STMICROELECTRONICS BC107Bipolar (BJT) Single Transistor, NPN, 45 V, 300 mW, 100 mA, 120
550
Sep 10, 2021
Joan Roger
KiCad tutorial 2: Amplitude modulation circuit using transistor bc107
STMICROELECTRONICS BC107Bipolar (BJT) Single Transistor, NPN, 45 V, 300 mW, 100 mA, 120
Hi, fellas. Welcome back to the new post today. BC107 is a low-power NPN bipolar junction transistor, which is packaged in a TO-18 metal can. This article mainly introduces pinout, equivalent, datasheet, and other detailed information about STMicroelectronics BC107.
BC107
BC107 is a low-power NPN bipolar junction transistor, which is packaged in a TO-18 metal can. It is mainly designed for general switching and amplification purposes. It is mainly composed of three terminals, which are called emitter, base, and collector.
As a current control device, the small current on the base side is used to control the large current on the emitter and collector sides. When a voltage is applied to the base terminal, it will be biased and draw current and begin to control the large current on the emitter and collector sides.
The movement of electrons plays an important role in the conductivity of any transistor. BC107 is a bipolar junction transistor in which conductivity is achieved by two charge carriers including electrons and holes, but most of the charge carriers are electrons.
The free movement of electrons is like a bridge between the emitter and the collector. The emitter emits electrons, which are then collected by the collector. Bases are used to control the number of electrons. Since it is an NPN transistor, the base is extremely positive relative to the emitter.
The function and doping concentration of the emitter, base, and collector are different. Compared with the base and collector, the emitter is highly doped. And the voltage on the collector side is much greater than the base voltage. When two diodes are connected back to back, they form a bipolar junction transistor.
It is mainly composed of three terminals, which are called 1. base 2. Emitter and 3. collector.
BC107 Pinout
| Pin Number | Pin Name | Description |
| 1 | Base | Controls the biasing of the transistor, Used to turn ON or OFF the transistor |
| 2 | Emitter | Current Drains out through emitter, normally connected to ground |
| 3 | Collector | Current flows in through collector, normally connected to load |
BC107 Pin Description
Symbol
Footprint
●Small Signal NPN Transistor
●Current Gain (hFE): 450 (maximum)
●Continuous Collector current (IC) is 100mA
●Collector-Emitter voltage (VCEO) is 45V
●Collector-Base voltage (VCB0) is 50V
●Emitter Base Voltage (VBE0) is 6V
●Available in To-18 Metal can Package
STMicroelectronics BC107 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BC107.
STMicroelectronics BC107 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BC107.
| Product Attribute | Attribute Value | |
|---|---|---|
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Contact Plating | Tin | |
| Package / Case | TO-206AA, TO-18-3 Metal Can | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Collector-Emitter Breakdown Voltage | 45V | |
| Collector-Emitter Saturation Voltage | 600mV | |
| hFEMin | 200 | |
| Operating Temperature | 175°C TJ | |
| Packaging | Tube | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Product Attribute | Attribute Value | |
|---|---|---|
| Number of Terminations | 3Terminations | |
| Termination | Through Hole | |
| ECCN Code | EAR99 | |
| Voltage - Rated DC | 45V | |
| Max Power Dissipation | 300mW | |
| Terminal Position | BOTTOM | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Current Rating | 100mA | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | BC107 | |
| Pin Count | 3 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Power Dissipation | 300mW | |
| Transistor Application | AMPLIFIER |
| Product Attribute | Attribute Value | |
|---|---|---|
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 45V | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 2mA 5V | |
| Current - Collector Cutoff (Max) | 15nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA | |
| Transition Frequency | 150MHz | |
| Collector Base Voltage (VCBO) | 50V | |
| Emitter Base Voltage (VEBO) | 6V | |
| Height | 5.3mm | |
| Length | 5.8mm | |
| Width | 5.8mm | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant |
| Part Number | Description | Manufacturer |
| JANTXV2N5581TRANSISTORS | Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-46, HERMETIC SEALED, METAL CAN-3 | Semicoa Semiconductors |
| 2N706TRANSISTORS | Small Signal Bipolar Transistor, 0.05A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN | Microsemi Corporation |
| 2N2369ZTRANSISTORS | 15V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18 | STMicroelectronics |
| BCW65ALT1TRANSISTORS | Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB | Motorola Semiconductor Products |
| MPSL51TRETRANSISTORS | Small Signal Bipolar Transistor, 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, | Central Semiconductor Corp |
| MPSL51/D27ZTRANSISTORS | 600mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 | Texas Instruments |
| BCW65ATRTRANSISTORS | Small Signal Bipolar Transistor, 32V V(BR)CEO, 1-Element, NPN, Silicon, | Central Semiconductor Corp |
| MPSL51/D75ZTRANSISTORS | 600mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 | Texas Instruments |
| BCW65ATR13LEADFREETRANSISTORS | Small Signal Bipolar Transistor, 32V V(BR)CEO, 1-Element, NPN, Silicon, | Central Semiconductor Corp |
| MPSL51TRELEADFREETRANSISTORS | Small Signal Bipolar Transistor, 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, | Central Semiconductor Corp |
The BC107 is a low signal NPN that is known for its low noise operations making it famously used in signal processing circuits and television receivers. The transistor is still available in the market due to its legacy but you will find better modern transistors as replacements for BC107.
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage (IE = 0) | 50 | V |
| VCEO | Collector-Emitter Voltage (IB = 0) | 45 | V |
| VEBO | Emitter-Base Voltage (IC = 0) | 6 | V |
| IC | Collector Current | 100 | mA |
| Ptot | Total Dissipation at Tamb ≤ 25 oC /at TC ≤ 25 oC | 0.3/0.75 | W/W |
| Tstg | Storage Temperature | -55 to 175 | °C |
| Tj | Max. Operating Junction Temperature | 175 | °C |
●Used in driver modules like relay driver, LED driver, etc.
●Used in amplifier modules like audio amplifiers, signal amplifiers, etc.
●Used in Darlington pair
●Used in signal processing
●Used in power management
●Used in portable devices
●Used in consumer electronics
●Used for industrial purpose
STMicroelectronics is a French-Italian multinational electronics and semiconductor manufacturer, headquartered in Plan-les-Ouates near Geneva, Switzerland. The company originated from the merger of two state-owned semiconductor companies in 1987: "Thomson Semiconducteurs" in France and "SGS Microelettronica" in Italy. It is often referred to as "ST" and is the largest semiconductor chip manufacturer in Europe by revenue.
STMicroelectronics corporate headquarters and EMEA regional headquarters are located in Geneva, while the holding company STMicroelectronics N.V. is incorporated in the Netherlands. The company's US headquarters are located in Koper, Texas. The Asia-Pacific region is headquartered in Singapore, while the Japan and South Korea operations are headquartered in Tokyo. The headquarter of the company in China is located in Shanghai.
Download datasheets and manufacturer documentation for BC107
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