Transistors - Bipolar (BJT) - RF Trans GP BJT NPN 20V 0.4A 3-Pin TO-39 The 2N5109 is an RF & Microwave discrete low power transistor.
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Nov 4, 2021
Werner Hill
2N5109 Pre-amp for 9 circle RX array
Transistors - Bipolar (BJT) - RF Trans GP BJT NPN 20V 0.4A 3-Pin TO-39
The 2N5109 is an RF & Microwave discrete low power transistor. This post will unlock more details about 2N5109. There is a huge range of Semiconductors, Capacitors, Resistors and ICs in stock. Welcome RFQ!
2N5109
2N5109 Pinout
2N5109 Symbol
2N5109 Footprint
The 2N5109 is a silicon NPN transistor in a TO39 type package designed specifically for broadband applications requiring good linearity. Usable as a high-frequency current mode switch to 200mA.
Silicon NPN, To-39 packaged VHF/UHF Transistor
1.2 GHz Current-Gain Bandwidth Product @ 50mA
Maximum Unilateral Gain = 12dB (typ) @ 200 MHz
Collector-Emitter Voltage, VCEO: 20V
Collector-Base Voltage, VCBO: 40V
Emitter-Base Voltage, VEBO: 3V
Continuous Collector Current, IC: 400mA
Continuous Base Current, IB: 400mA
Total Device Dissipation (TC = +75°C, Note 1), PD: 2.5W
Derate above +25°C: 20mW/°C
Storage Temperature Range, Tstg: -65° to +200°C
The replacement for 2N5109:
2N4428
BFW16
2N5943
Microsemi Corporation 2N5109 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N5109.
Microsemi Corporation 2N5109 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N5109.
| Product Attribute | Attribute Value | |
|---|---|---|
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-205AD, TO-39-3 Metal Can | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 20V | |
| Packaging | Bulk | |
| Published | 2004 | |
| Pbfree Code | no | |
| Part Status | Obsolete |
| Product Attribute | Attribute Value | |
|---|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 200°C | |
| Min Operating Temperature | -65°C | |
| HTS Code | 8541.29.00.75 | |
| Max Power Dissipation | 2.5W | |
| Pin Count | 3 | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 20V |
| Product Attribute | Attribute Value | |
|---|---|---|
| Max Collector Current | 400mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA 15V | |
| Gain | 12dB | |
| Frequency - Transition | 1.2GHz | |
| Collector Base Voltage (VCBO) | 40V | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |
2N5109 Package
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defence, communications, data centre and industrial markets. Products include high-performance and radiation-hardened analogue mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services.
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