MOSFET N-CH 100V 170MA SOT-23
The BSS123 is an N-Channel logic level enhancement mode field-effect transistor. This article will unlock more details about BSS123.
BSS123 N-Channel MOSFET: Datasheet, Alternatives, Circuit
MOSFET N-CH 100V 170MA SOT-23 The BSS123 is an N-Channel logic level enhancement mode field-effect transistor. This article will unlock more details about BSS123.
2039
Sep 14, 2021
Angelo O'Casey
BSS123
87000In Stock
Min.: 1 Mult.: 1
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.43713 | $0.44 |
| 10+ | $0.41239 | $4.12 |
| 100+ | $0.38905 | $38.91 |
| 500+ | $0.36703 | $183.52 |
| 1000+ | $0.34625 | $346.25 |
Unit Price:$0.43713
Subtotal: $0.44
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BSS123 Pinout
BSS123 Pinout
| Pin Number | Pin Name | Description |
| 1 | Source | Current flows out through Source |
| 2 | Gate | Controls the biasing of the MOSFET |
| 3 | Drain | Current flows in through Drain |
Pin Description
BSS123 CAD Model
BSS123 Symbol
BSS123 Footprint
BSS123 3D Model
BSS123 Description
The BSS123 is a compact Logic Level N-Channel MOSFET. The MOSFET has a very low threshold voltage of 01.7V and hence can be used with any low voltage application circuits and for level shifting applications. Adding to this the Mosfet also has low on-state resistance and low input capacitance which makes it efficient in switching circuits since it requires only less gate current even when switching at high speeds.
Specifications
ON Semiconductor BSS123 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BSS123.
BSS123 Tech Specifications
BSS123 Tech Specifications
ON Semiconductor BSS123 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BSS123.
| Product Attribute | Attribute Value | |
|---|---|---|
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) | |
| Factory Lead Time | 8 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Pins | 3Pins | |
| Supplier Device Package | SOT-23-3 | |
| Current - Continuous Drain (Id) @ 25℃ | 170mA Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 360mW Ta | |
| Turn Off Delay Time | 17 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2003 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Resistance | 6Ohm |
| Product Attribute | Attribute Value | |
|---|---|---|
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | 100V | |
| Current Rating | 170mA | |
| Base Part Number | BSS123 | |
| Number of Channels | 1Channel | |
| Voltage | 100V | |
| Element Configuration | Single | |
| Current | 15A | |
| Power Dissipation | 360mW | |
| Turn On Delay Time | 1.7 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 170mA, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 73pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 10V | |
| Rise Time | 9ns | |
| Drain to Source Voltage (Vdss) | 100V | |
| Vgs (Max) | ±20V |
| Product Attribute | Attribute Value | |
|---|---|---|
| Fall Time (Typ) | 9 ns | |
| Continuous Drain Current (ID) | 170mA | |
| Threshold Voltage | 1.7V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 100V | |
| Dual Supply Voltage | 100V | |
| Input Capacitance | 73pF | |
| Max Junction Temperature (Tj) | 150°C | |
| Drain to Source Resistance | 1.2Ohm | |
| Rds On Max | 6 Ω | |
| Nominal Vgs | 1.7 V | |
| Height | 1.11mm | |
| Length | 2.92mm | |
| Width | 1.3mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
BSS123 Features
· 0.17 A, 100 V. RDS(ON) = 6W @ VGS = 10 V RDS(ON) = 10W @ VGS = 4.5 V
· High density cell design for extremely low RDS(ON)
· Rugged and Reliable
· Compact industry standard SOT-23 surface mount package
BSS123 Application
-
Low current and Low Voltage switching applications
-
Logic Level Shifters
-
DC-DC converts
-
eMobility applications
-
An application where low on-state resistance is required.
-
Power management applications
BSS123 Circuit
BSS123 Equivalents
Equivalent for BSS123: BSS84, FDN358P.
BSS123 Alternatives
| Parts | Description | Manufacturer |
| 2SK1581-T1B TRANSISTORS | Small Signal Field-Effect Transistor, 0.2A I(D), 16V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIMOLD, SC-59, 3 PIN | NEC Electronics Group |
| BSS123TCTRANSISTORS | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | Diodes Incorporated |
| VN1706L TRANSISTORS | Small Signal Field-Effect Transistor, 0.22A I(D), 170V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Supertex Inc |
| MFE930 TRANSISTORS | Small Signal Field-Effect Transistor, 2A I(D), 35V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD | Motorola Semiconductor Products |
| VP2020L TRANSISTORS | Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-92, 3 PIN | Vishay Siliconix |
| BSR58L TRANSISTORS | TRANSISTOR,JFET,N-CHANNEL,40V V(BR)DSS,80MA I(DSS),SOT-23 | Freescale Semiconductor |
| SXVVN10KN9 TRANSISTORS | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-52 | Supertex Inc |
| ND2012L TRANSISTORS | Small Signal Field-Effect Transistor, 0.16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA | Vishay Siliconix |
| ND2020L-1 TRANSISTORS | Small Signal Field-Effect Transistor, 0.132A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA | Vishay Siliconix |
| VN0610LLP006 TRANSISTORS | Small Signal Field-Effect Transistor, 0.31A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Supertex Inc |
BSS123 Package
BSS123 Manufacturer
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Datasheet PDF
BSS123 Documents
BSS123 Documents
Download datasheets and manufacturer documentation for BSS123
PCN Assembly/Origin
Mult Devices 27/Sep/2017
Environmental Information
Material Declaration BSS123
Frequently Asked Questions
What is BSS123?
The BSS123 is a compact Logic Level N-Channel MOSFET. The MOSFET has a very low threshold voltage of 01.7V and hence can be used with any low voltage application circuits and for level shifting applications. Adding to this the Mosfet also has low on-state resistance and low input capacitance which makes it efficient in switching circuits since it requires only less gate current even when switching at high speeds.
What is the equivalent for BSS123?
The Equivalent BSS123 is BSS84, FDN358P.
What package does the BSS123 come?
It comes with a SOT23 SMD package.
FAQ
What is BSS123?
The BSS123 is a compact Logic Level N-Channel MOSFET. The MOSFET has a very low threshold voltage of 01.7V and hence can be used with any low voltage application circuits and for level shifting applications. Adding to this the Mosfet also has low on-state resistance and low input capacitance which makes it efficient in switching circuits since it requires only less gate current even when switching at high speeds.
What is the equivalent for BSS123?
The Equivalent BSS123 is BSS84, FDN358P.
What package does the BSS123 come?
It comes with a SOT23 SMD package.
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