2SC1971 NPN Transistor: 2SC1971 Power Transistor, 17V, 2A, Datasheet pdf and Substitute

The 2SC1971  is Designed for  RF  power amplifiers on VHF band mobile radio applications. The max output power this transistor is capable to provide is 7  Watts and it can easily be used in 4 to 5 watts output applications. The max collector dissipation of the transistor is 12.5 watts and the max DC gain is 10-180.

The transistor can not only be used for  RF applications but it can also be used as a switch and it can drive a load of up to 2A with 2A output current it can drive many types of high-power relays, transistors, LEDs, etc.

• Material of Transistor: Si

• Polarity: NPN

• Maximum Collector Power Dissipation (Pc): 12 W

• Maximum Collector-Base Voltage  |Vcb|: 36 V

• Maximum Collector-Emitter Voltage  |Vce|: 18 V

• Maximum Emitter-Base Voltage  |Veb|: 4 V

• Maximum Collector Current |Ic max|: 1 A

• Max. Operating Junction Temperature (Tj): 150 °C

• Transition Frequency (ft): 175 MHz

• Forward Current Transfer Ratio (hFE), MIN: 10

• Replaces Original 2SC1971  in Most Applications

• High Gain Reduces Drive Requirements

• Economical TO-220CE Package

2SC1971 Test Circuit

• RF Amplifier Circuits

• Radios Circuits

• RF Oscillator Circuits

• TV Sets

• Switching loads under 2000mA.

The 2SC1971  transistor is suitable for a wide range of radio and RF applications, including RF amplifiers, RF oscillators, wireless data transfer, TV sets, and so on. Aside from that, it can be utilized in a variety of general switching applications that fall within its capabilities.

 2SC1971 Dimensions

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