Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 0.85A SOT23
BSH103 is an N-channel enhancement mode MOS transistor in a SOT23 SMD package. This post will unlock its datasheet, Pinout, application and more details about BSH103.
BSH103 N-Chanel MOSFET: MOS Transistor, 30V, Datasheet and Pinout
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 0.85A SOT23 BSH103 is an N-channel enhancement mode MOS transistor in a SOT23 SMD package.
136
Dec 11, 2021
Jason Carl
BSH103,235
260000In Stock
Min.: 1 Mult.: 1
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.1854 | $0.19 |
| 10+ | $0.17491 | $1.75 |
| 100+ | $0.16501 | $16.5 |
| 500+ | $0.15567 | $77.84 |
| 1000+ | $0.14685 | $146.85 |
Unit Price:$0.1854
Subtotal: $0.19
Quick Links
BSH103 Pinout
BSH103 CAD Model
BSH103 Symbol
BSH103 Footprint
BSH103 3D Model
BSH103 Description
NXP's BSH103 is a TrenchMOS -based surface mount N channel enhancement mode MOS transistor in the SOT-23 package. This transistor has an extremely low threshold, high switching speed, no secondary breakdown, and a direct CMOS, TTL interface. BSH103 is intended for use in high-frequency applications, as a glue logic bridge between logic blocks or peripherals, in computing, and in battery-powered applications.
BSH103 Feature
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Suitable for use with all 5V logic families
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Suitable for very low gate drive sources
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Drain to source voltage (Vds) of 30V
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Gate to source voltage of ±8V
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Drain current (Id) of 850mA
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Power dissipation (Pd) of 750mW
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Operating junction temperature range from -55 °C to 150 °C
BSH103 Application
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Power Management
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Consumer Electronics
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Portable Devices
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Industrial
BSH103 Alternatives
The alternative for BSH103:
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BSH103,235
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BSH103,215
BSH103 Test Circuit
The following circuit shows the BSH103 test circuit:
BSH103 Test Circuit
Specifications
Nexperia USA Inc. BSH103,235 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSH103,235.
BSH103,235 Tech Specifications
BSH103,235 Tech Specifications
Nexperia USA Inc. BSH103,235 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSH103,235.
| Product Attribute | Attribute Value | |
|---|---|---|
| Factory Lead Time | 4 Weeks | |
| Contact Plating | Tin | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 850mA Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 540mW Ta | |
| Turn Off Delay Time | 20 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 1998 | |
| JESD-609 Code | e3 |
| Product Attribute | Attribute Value | |
|---|---|---|
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.75 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 500mW | |
| Turn On Delay Time | 2.5 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING |
| Product Attribute | Attribute Value | |
|---|---|---|
| Rds On (Max) @ Id, Vgs | 400m Ω @ 500mA, 4.5V | |
| Vgs(th) (Max) @ Id | 400mV @ 1mA (Min) | |
| Input Capacitance (Ciss) (Max) @ Vds | 83pF @ 24V | |
| Gate Charge (Qg) (Max) @ Vgs | 2.1nC @ 4.5V | |
| Rise Time | 3.5ns | |
| Vgs (Max) | ±8V | |
| Fall Time (Typ) | 3.5 ns | |
| Continuous Drain Current (ID) | 850mA | |
| Gate to Source Voltage (Vgs) | 8V | |
| Max Dual Supply Voltage | 30V | |
| Drain Current-Max (Abs) (ID) | 0.85A | |
| Drain-source On Resistance-Max | 0.5Ohm | |
| Drain to Source Breakdown Voltage | 30V | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |
BSH103 Package
BSH103 Manufacturer
Nexperia is a dedicated global leader in Discretes, Logic and MOSFETs devices. This new company became independent at the beginning of 2017. Focused on efficiency, Nexperia produces consistently reliable semiconductor components at a high volume: 85 billion annually. The company’s extensive portfolio meets the stringent standards set by the Automotive industry. And industry-leading small packages, produced in their own manufacturing facilities, combine power and thermal efficiency with best-in-class quality levels. Built on over half a century of expertise, Nexperia has 11,000 employees across Asia, Europe and the U.S. supporting customers globally.
Datasheet PDF
BSH103,235 Documents
BSH103,235 Documents
Download datasheets and manufacturer documentation for BSH103,235
Frequently Asked Questions
What is NXPs BSH103?
TrenchMOS -based surface mount N channel enhancement mode MOS transistor.
What is BSH103 intended for use in high-frequency applications?
Glue logic bridge.
What is basic MOS transistor?
A MOS transistor is primarily a switch for digital devices. ... Ideally, it works as follows: If the voltage at the gate electrode is "on", the transistor is "on", too, and current flow between the source and drain electrodes is possible (almost) without losses.
How does MOS transistor work?
It works by varying the width of a channel along which charge carriers flow (electrons or holes). The charge carriers enter the channel at the source and exit via the drain. The width of the channel is controlled by the voltage on an electrode is called a gate which is located between source and drain.
Is MOS and MOSFET same?
The name "metal–oxide–semiconductor" (MOS) typically refers to a metal gate, oxide insulation, and semiconductor (typically silicon). ... The MOS capacitor is also part of the MOSFET structure.
FAQ
What is NXPs BSH103?
TrenchMOS -based surface mount N channel enhancement mode MOS transistor.
What is BSH103 intended for use in high-frequency applications?
Glue logic bridge.
What is basic MOS transistor?
A MOS transistor is primarily a switch for digital devices. ... Ideally, it works as follows: If the voltage at the gate electrode is "on", the transistor is "on", too, and current flow between the source and drain electrodes is possible (almost) without losses.
How does MOS transistor work?
It works by varying the width of a channel along which charge carriers flow (electrons or holes). The charge carriers enter the channel at the source and exit via the drain. The width of the channel is controlled by the voltage on an electrode is called a gate which is located between source and drain.
Is MOS and MOSFET same?
The name "metal–oxide–semiconductor" (MOS) typically refers to a metal gate, oxide insulation, and semiconductor (typically silicon). ... The MOS capacitor is also part of the MOSFET structure.
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