Transistors - Bipolar (BJT) - Single STMICROELECTRONICS 2N5416 Bipolar (BJT) Single Transistor, PNP, -300 V, 15 MHz, 10 W, -1 A, 30 hFE The 2N5416 is a PNP silicon low-power transistor.
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Nov 10, 2021
Hogan Minnie
Transistors - Bipolar (BJT) - Single STMICROELECTRONICS 2N5416 Bipolar (BJT) Single Transistor, PNP, -300 V, 15 MHz, 10 W, -1 A, 30 hFE
The 2N5416 is a PNP silicon low-power transistor. This article will unlock more details about 2N5416. There is a huge range of Semiconductors, Capacitors, Resistors and ICs in stock. Welcome RFQ.
2N5416
2N5416 Pinout
2N5416 Symbol
2N5416 Footprint
The 2N5416 is a high voltage silicon epitaxial planar PNP transistor in the Jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators.
●JEDEC registered 2N5415 through 2N5416 series
●JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/485.
●RoHS compliant
General-purpose transistors for low power applications requiring high-frequency switching.
Low package profile
Military and other high-lability applications
The alternative for 2N5416:
MP001173
2N5415
STMicroelectronics 2N5416 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N5416.
STMicroelectronics 2N5416 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N5416.
| Product Attribute | Attribute Value | |
|---|---|---|
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-205AD, TO-39-3 Metal Can | |
| Number of Pins | 3Pins | |
| Weight | 4.535924g | |
| Collector-Emitter Breakdown Voltage | 300V | |
| Collector-Emitter Saturation Voltage | -2.5V | |
| Number of Elements | 1 Element | |
| hFEMin | 30 | |
| Packaging | Tube | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) |
| Product Attribute | Attribute Value | |
|---|---|---|
| Max Operating Temperature | 200°C | |
| Min Operating Temperature | -65°C | |
| Voltage - Rated DC | -350V | |
| Max Power Dissipation | 10W | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Current Rating | -1A | |
| Frequency | 15MHz | |
| Base Part Number | 2N54 | |
| Element Configuration | Single | |
| Power Dissipation | 1W | |
| Case Connection | COLLECTOR | |
| Transistor Application | SWITCHING | |
| Gain Bandwidth Product | 15MHz | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 300V |
| Product Attribute | Attribute Value | |
|---|---|---|
| Max Collector Current | 1A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA 10V | |
| Current - Collector Cutoff (Max) | 50μA | |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 5mA, 50mA | |
| Transition Frequency | 15MHz | |
| Collector Base Voltage (VCBO) | 350V | |
| Emitter Base Voltage (VEBO) | 6V | |
| Collector-Base Capacitance-Max | 25pF | |
| Diameter | 9.4mm | |
| Height | 6.6mm | |
| Length | 9.4mm | |
| Width | 9.4mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivalled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends
Download datasheets and manufacturer documentation for 2N5416
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