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AS6C62256 CMOS SRAM: Features, Pinout and Datasheet

SRAM 256K, 2.7-5.5V, 55ns 32K x 8 Asynch SRAM The AS6C62256 is a 262,144-bit low power CMOS static random access memory organized as 32,768 words by 8 bits.

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Jan 25, 2022

Archer Edith

AS6C62256 32K SRAM Integrated Circuit

 

SRAM 256K, 2.7-5.5V, 55ns 32K x 8 Asynch SRAM

The AS6C62256 is a 262,144-bit low power CMOS static random access memory organized as 32,768 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. The AS6C62256 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. Furthermore, Huge range of Semiconductors, Capacitors, Resistors and IcS in stock. Welcome RFQ.

AS6C62256-55PCN

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AS6C62256 Pinout

The following figure is the diagram of AS6C62256 pinout.

Pinout

AS6C62256 CAD Model

The followings are AS6C62256 Symbol, Footprint, and 3D Model.

PCB Symbol

 

PCB Footprint

 

3D Model

AS6C62256 Overview

The AS6C62256 is a 262,144-bit low power CMOS static random access memory organized as 32,768 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C62256 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The AS6C62256 operates with wide range power supply 2.7 ~ 5.5V.

This article provides you with a basic overview of the AS6C62256 CMOS Static Random Access Memory, including its pin descriptions, features and specifications, etc., to help you quickly understand what AS6C62256 is.

AS6C62256 Features

● Access time : 55ns

● Low power consumption:

   ◆ Operation current: 15mA (TYP.), VCC = 3.0V

   ◆ Standby current: 1µA (TYP.), VCC = 3.0V

● Wide range power supply : 2.7 ~ 5.5V

● Fully Compatible with all Competitors 5V product

● Fully Compatible with all Competitors 3.3V product

● All inputs and outputs TTL compatible

● Fully static operation

● Tri-state output

● Data retention voltage :1.5V (MIN.)

● All products ROHS Compliant

● Package : 28-pin 600 mil PDIP

Specifications

Alliance Memory, Inc. AS6C62256-55PCN technical specifications, attributes, parameters and parts with similar specifications to Alliance Memory, Inc. AS6C62256-55PCN.

AS6C62256-55PCN Tech Specifications

Alliance Memory, Inc. AS6C62256-55PCN technical specifications, attributes, parameters and parts with similar specifications to Alliance Memory, Inc. AS6C62256-55PCN.

Product Attribute Attribute Value
Factory Lead Time8 Weeks
MountThrough Hole
Mounting TypeThrough Hole
Package / Case28-DIP (0.600, 15.24mm)
Number of Pins28Pins
Memory TypesVolatile
Usage LevelCommercial grade
Operating Temperature0°C~70°C TA
PackagingTube
Published2005
JESD-609 Codee3/e6
Pbfree Codeyes
Part StatusActive
Moisture Sensitivity Level (MSL)1 (Unlimited)
Number of Terminations28Terminations
ECCN CodeEAR99
Product Attribute Attribute Value
Terminal FinishMATTE TIN/TIN BISMUTH
HTS Code8542.32.00.32
Voltage - Supply2.7V~5.5V
Terminal PositionDUAL
Number of Functions1Function
Supply Voltage3.3V
Terminal Pitch2.54mm
Pin Count28
Operating Supply Voltage3.3V
Supply Voltage-Max (Vsup)5.5V
Power Supplies3/5V
Supply Voltage-Min (Vsup)2.7V
Memory Size256Kb 32K x 8
Number of Ports1Port
Memory FormatSRAM
Memory InterfaceParallel
Product Attribute Attribute Value
Organization32KX8
Output Characteristics3-STATE
Write Cycle Time - Word, Page55ns
Address Bus Width15b
Density256 kb
Standby Current-Max0.00002A
Access Time (Max)55 ns
I/O TypeCOMMON
Standby Voltage-Min2V
Reverse PinoutYES
Height3.81mm
Length36.32mm
Width13.21mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead FreeLead Free
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AS6C62256 Functional Block Diagram

The following is the Functional Block Diagram of AS6C62256.

Functional Block Diagram

 

AS6C62256 Equivalent

       Model number              Manufacturer                                                    Description
K6X0808C1D-DF55 Samsung Semiconductor Standard SRAM, 32KX8, 55ns, CMOS, PDIP28, 0.600 INCH, DIP-28
K6X0808C1D-DF550 Samsung Semiconductor Standard SRAM, 32KX8, 55ns, CMOS, PDIP28, 0.600 INCH, DIP-28

AS6C62256 Package

The following diagrams show the AS6C62256 package.

28 pin 600 mil PDIP Package Outline Dimension View A

 

28 pin 600 mil PDIP Package Outline Dimension View B

 

28 pin 600 mil PDIP Package Outline Dimension View C

AS6C62256 Manufacturer

Alliance Memory, Inc. is a worldwide provider of LEGACY memory products for the communications, computing, industrial and consumer markets. The company supports a full range of 3.3 V and 5 V asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; synchronous SRAMS, low-power SRAMs and ZMD low-power SRAMs. Alliance Memory also offers synchronous DRAMs (SDR),DDR1, DDR2 and DDR3 products. Alliance Memory, Inc. is a privately held company with headquarters in San Carlos, California, regional HQ in United Kingdom and Taiwan with regional sales offices in Germany, France, Italy, Sweden (covering the Nordic region) and South East Asia.

Datasheet PDF

AS6C62256-55PCN Documents

Download datasheets and manufacturer documentation for AS6C62256-55PCN

Datasheets
AS6C62256
Environmental Information
RoHS 3 Cert

Frequently Asked Questions

How many pins of AS6C62256?
28 Pins.
What’s the operating temperature of AS6C62256?
0°C~70°C TA.
What is the essential property of the AS6C62256?
The AS6C62256 is a 262,144-bit low power CMOS static random access memory organized as 32,768 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. The AS6C62256 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application.
FAQ
How many pins of AS6C62256?
28 Pins.
What’s the operating temperature of AS6C62256?
0°C~70°C TA.
What is the essential property of the AS6C62256?
The AS6C62256 is a 262,144-bit low power CMOS static random access memory organized as 32,768 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. The AS6C62256 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application.

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