
MOSFET N-CH 30V 5.7A SOT23
The AO3400A is the high cell density trenched N-VDS 30 V n-channel MOSFETs. This article is going to introduce pinout, specifications, features, manufacturer, and other details about AO3400A MOSFET.
MOSFET N-CH 30V 5.7A SOT23 The AO3400A is the high cell density trenched N-VDS 30 V n-channel MOSFETs. This article is going to introduce pinout, specifications, features, manufacturer, and other details about AO3400A MOSFET.
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Jan 24, 2022
Tracy Stella

MOSFET N-CH 30V 5.7A SOT23
The AO3400A is the high cell density trenched N-VDS 30 V n-channel MOSFETs. This article is going to introduce pinout, specifications, features, manufacturer, and other details about AO3400A MOSFET.
The AO3400A is a trenched N-VDS 30 V ch MOSFET with a high cell density that delivers good RDS ON and efficiency for most small power switching RDS (ON), typ 27 m and load switch applications. With complete function reliability approval, the AO3400A meets the RoHS and Green Product requirements.


AO3400A Symbol

AO3400A Footprint

AO3400A 3D Model
Alpha & Omega Semiconductor Inc. AO3400A technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AO3400A.
Alpha & Omega Semiconductor Inc. AO3400A technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AO3400A.
| Product Attribute | Attribute Value | |
|---|---|---|
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 5.7A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 1.4W Ta | |
| Turn Off Delay Time | 25 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2011 | |
| Pbfree Code | yes | |
| Part Status | Not For New Designs |
| Product Attribute | Attribute Value | |
|---|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Pin Count | 3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Number of Channels | 1Channel | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1.4W | |
| Turn On Delay Time | 3 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 26.5m Ω @ 5.7A, 10V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Product Attribute | Attribute Value | |
|---|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 4.5V | |
| Vgs (Max) | ±12V | |
| Continuous Drain Current (ID) | 5.7A | |
| Threshold Voltage | 650mV | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain-source On Resistance-Max | 0.0265Ohm | |
| Drain to Source Breakdown Voltage | 30V | |
| Max Junction Temperature (Tj) | 150°C | |
| Height | 1.25mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.4 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.45 V
Maximum Drain Current |Id|: 5.7 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 2.5 nS
Drain-Source Capacitance (Cd): 75 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0265 Ohm
Package: SOT23-3
VDS 30V
ID (at VGS =10V) 5.7A
RDS (ON) (at VGS =10V) < 26.5mΩ
RDS (ON) (at VGS = 4.5V) < 32mΩ
RDS (ON) (at VGS = 2.5V) < 48mΩ
| Attribute | Description |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
MTP9575J3 , MTP9575L3 , MTP9575Q8 , MTP9620Q8 , MTP9620V8 , MTS3572G6 , AO3160 , AO3162 , IRFP260N , AO3402 , AO3403 , AO3404 , AO3404A , AO3406 , AO3407A , AO3409 , AO3413

Alpha and Omega Semiconductor, Inc., or AOS, is a designer, developer, and global supplier of a broad range of power semiconductors, including a wide portfolio of Power MOSFET and Power IC products. AOS seeks to differentiate itself by integrating its expertise in device physics, process technology, design, and advanced packaging to optimize product performance and cost, and its product portfolio is designed to meet the ever-increasing power efficiency requirements in high volume applications, including portable computers, flat-panel TVs, battery packs, portable media players and power supplies.
Download datasheets and manufacturer documentation for AO3400A
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