Transistors - Bipolar (BJT) - Single Transistor GP BJT NPN 230V 1A 3-Pin (3+Tab) TO-220(NIS) The 2SC4793 is an NPN epitaxial transistor available in the TO-220F package. This article will unlock more details about 2SC4793.
4646
Nov 11, 2021
Carol Penn
2SC4793 C4793 NPN Transistor
Transistors - Bipolar (BJT) - Single Transistor GP BJT NPN 230V 1A 3-Pin (3 Tab) TO-220(NIS)
The 2SC4793 is an NPN epitaxial transistor available in the TO-220F package. This article will unlock more details about 2SC4793. There is a huge range of Semiconductors, Capacitors, Resistors and ICs in stock. Welcome RFQ.
2SC4793(F,M)
2SC4793 Pinout
2SC4793 Symbol
2SC4793 Footprint
2SC4793 3D Model
The 2SC4793 is an NPN epitaxial transistor available in the TO-220F package. The transistor is primarily designed for power amplification and for use in the output stage of audio amplifiers.
High transition frequency: fT = 100 MHz (typ.)
Complementary to 2SA1837
Package Type: TO-220F
Transistor Type: NPN
Max Collector Current(IC): 1A
Max Collector-Emitter Voltage (VCE): 230V
Max Collector-Base Voltage (VCB): 230V
Max Emitter-Base Voltage (VEBO): 5V
Max Collector Dissipation (Pc): 2 Watt
Minimum & Maximum DC Current Gain (hFE): 100 To 320
Max Storage & Operating temperature: -55 to +150 ℃
Audio amplifier stages
High power audio amplifiers
Motor Driver Applications
Radio and RF applications
Drive load of up to 1A
The equivalent for 2SC4793:
BUX85
2SC2898
2SC3868
2SD792B
MJE13071
MJE15034
MJE16002
Toshiba Semiconductor and Storage 2SC4793(F,M) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage 2SC4793(F,M).
Toshiba Semiconductor and Storage 2SC4793(F,M) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage 2SC4793(F,M).
| Product Attribute | Attribute Value | |
|---|---|---|
| Contact Plating | Copper, Silver, Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack | |
| Number of Pins | 3Pins | |
| Supplier Device Package | TO-220NIS | |
| Collector-Emitter Breakdown Voltage | 230V | |
| Current-Collector (Ic) (Max) | 1A | |
| Number of Elements | 1 Element | |
| hFEMin | 100 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tube | |
| Published | 2004 | |
| Part Status | Obsolete |
| Product Attribute | Attribute Value | |
|---|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | 230V | |
| Max Power Dissipation | 2W | |
| Current Rating | 1A | |
| Frequency | 100MHz | |
| Polarity | NPN | |
| Element Configuration | Single | |
| Power Dissipation | 2W | |
| Power - Max | 2W | |
| Gain Bandwidth Product | 100MHz | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 230V |
| Product Attribute | Attribute Value | |
|---|---|---|
| Max Collector Current | 1A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA 5V | |
| Current - Collector Cutoff (Max) | 1μA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 50mA, 500mA | |
| Voltage - Collector Emitter Breakdown (Max) | 230V | |
| Max Frequency | 100MHz | |
| Frequency - Transition | 100MHz | |
| Collector Base Voltage (VCBO) | 230V | |
| Emitter Base Voltage (VEBO) | 5V | |
| Continuous Collector Current | 1A | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
As previously stated, the 2SC4793 may be used to construct simple and high-power audio amplifier circuits, which is what it was designed for. However, it is not confined to these applications and can also be used for switching. It can also be employed in radio and RF circuits due to its high transition frequency.
Before you use a transistor or any other component in your design or circuit, make sure you know the component's safe operating standards as well as its absolute maximum ratings. It's also crucial to realize that utilizing a component at its absolute maximum ratings puts it under stress, which can result in permanent damage, weakening, or lowering its life span. Therefore, we recommend using a component that's at least 20% below its absolute maximum ratings.
As a result, the 2SC4793 transistor is in the same boat. Because the transistor's maximum collector current is 1A, do not drive loads that draw more than 800mA. Because the maximum collector to emitter voltage is 230V, never drive a load greater than 180V and always store and operate the transistor between -55°C and +150°C.
Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.
TAGS
Comments