AT45DB321E SPI Serial Flash Memory: Pinout, Features and Datasheet

The following figure is the diagram of AT45DB321E pinout.

The followings are AT45DB321E Symbol, Footprint, and 3D Model.

PCB Symbol

PCB Footprint

3D Model

The Adesto® AT45DB321E is a 2.3V minimum, serial-interface sequential access Flash memory ideally suited for a wide variety of digital voice, image, program code, and data storage applications. The AT45DB321E also supports the RapidS serial interface for applications requiring very high speed operation. Its 34,603,008 bits of memory are organized as 8,192 pages of 512 bytes or 528 bytes each. In addition to the main memory, the AT45DB321E also contains two SRAM buffers of 512/528 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed. Interleaving between both buffers can dramatically increase a system's ability to write a continuous data stream. The device is optimized for use in many commercial and industrial applications where high-density, low-pin count, low-voltage, and low-power are essential. To allow for simple in-system re-programmability, the AT45DB321E does not require high input voltages for programming. The device operates from a single 2.3V to 3.6V power supply for the erase and program and read operations.

This article provides you with a basic overview of the AT45DB321E SPI Serial Flash Memory, including its pin descriptions, features and specifications, etc., to help you quickly understand what AT45DB321E is.

● Single 2.3V - 3.6V supply

● Serial Peripheral Interface (SPI) compatible

   ◆ Supports SPI modes 0 and 3

   ◆ Supports RapidS™ operation

● Continuous read capability through entire array

   ◆ Up to 85MHz

   ◆ Low-power read option up to 15MHz

   ◆ Clock-to-output time (t_V) of 6ns maximum

● User configurable page size

   ◆ 512 bytes per page

   ◆ 528 bytes per page (default)

   ◆ Page size can be factory pre-configured for 512 bytes

● Two fully independent SRAM data buffers (512/528 bytes)

● Flexible programming options

   ◆ Byte/Page Program (1 to 512/528 bytes) directly into main memory

   ◆ Buffer Write

   ◆ Buffer to Main Memory Page Program

● Flexible erase options

   ◆ Page Erase (512/528 bytes)

   ◆ Block Erase (4 KB)

   ◆ Sector Erase (64 KB)

   ◆ Chip Erase (32 Mbits)

● Program and Erase Suspend/Resume

● Advanced hardware and software data protection features

   ◆ Individual sector protection

   ◆ Individual sector lock-down to make any sector permanently read-only

● 128-byte, One-Time Programmable (OTP) Security Register

   ◆ 64 bytes factory programmed with a unique identifier

   ◆ 64 bytes user programmable

● Hardware and software controlled reset options

● JEDEC Standard Manufacturer and Device ID Read

● Low-power dissipation

   ◆ 400nA Ultra-Deep Power-Down current (typical)

   ◆ 3µA Deep Power-Down current (typical)

   ◆ 25µA Standby current (typical)

   ◆ 7mA Active Read current (typical)

● Endurance: 100,000 program/erase cycles per page minimum

● Data retention: 20 years

● Green (Pb/Halide-free/RoHS compliant) packaging options

   ◆ 8-lead SOIC (0.208" wide)

   ◆ 8-pad Ultra-thin DFN (5 x 6 x 0.6mm)

   ◆ Die in Wafer Form

Adesto Technologies AT45DB321E-MHF-T technical specifications, attributes, parameters and parts with similar specifications to Adesto Technologies AT45DB321E-MHF-T.

The following is the Block Diagram of AT45DB321E.

Block Diagram

The following is the Memory Architecture Diagram of AT45DB321E.

Sector Architecture

Block Architecture ＆ Page Architecture

● Digital voice

● Image

● Program code

● Data storage applications

The following diagram shows the AT45DB321E package.

Top View

Side View

Bottom View

Adesto Technologies provides application-specific and memory solutions optimized for the energy, data and security demands of IoT devices designed for the industrial, consumer, medical and communications markets. Adesto's Flagship memory family: DataFlash: Saves system energy, reduces board part count, saves microcontroller I/Os, widest operating voltage and power fail protection. Fusion: Designed for battery operated devices in the IoT space. Widest operating voltage and lowest standby current in the industry. Standard Flash: Lowest cost alternative, industry standard footprint and densities up to 128 Mb. Moneta: Industry's lowest power memory. Core voltage at 1.2 volts and 50 times lower power than competing data storage solutions.