TRANS NPN 80V 1A SOT223 Good afternoon! NPN transistor BCP56 is a low-frequency power amplifier. These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. This article mainly introduces features, pinout, datasheet and other detailed information about ON Semiconductor BCP56.
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Sep 21, 2021
Max Gallup
TRANS NPN 80V 1A SOT223
Good afternoon! NPN transistor BCP56 is a low-frequency power amplifier. These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. This article mainly introduces features, pinout, datasheet and other detailed information about ON Semiconductor BCP56.
BCP56T1G
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.65764 | $0.66 |
| 10+ | $0.62041 | $6.2 |
| 100+ | $0.58529 | $58.53 |
| 500+ | $0.55216 | $276.08 |
| 1000+ | $0.52091 | $520.91 |
NPN transistor BCP56 is a low-frequency power amplifier. These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications.
NPN transistor BCP56 is a medium power tube, Vceo: 80, Vcbo: 100, Vbeo: 5, Ic<=1A, DC magnification: Hfe, min>=25, max>=250. The minimum current gain bandwidth product ft (MHz): 50 (Typ).
The NPN transistor is composed of three semiconductors, two of which are N-type and one P-type semiconductor, with the P-type semiconductor in the middle and two N-type semiconductors on both sides. The triode is the most important device in the electronic circuit, and its main function is current amplification and switching.
Symbol
Footprint
3D Model
• High Current: 1.0 A
• The SOT−223 Package Can Be Soldered Using Wave Or Reflow. The Formed Leads Absorb Thermal Stress During Soldering, Eliminating The Possibility Of Damage To The Die
• Available In 12 mm Tape And Reel
Use BCP56T1G To Order The 7 Inch/1000 Unit Reel
Use BCP56T3G To Order The 13 Inch/4000 Unit Reel
• PNP Complement Is BCP53T1G
• S And NSV Prefix For Automotive And Other Applications Requiring Unique Site And Control Change Requirements; AEC−Q101
Qualified And PPAP Capable
• These Devices Are Pb−Free, Halogen Free/BFR Free And Are RoHS Compliant
ON Semiconductor BCP56T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BCP56T1G.
ON Semiconductor BCP56T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BCP56T1G.
| Product Attribute | Attribute Value | |
|---|---|---|
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) | |
| Factory Lead Time | 8 Weeks | |
| Contact Plating | Tin | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-261-4, TO-261AA | |
| Surface Mount | YES | |
| Number of Pins | 4Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 80V | |
| Collector-Emitter Saturation Voltage | 500mV | |
| Number of Elements | 1 Element | |
| hFEMin | 40 | |
| Operating Temperature | -65°C~150°C TJ | |
| Packaging | Cut Tape (CT) | |
| Published | 2005 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active |
| Product Attribute | Attribute Value | |
|---|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Voltage - Rated DC | 80V | |
| Max Power Dissipation | 1.5W | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Current Rating | 1A | |
| Frequency | 130MHz | |
| Base Part Number | BCP56 | |
| Pin Count | 4 | |
| Element Configuration | Single | |
| Power Dissipation | 1.5W | |
| Case Connection | COLLECTOR | |
| Transistor Application | AMPLIFIER | |
| Gain Bandwidth Product | 130MHz | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN |
| Product Attribute | Attribute Value | |
|---|---|---|
| Collector Emitter Voltage (VCEO) | 80V | |
| Max Collector Current | 1A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA 2V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA | |
| Transition Frequency | 130MHz | |
| Max Breakdown Voltage | 80V | |
| Collector Base Voltage (VCBO) | 100V | |
| Emitter Base Voltage (VEBO) | 5V | |
| Max Junction Temperature (Tj) | 150°C | |
| Height | 1.75mm | |
| Length | 6.5mm | |
| Width | 3.5mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Functional Block Diagram
Marking Diagram
| Part Number | Description | Manufacturer |
| BCP56E6327TRANSISTORS | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon | Siemens |
| BCP56TRANSISTORS | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon | Siemens |
| BCP56,135TRANSISTORS | TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | NXP Semiconductors |
| BCP56E6433TRANSISTORS | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon | Siemens |
● Linear Voltage Regulators
● Low-Side Switches
● Battery-driven Devices
● Power Management
● MOSFET Drivers
● Audio Amplifier
● Medium Power Surface Mount Applications
Package
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Download datasheets and manufacturer documentation for BCP56T1G
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