STMICROELECTRONICS 2N7002 MOSFET Transistor, N Channel, 180 mA, 60 V, 1.8 ohm, 10 V, 2.1 V The 2N7002 is a logic level N-Channel MOSFET that's been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
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Jun 25, 2021
Myra Landon
iRobot Roomba 770 PCBA repair of dead left wheel, reflowing 2N7002 N-Channel MOSFET
STMICROELECTRONICS 2N7002 MOSFET Transistor, N Channel, 180 mA, 60 V, 1.8 ohm, 10 V, 2.1 V
The 2N7002 is a logic level N-Channel MOSFET that's been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
2N7002
The 2N7002 is a low-threshold, Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired.
Symbol
Footprint
3D Model
High Density Cell Design for Low RDS(ON)
Rugged and Reliable
Suitable for logic level gate drive sources
Surface-mounted package
N-Channel MOSFET with low on-state resistance
Continuous Drain Current (ID) is 200mA
Drain Source Voltage (VDS) is 60V
On-state Resistance is <5Ω
Minimum Gate threshold voltage (VGS-th) is 1V
Maximum Gate threshold voltage (VGS-th) is 3V
Turn ON and Turn off time is 15ns and 8ns each
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
High Saturation Current Capability
STMicroelectronics 2N7002 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N7002.
STMicroelectronics 2N7002 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N7002.
| Product Attribute | Attribute Value | |
|---|---|---|
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Pins | 3Pins | |
| Weight | 4.535924g | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 200mA Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 350mW Tc | |
| Turn Off Delay Time | 7 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Cut Tape (CT) | |
| Series | STripFET™ | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Product Attribute | Attribute Value | |
|---|---|---|
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW THRESHOLD | |
| Voltage - Rated DC | 60V | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 115mA | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Base Part Number | 2N70 | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 350mW | |
| Turn On Delay Time | 5 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 5 Ω @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Product Attribute | Attribute Value | |
|---|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 43pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 2nC @ 5V | |
| Rise Time | 15ns | |
| Vgs (Max) | ±18V | |
| Fall Time (Typ) | 15 ns | |
| Continuous Drain Current (ID) | 200mA | |
| Threshold Voltage | 2.1V | |
| Gate to Source Voltage (Vgs) | 18V | |
| Drain Current-Max (Abs) (ID) | 0.2A | |
| Drain to Source Breakdown Voltage | 60V | |
| Dual Supply Voltage | 60V | |
| Nominal Vgs | 2.1 V | |
| Height | 1.2mm | |
| Length | 3.03mm | |
| Width | 3.05mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Switching Waveforms and Test Circuit
NTR4003, FDC666, FDC558
2N7002 Equivalent P-Channel: BSS84, FDN358P
Other N-Channel MOSFETs: BS170N, IRF3205, 2N7000, IRF1010E, IRF540N
DC-DC converters
eMobility applications
Motor Controls
Amplifiers
Switches
Power Supply Circuits
Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.)
Low current and Low Voltage switching applications
Application where low on-state resistance is required
Download datasheets and manufacturer documentation for STMicroelectronics 2N7002.
Download datasheets and manufacturer documentation for 2N7002
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