MOSFET P, 60 V 0.3 A 417 mW SOT-23 | NXP BSH201215 (MOSFET P, 60 V 0.3 A 417 mW SOT-23 Transistors).
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Jan 28, 2022
Winston Ann
MOSFET - Enhancement Type MOSFET Explained (Construction, Working and Characteristics Explained)
MOSFET P, 60 V 0.3 A 417 mW SOT-23 | NXP BSH201215 (MOSFET P, 60 V 0.3 A 417 mW SOT-23 Transistors).
BSH201 is P-channel, enhancement mode, logic level, field-effect power transistor. This article will cover its pinout, datasheet, feature and more details about BSH201.
BSH201,215
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.34993 | $0.35 |
| 10+ | $0.33012 | $3.3 |
| 100+ | $0.31144 | $31.14 |
| 500+ | $0.29381 | $146.91 |
| 1000+ | $0.27718 | $277.18 |
BSH201 is P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery-powered applications and high-speed digital interfacing.
The BSH201 is supplied in the SOT23 subminiature surface mounting package.
• Low threshold voltage VDS = -60V
• Fast switching
• Logic level compatible ID = -0.3 A
• Subminiature surface mount package
Nexperia USA Inc. BSH201,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSH201,215.
Nexperia USA Inc. BSH201,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSH201,215.
| Product Attribute | Attribute Value | |
|---|---|---|
| Factory Lead Time | 6 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 300mA Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 417mW Ta | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 1998 | |
| JESD-609 Code | e3 |
| Product Attribute | Attribute Value | |
|---|---|---|
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| HTS Code | 8541.21.00.95 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE |
| Product Attribute | Attribute Value | |
|---|---|---|
| Power Dissipation | 417mW | |
| FET Type | P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 2.5 Ω @ 160mA, 10V | |
| Vgs(th) (Max) @ Id | 1V @ 1mA (Min) | |
| Input Capacitance (Ciss) (Max) @ Vds | 70pF @ 48V | |
| Gate Charge (Qg) (Max) @ Vgs | 3nC @ 10V | |
| Drain to Source Voltage (Vdss) | 60V | |
| Vgs (Max) | ±20V | |
| Continuous Drain Current (ID) | -300mA | |
| DS Breakdown Voltage-Min | 60V | |
| RoHS Status | ROHS3 Compliant |
BSH201 Package
Nexperia is a dedicated global leader in Discretes, Logic and MOSFETs devices. This new company became independent at the beginning of 2017. Focused on efficiency, Nexperia produces consistently reliable semiconductor components at a high volume: 85 billion annually. The company’s extensive portfolio meets the stringent standards set by the Automotive industry. And industry-leading small packages, produced in their own manufacturing facilities, combine power and thermal efficiency with best-in-class quality levels. Built on over half a century of expertise, Nexperia has 11,000 employees across Asia, Europe and the U.S. supporting customers globally.
Download datasheets and manufacturer documentation for BSH201,215
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