
Trans GP BJT NPN 4V 0.03A 4-Pin(3 Tab) SOT-343 T/R
The BF888H6327XTSA1 is a high-performance bipolar NPN RF transistor.
Trans GP BJT NPN 4V 0.03A 4-Pin(3+Tab) SOT-343 T/R
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Aug 6, 2021
Kent Chaplin

Trans GP BJT NPN 4V 0.03A 4-Pin(3 Tab) SOT-343 T/R
The BF888H6327XTSA1 is a high-performance bipolar NPN RF transistor.


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The BF888H6327XTSA1 is a 4V 0.03A 4 pin high-performance bipolar NPN RF transistor, available in the SOT-343 T/R package.
• High transducer gain of typ. 14 dB @ 25 mA,6 GHz
• Low minimum noise figure of typ. 0.85 dB @ 6GHz
• High output compression of typ. 11 dBm @ 25 mA
• Pb-free (RoHS compliant) package
• For a wide range of non-automotive applications
- 2nd and 3rd LNA stage and mixer stage in LNB
- 5.8 GHz analog/digital cordless phone
- Satellite radio SDARS
- WLAN, WiMAX, UWB
Infineon Technologies BF888H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BF888H6327XTSA1.
Infineon Technologies BF888H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BF888H6327XTSA1.
| Product Attribute | Attribute Value | |
|---|---|---|
| Factory Lead Time | 4 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Package / Case | SOT-343 | |
| Number of Elements | 1 Element | |
| Packaging | Tape & Reel (TR) | |
| Published | 2010 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations |
| Product Attribute | Attribute Value | |
|---|---|---|
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Additional Feature | LOW NOISE | |
| Max Power Dissipation | 160mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Frequency | 47GHz | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PDSO-G4 |
| Product Attribute | Attribute Value | |
|---|---|---|
| Polarity | NPN | |
| Configuration | SINGLE | |
| Power Dissipation | 160mW | |
| Case Connection | EMITTER | |
| Transistor Application | SWITCHING | |
| Collector Emitter Voltage (VCEO) | 4V | |
| Max Collector Current | 30mA | |
| Transition Frequency | 47000MHz | |
| Collector Base Voltage (VCBO) | 13V | |
| Emitter Base Voltage (VEBO) | 1.2V | |
| RoHS Status | ROHS3 Compliant |



On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics. Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, analogue integrated circuits, and discrete semiconductor products.
Download datasheets and manufacturer documentation for Infineon Technologies BF888H6327XTSA1.
Download datasheets and manufacturer documentation for BF888H6327XTSA1
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