2SC2229 BJT NPN Transistor: Datasheet pdf, Pinout and 2SC2229 Equivalents

2SC2229 is a BJT  NPN  transistor available in TO-92L or TO-92MOD  package but with some manufacturers, it is also available in the TO-92 package. It's an NPN triple diffused transistor; they are transistors that are manufactured by diffusing dopants. The transistor has several desirable characteristics, including the ability to operate at high voltage s of up to 150V, a low output capacitance, and a transition frequency of up to 120MHz.

The transistor's collector current maximum is 50mA. To drive a 50mA  load, the maximum voltage required for transistor saturation at its base is merely 0.5V with only 5mA of base current. The output capacitance at the collector is 3.5pF to 5pF, with an 800 mill watt collector dissipation maximum.

Toshiba Semiconductor and Storage 2SC2229-O(TE6,F,M) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage 2SC2229-O(TE6,F,M).

• Type: NPN

• Collector-Emitter Voltage: 150 V

• Collector-Base Voltage: 200 V

• Emitter-Base Voltage: 5 V

• Collector Current: 0.05 A

• Collector Dissipation: 0.8 W

• DC Current Gain (hfe): 70 to 240

• Transition Frequency: 120 MHz

• Operating and Storage Junction Temperature Range: -55 to +150 °C

• Package: TO-92MOD 

• High breakdown voltage  : VCEO = 150 V (min)

• Low output capacitance: Cob = 5.0 pF (max)

• High transition frequency  : fT = 120 MHz (typ.)

2SC2310, 2SC3467, 2SC3468, 3DG2229, KSC2310, KTC1026, 2SC3228, BF422, KSC1506, KTC3206

• Audio Amplifiers

• Audio Amplifier Driver Stages

• High Voltage Applications

• Radio and  RF  Circuits

• Switching loads under 50mA 

The 2SC2229 transistor can be utilized for a wide range of applications. It can be employed in high voltage applications due to its high collector to emitter voltage,  It's also suitable for a wide range of audio amplification and driver circuits. It's also suitable for use in black-and-white video circuits. This transistor.  with a maximum transition frequency of 120MHz, can also be used in  RF circuits below 120MHz, such as AM and FM broadcast and receiving circuits.

It is recommended that when using the 2SC2229 transistor.  you do not use it to its absolute maximum ratings and instead, stay 20 percent below these maximum ratings. The transistor's maximum collector current is 50mA.  so do not drive loads that draw more than 40mA. The transistor's maximum collector to emitter voltage is 150V, so the load voltage should be under 120V, and the transistor should always be used or stored at temperatures between -55 and +150 degrees Celsius.

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Download datasheets and manufacturer documentation for Toshiba Semiconductor and Storage 2SC2229-O(TE6,F,M).