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2SK3878 Field Effect Transistor: Equivalent, Datasheet and Diagram

2SK3878 is a three-terminal silicon device. This article is going to introduce 2SK3878 pinout, equivalents, applications, and other details.

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Jan 24, 2022

Archer Edith

Test mosfet on easy way!!

2SK3878 is a three-terminal silicon device. This article is going to introduce 2SK3878 pinout, equivalents, applications, and other details.

 

2SK3878

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2SK3878 Description

2SK3878 is a three-terminal silicon device with current conduction capability of 9A, fast switching speed, l ow on-state resistance, breakdown voltage rating of 900V, and max.

threshold voltage of 4 volts.

They are designed for use in applications  such as switched mode power supplies, DC to DC converters, motor control circuits,UPS, switching regulator  and general purpose switching applications  .

2SK3878 Pinout

2SK3878 Features

  • Marking Code: K3878

  • Type of Transistor  : MOSFET 

  • Type of Control Channel: N -Channel 

  • Maximum Power Dissipation  (Pd): 150 W

  • Maximum Drain-Source Voltage |Vds|: 900 V

  • Maximum Gate-Source Voltage |Vgs|: 30 V

  • Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

  • Maximum Drain Current |Id|: 9 A

  • Maximum Junction Temperature (Tj): 150 °C

  • Total Gate Charge (Qg): 60 nC

  • Rise Time (tr): 25 nS

  • Drain-Source Capacitance (Cd): 190 pF

  • Maximum Drain-Source On-State Resistance  (Rds): 1.3  Ohm 

  • Package: SC65 TO3P 

Specifications

TOSHIBA 2SK3878 technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA 2SK3878.

2SK3878 Tech Specifications

TOSHIBA 2SK3878 technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA 2SK3878.

Product Attribute Attribute Value
Package / CaseTO-3P
Current - Continuous Drain (Id) @ 25℃9A
Power Dissipation (Max)150W
Product Attribute Attribute Value
PackagingTube-packed
FET TypeN-Channel
Rds On (Max) @ Id, Vgs1.3Ω@4A,10V
Product Attribute Attribute Value
Vgs(th) (Max) @ Id4V@1mA
Drain to Source Voltage (Vdss)900V
RoHS StatusRoHS Compliant
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2SK3878 Applications

  • Low drain-source  ON resistance: RDS  (ON) = 1.0 Ω (typ.)

  • High forward transfer admittance  : ⎪Yfs⎪ = 7.0 S (typ.)

  • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)

  • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

2SK3878 Equivalents

2SK3757 , 2SK3766 , 2SK3767 , 2SK3798 , 2SK3799 , 2SK3842 , 2SK3843 , 2SK3845 , 2SK4106 , 2SK3880 , 2SK3940 , 2SK4003 , 2SK4013 , 2SK4014 , 2SK4017 , 2SK4023 , 2SK4026

2SK3878 Package

2SK3878 Manufacturer

Toshiba is a world leader and innovator in pioneering high technology, a diversified manufacturer and marketer of advanced electronic and electrical products spanning information & communications systems; digital consumer products; electronic devices and components; power systems, including nuclear energy; industrial and social infrastructure systems; and home appliances. Toshiba was founded in 1875, and today operates a global network of more than 740 companies, with 204,000 employees worldwide and annual sales surpassing 6.3 trillion yen (US$68 billion).

Frequently Asked Questions

What is the breakdown voltage rating of a three-terminal silicon device?
900V
What is 2SK3878?
2SK3878 is a three-terminal silicon device.
What is 2SK3878 used for?
It is designed for use in switched-mode power supplies.
FAQ
What is the breakdown voltage rating of a three-terminal silicon device?
900V
What is 2SK3878?
2SK3878 is a three-terminal silicon device.
What is 2SK3878 used for?
It is designed for use in switched-mode power supplies.

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