Test mosfet on easy way!!
2SK3878 is a three-terminal silicon device. This article is going to introduce 2SK3878 pinout, equivalents, applications, and other details.
2SK3878 is a three-terminal silicon device. This article is going to introduce 2SK3878 pinout, equivalents, applications, and other details.
152
Jan 24, 2022
Archer Edith
Test mosfet on easy way!!
2SK3878 is a three-terminal silicon device. This article is going to introduce 2SK3878 pinout, equivalents, applications, and other details.
2SK3878 is a three-terminal silicon device with current conduction capability of 9A, fast switching speed, l ow on-state resistance, breakdown voltage rating of 900V, and max.
threshold voltage of 4 volts.
They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits,UPS, switching regulator and general purpose switching applications .

Marking Code: K3878
Type of Transistor : MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 60 nC
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 190 pF
Maximum Drain-Source On-State Resistance (Rds): 1.3 Ohm
Package: SC65 TO3P
TOSHIBA 2SK3878 technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA 2SK3878.
TOSHIBA 2SK3878 technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA 2SK3878.
| Product Attribute | Attribute Value | |
|---|---|---|
| Package / Case | TO-3P | |
| Current - Continuous Drain (Id) @ 25℃ | 9A | |
| Power Dissipation (Max) | 150W |
| Product Attribute | Attribute Value | |
|---|---|---|
| Packaging | Tube-packed | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 1.3Ω@4A,10V |
| Product Attribute | Attribute Value | |
|---|---|---|
| Vgs(th) (Max) @ Id | 4V@1mA | |
| Drain to Source Voltage (Vdss) | 900V | |
| RoHS Status | RoHS Compliant |
Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.)
High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
2SK3757 , 2SK3766 , 2SK3767 , 2SK3798 , 2SK3799 , 2SK3842 , 2SK3843 , 2SK3845 , 2SK4106 , 2SK3880 , 2SK3940 , 2SK4003 , 2SK4013 , 2SK4014 , 2SK4017 , 2SK4023 , 2SK4026

Toshiba is a world leader and innovator in pioneering high technology, a diversified manufacturer and marketer of advanced electronic and electrical products spanning information & communications systems; digital consumer products; electronic devices and components; power systems, including nuclear energy; industrial and social infrastructure systems; and home appliances. Toshiba was founded in 1875, and today operates a global network of more than 740 companies, with 204,000 employees worldwide and annual sales surpassing 6.3 trillion yen (US$68 billion).
TAGS
Comments