DIODE GEN PURP 75V 200MA SOD323
BAS416 is an epitaxial, medium-speed switching diode. This article covers its datasheet, pinout, application and more details about BAS416.
BAS416 Diode: NXP BAS416, 75V, SOD 323, Datasheet PDF
DIODE GEN PURP 75V 200MA SOD323 BAS416 is an epitaxial, medium-speed switching diode. This article covers its datasheet, pinout, application and more details about BAS416.
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Jan 19, 2022
Hermosa Martin
BAS416,115
500000In Stock
Min.: 1 Mult.: 1
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.06277 | $0.06 |
| 500+ | $0.04616 | $23.08 |
| 1000+ | $0.03846 | $38.46 |
| 2000+ | $0.03529 | $70.58 |
| 5000+ | $0.03298 | $164.9 |
| 10000+ | $0.03068 | $306.8 |
| 15000+ | $0.02967 | $445.05 |
| 50000+ | $0.02917 | $1458.5 |
Unit Price:$0.06277
Subtotal: $0.06
Quick Links
BAS416 Pinout
BAS416 CAD Model
BAS416 Description
BAS416 is an epitaxial, medium-speed switching diode with a low leakage current encapsulated in a small SOD323 SMD plastic package.
BAS416 Feature
• Plastic SMD package
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 µs
• Continuous reverse voltage: max. 75 V
• Repetitive peak reverse voltage: max. 85 V
• Repetitive peak forward current: max. 500 mA
BAS416 Application
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Low-leakage current applications in surface-mounted circuits
BAS416 Alternatives
The alternatives for BAS416:
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BAS416,115
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BAS416A
BAS416 Test Circuit
The following figure shows the BAS416 test circuit:
BAS416 Reverse Recovery Voltage Test Circuit and Waveforms
Specifications
Nexperia USA Inc. BAS416,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BAS416,115.
BAS416,115 Tech Specifications
BAS416,115 Tech Specifications
Nexperia USA Inc. BAS416,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BAS416,115.
| Product Attribute | Attribute Value | |
|---|---|---|
| Factory Lead Time | 4 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-76, SOD-323 | |
| Surface Mount | YES | |
| Number of Pins | 2Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature (Max.) | 150°C | |
| Packaging | Tape & Reel (TR) | |
| Published | 2003 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Product Attribute | Attribute Value | |
|---|---|---|
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| HTS Code | 8541.10.00.70 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | BAS416 | |
| Pin Count | 2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Product Attribute | Attribute Value | |
|---|---|---|
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 5nA @ 75V | |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 150mA | |
| Forward Current | 200mA | |
| Operating Temperature - Junction | 150°C Max | |
| Voltage - DC Reverse (Vr) (Max) | 75V | |
| Current - Average Rectified (Io) | 200mA DC | |
| Reverse Recovery Time | 3μs | |
| Rep Pk Reverse Voltage-Max | 85V | |
| Capacitance @ Vr, F | 2pF @ 0V 1MHz | |
| RoHS Status | ROHS3 Compliant |
BAS416 Dimensions
BAS416 Manufacturer
Nexperia is a dedicated global leader in Discretes, Logic and MOSFETs devices. This new company became independent at the beginning of 2017. Focused on efficiency, Nexperia produces consistently reliable semiconductor components at a high volume: 85 billion annually. The company’s extensive portfolio meets the stringent standards set by the Automotive industry. And industry-leading small packages, produced in their own manufacturing facilities, combine power and thermal efficiency with best-in-class quality levels. Built on over half a century of expertise, Nexperia has 11,000 employees across Asia, Europe and the U.S. supporting customers globally.
Datasheet PDF
Download datasheets and manufacturer documentation for Nexperia USA Inc. BAS416,115.
BAS416,115 Documents
BAS416,115 Documents
Download datasheets and manufacturer documentation for BAS416,115
Datasheets
BAS416
ReachStatement
NXP-Semiconductors-company-13.pdf
PCN Assembly/Origin
Mult Dev Wafer Chg 11/Jan/2020
Frequently Asked Questions
What is diode switching characteristics?
The switching diode behaves as a short-circuited for an instance in the reverse direction. The minority carriers will cross the junction and conduct the current, which is called as Reverse Saturation Current. ... Before t1 diode is under steady-state forward bias condition
What is diode switching times?
• Switching Time of a diode is the time it takes to switch the diode between two. states (ON and OFF states).
• Assume R S is large enough that all current flows through the diode in forwarding bias. conditions.
FAQ
What is diode switching characteristics?
The switching diode behaves as a short-circuited for an instance in the reverse direction. The minority carriers will cross the junction and conduct the current, which is called as Reverse Saturation Current. ... Before t1 diode is under steady-state forward bias condition
What is diode switching times?
• Switching Time of a diode is the time it takes to switch the diode between two. states (ON and OFF states).
• Assume R S is large enough that all current flows through the diode in forwarding bias. conditions.
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