V
DC Current Gain-Min (hFE)250
Continuous Collector Current50mA
RoHS StatusRoHS Compliant
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Where to use 2N5087

The 2N5087 is a general-purpose PNP amplifier that features low noise and high gain. These features make it ideal to use in audio amplifiers, audio preamplifiers, small-signal amplification, etc. It can be used in audio circuits where the input signal is low. Other than that the 2N5087 can also be used to switch loads under 50mA.

 

2N5087 Applications

  • Increasing audio gain

  • Sensor circuits

  • Darlington pairs

  • Mic amplifier

  • Low noise stages in audio equipment

  • Audio amplifiers and stages

  • Switching loads under 50mA

2N5087 Package

2N5087 Package Outline

 

2N5087 Mechanical Data  

2N5087 Manufacturer

Since 1974, Central Semiconductor has manufactured innovative discrete semiconductors used in electronic products worldwide. Devices currently include standard and custom small-signal transistors, bipolar power transistors, MOSFETs, diodes, rectifiers, protection devices, current limiting diodes, bridge rectifiers, thyristors, and silicon carbide devices. Central’s devices are available in industry-standard surface mount and through-hole packages, bare die, TLMs (Tiny Leadless Modules™), and MDMs (Multi Discrete Modules™). Central has earned a reputation as a manufacturer of the highest quality products consistently delivered on time, and a provider of exceptional value-added services.

Datasheet PDF

Download datasheets and manufacturer documentation for Central Semiconductor 2N5087.

2N5087 Documents

Download datasheets and manufacturer documentation for 2N5087

Frequently Asked Questions

1.What is 2N5087?
The 2N5087 is a molded epoxy silicon PNP signal transistor designed for low-level, low-noise amplifier applications. The 2N5087 features high gain and low noise -- the max noise figure of the 2N5087 is only 2.0dB, and the max DC current gain is up to 800, which ensures that the 2N5087 is capable of amplifying very low gain signals to high gain with noise reductions.
2.How to safely long run 2N5087 in a circuit?
For long-life performance in your circuits, we always suggest using every component 20% below its max ratings, the maximum collector current of the transistor is -100mA therefore do not drive a load of more than -80mA (if the max collector is -50mA then the max load you can drive is -40mA. The max load voltage should be under -40V and always store or operate the transistor in temperature above -55 degrees Celsius and below +150 degrees Celsius.
FAQ
1.What is 2N5087?
The 2N5087 is a molded epoxy silicon PNP signal transistor designed for low-level, low-noise amplifier applications. The 2N5087 features high gain and low noise -- the max noise figure of the 2N5087 is only 2.0dB, and the max DC current gain is up to 800, which ensures that the 2N5087 is capable of amplifying very low gain signals to high gain with noise reductions.
2.How to safely long run 2N5087 in a circuit?
For long-life performance in your circuits, we always suggest using every component 20% below its max ratings, the maximum collector current of the transistor is -100mA therefore do not drive a load of more than -80mA (if the max collector is -50mA then the max load you can drive is -40mA. The max load voltage should be under -40V and always store or operate the transistor in temperature above -55 degrees Celsius and below +150 degrees Celsius.

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