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BD237: 3MHz,350mW, Pinout and Datasheet

Bipolar (Bjt) Single Transistor, Npn, 80 V, 3 Mhz, 25 W, 2 A, 40 Rohs Compliant: Yes The devices are manufactured in Planar technology with a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD238.

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Apr 20, 2022

Sally Kennan

Transistors, How do they work?

 

Bipolar (Bjt) Single Transistor, Npn, 80 V, 3 Mhz, 25 W, 2 A, 40 Rohs Compliant: Yes

The devices are manufactured in Planar technology with a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD238.

 

BD237

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BD237 Description

The BD237  is manufactured in Planar technology with a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

 

BD237 Internal Schematic Diagram

BD237 Internal Schematic Diagram

BD237 CAD Model

BD237 Symbol

 

 

BD237 Footprint

 

BD237 3D Model

BD237 Absolute Maximum Ratings

BD237 Absolute Maximum Ratings

BD237 Features

• High DC Current Gain

• Epoxy Meets UL 94 V0 @ 0.125 in

• These Devices are Pb−Free and are RoHS Compliant*

Specifications

BD237 Tech Specifications

STMicroelectronics BD237 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BD237.

Product Attribute Attribute Value
Lifecycle StatusACTIVE (Last Updated: 7 months ago)
Factory Lead Time8 Weeks
Contact PlatingTin
MountThrough Hole
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Number of Pins3Pins
Transistor Element MaterialSILICON
Number of Elements1 Element
Collector-Emitter Breakdown Voltage80V
Collector-Emitter Saturation Voltage600mV
hFEMin40
Operating Temperature150°C TJ
PackagingTube
JESD-609 Codee3
Part StatusActive
Product Attribute Attribute Value
Moisture Sensitivity Level (MSL)1 (Unlimited)
Number of Terminations3Terminations
ECCN CodeEAR99
Voltage - Rated DC100V
Max Power Dissipation25W
Current Rating2A
Frequency3MHz
Base Part NumberBD237
Pin Count3
Element ConfigurationSingle
Power Dissipation25W
Case ConnectionISOLATED
Transistor ApplicationSWITCHING
Gain Bandwidth Product3MHz
Polarity/Channel TypeNPN
Transistor TypeNPN
Product Attribute Attribute Value
Collector Emitter Voltage (VCEO)80V
Max Collector Current2A
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 1A 2V
Current - Collector Cutoff (Max)100μA ICBO
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
Transition Frequency3MHz
Collector Base Voltage (VCBO)80V
Emitter Base Voltage (VEBO)5V
VCEsat-Max0.6 V
Height10.8mm
Length7.8mm
Width2.7mm
REACH SVHCNo SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead FreeLead Free
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BD237 Electrical Characteristics

BD237 Electrical Characteristics

BD237 Test circuit

BD237 Test circuit

BD237 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions, and product status are available at: www.st.com. ECOPACK® is an ST trademark.

BD237 Manufacturer

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology, and its products play a key role in enabling today's convergence trends.

 

Datasheet PDF

BD237 Documents

Download datasheets and manufacturer documentation for BD237

Simulation Models
BD237 Spice Model

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