AO6800:30V Dual N-Channel MOSFET

The AO6800 employs advanced trench technology to achieve high RDS(ON), low gate charge, and operation at gate voltages as low as 2.5V. This device can function as a load switch or in PWM applications.

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• Type of Control Channel: N -Channel

• Maximum Power Dissipation (Pd): 1.15 W

• Maximum Drain-Source Voltage |Vds|: 30 V

• Maximum Gate-Source Voltage |Vgs|: 12 V

• Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V

• Maximum Drain Current |Id|: 3.4 A

• Maximum Junction Temperature (Tj): 150 °C

• Rise Time (tr): 1.5 nS

• Drain-Source Capacitance (Cd): 35 pF

• Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm

• Package: TSOP-6

   

1. Communications equipment: Broadband fixed-line access/Datacom module/Wired networking/Wireless infrastructure

2. Industrial: Aerospace & defense/Appliances/Building automation/Electronic point of sale (EPOS)/Factory automation & control/Grid infrastructure/Industrial transport (non-car & non-light truck)/Lighting/Medical/Motor drives/Power delivery/Pro audio, video & signage/Test & measurement

3. Personal electronics:Connected peripherals & printers/Data storage/Gaming/Home theater & entertainment/Mobile phones/PC & notebooks/Portable electronics/Tablets/TV/Wearable (non-medical)

VBsemi Semiconductor (Taiwan) Co., Ltd., founded in the spring of 2003, is a national high-tech enterprise that integrates MOSFET wafers.

Development and design, packaging and testing, sales services, and technical support are some of the services offered.

The company is dedicated to producing mos tubes, serving terminal manufacturers in the middle and high-end markets, adhering to ISO9001 international quality standards, and holding over ten software copyrights and various honorary titles.

VBsemi Elec AO6800 technical specifications, attributes, parameters and parts with similar specifications to VBsemi Elec AO6800.