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HomeCommunitySubjectBC237 Transistor: Datasheet PDF, Pinout, BC547 vs. BC237

BC237 Transistor: Datasheet PDF, Pinout, BC547 vs. BC237

Transistors - Bipolar (BJT) - Single TRANS NPN 45V 0.1A TO-92 BC237 is a TO-92 package NPN BJT transistor.

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Nov 20, 2021

Beatrice Ellis

BC547 VS BC237

Transistors - Bipolar (BJT) - Single TRANS NPN 45V 0.1A TO-92

BC237 is a TO-92 package NPN BJT transistor. This post will unlock more details about BC237, including its datasheet, pinout, equivalent and more about BC237. Welcome your RFQ!

BC237BG

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BC237 Pinout

BC237 CAD Model

BC237 Symbol

 

BC237 Footprint

 

BC237 3D Model

BC237 Description

The BC237 is a general-purpose  NPN  BJT transistor with a TO-92 package that can be used for switching as well as amplification. Because the transistor's maximum collector current is 100 mA, it can be utilized to drive and control a large number of loads in circuits with less than 100 mA. The maximum collector dissipation of 500mW and maximum DC current gain of up to 800, on the other hand, make it excellent for audio and other electronic signal amplification.

BC237 Feature

  • Package Type: TO-92

  • Transistor Type: NPN

  • Max Collector Current(IC): 100mA

  • Max Collector-Emitter Voltage (VCE): 45V

  • Max Collector-Base Voltage (VCB): 50V

  • Max Emitter-Base Voltage (VEBO): 6V

  • Max Collector Dissipation (Pc): 500 miliWatt

  • Max Transition Frequency (fT): 150 MHz

  • Minimum & Maximum DC Current Gain (hFE): 120 – 800

  • Max Storage & Operating temperature Should Be: -55 to +150 ℃

BC237 Application

  • Sensor Circuits

  • Audio Preamplifier Circuits

  • Signal Amplification Circuits

  • Audio amplifier circuits

  • Audio Amplifier Stages

  • Switching Loads under 100mA

  • Darlington Pairs

  • RF Circuits

 

BC237 Equivalent

The equivalent for BC237:

  • BC337

  • BC547

  • BC546

  • BC549

  • BC550

  • S9014

  • C945 

How to Use BC237?

BC237 can be utilized in any general-purpose application that meets its specifications. When used as a switch, it can drive loads up to 100mA and can regulate and drive relays, LEDs, small DC motors, high power transistors, and other devices. It can, on the other hand, be employed as an amplifier or preamplifier in electronics to amplify audio and other types of signals. It also works well in  RF  circuits below 150MHz, such as FM receivers, FM and VHF oscillators, and so on.

 

Specifications

ON Semiconductor BC237 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC237.

BC237BG Tech Specifications

ON Semiconductor BC237BG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC237BG.

Product Attribute Attribute Value
Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)
Contact PlatingCopper, Silver, Tin
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Surface MountNO
Number of Pins3Pins
Weight4.535924g
Transistor Element MaterialSILICON
Collector-Emitter Breakdown Voltage45V
Collector-Emitter Saturation Voltage200mV
Number of Elements1 Element
hFEMin200
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published2007
JESD-609 Codee1
Pbfree Codeyes
Part StatusObsolete
Product Attribute Attribute Value
Moisture Sensitivity Level (MSL)1 (Unlimited)
Number of Terminations3Terminations
ECCN CodeEAR99
Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC45V
Max Power Dissipation1W
Terminal PositionBOTTOM
Peak Reflow Temperature (Cel)260
Current Rating100mA
Frequency200MHz
Time@Peak Reflow Temperature-Max (s)40
Base Part NumberBC237
Pin Count3
Element ConfigurationSingle
Power Dissipation350mW
Transistor ApplicationAMPLIFIER
Gain Bandwidth Product200MHz
Polarity/Channel TypeNPN
Product Attribute Attribute Value
Transistor TypeNPN
Collector Emitter Voltage (VCEO)45V
Max Collector Current100mA
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V
Current - Collector Cutoff (Max)15nA
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
Transition Frequency200MHz
Collector Base Voltage (VCBO)50V
Emitter Base Voltage (VEBO)6V
Height5.33mm
Length5.2mm
Width4.19mm
REACH SVHCNo SVHC
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead FreeLead Free
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BC237 Package

BC237 Manufacturer

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy-efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centres in key markets throughout North America, Europe, and the Asia Pacific regions.

Datasheet PDF

BC237BG Documents

Download datasheets and manufacturer documentation for BC237BG

Frequently Asked Questions

How does BJT transistor work?
An NPN transistor consists of a layer of P-doped semiconductor between two layers of N-doped material, where electrons are passed from the emitter to the collector instead. The emitter then “emits” electrons into the base, with the base controlling the no. of electrons the emitter emits.
What is difference between BJT and transistor?
There are two types of transistors which are known as Field Effect Transistors (FET) and Bipolar Junction Transistors (BJT). Therefore, a transistor is a semiconducting device that amplifies and switches input signals, and BJT is a type of transistor.
How BJT can be used as a switch?
The transistor can be used as a switch if biased in the saturation and cut-off regions. This allows current to flow (or not) in other parts of a circuit. Because a transistor's collector current is proportionally limited by its base current, it can be used as a sort of current-controlled switch.
FAQ
How does BJT transistor work?
An NPN transistor consists of a layer of P-doped semiconductor between two layers of N-doped material, where electrons are passed from the emitter to the collector instead. The emitter then “emits” electrons into the base, with the base controlling the no. of electrons the emitter emits.
What is difference between BJT and transistor?
There are two types of transistors which are known as Field Effect Transistors (FET) and Bipolar Junction Transistors (BJT). Therefore, a transistor is a semiconducting device that amplifies and switches input signals, and BJT is a type of transistor.
How BJT can be used as a switch?
The transistor can be used as a switch if biased in the saturation and cut-off regions. This allows current to flow (or not) in other parts of a circuit. Because a transistor's collector current is proportionally limited by its base current, it can be used as a sort of current-controlled switch.

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