MOSFET P-CH 50V 130MA SOT23-3 The BSS84 can be used with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A.
510
Sep 18, 2021
Maggie Judson
KiCad tutorial 7 : Simulation of current source circuit using a power MOSFET BSS84
MOSFET P-CH 50V 130MA SOT23-3
The BSS84 can be used with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This article mainly introduces features, pinout, datasheet and other detailed information about Diodes Incorporated BSS84.
BSS84-7-F
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.23041 | $0.23 |
| 10+ | $0.21737 | $2.17 |
| 100+ | $0.20507 | $20.51 |
| 500+ | $0.19346 | $96.73 |
| 1000+ | $0.18251 | $182.51 |
The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high-density process minimizes on-state resistance and provides rugged and reliable performance and fast switching.
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3D Model
● Low On-Resistance
● Low Gate Threshold Voltage
● Low Input Capacitance
● Fast Switching Speed
● Low Input/Output Leakage
● Totally Lead-Free & Fully RoHS Compliant
● Halogen And Antimony Free. “Green” Device
● The BSS84Q Is Suitable For Automotive Applications Requiring Specific Change Control; This Part Is AEC-Q101 Qualified, PPAP Capable, And Manufactured In IATF 16949 Certified Facilities.
● -0.13 A, -50 V, RDS(ON) = 10 Ω At VGS = -5 V §
● Voltage-Controlled P-Channel Small-Signal Switch §
● High-Density Cell Design For Low RDS(ON) §
● High Saturation Current
Diodes Incorporated BSS84-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS84-7-F.
Diodes Incorporated BSS84-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS84-7-F.
| Product Attribute | Attribute Value | |
|---|---|---|
| Factory Lead Time | 14 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Pins | 3Pins | |
| Weight | 7.994566mg | |
| Transistor Element Material | SILICON | |
| Manufacturer Package Identifier | BSS84-7-F | |
| Current - Continuous Drain (Id) @ 25℃ | 130mA Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 5V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 300mW Ta | |
| Turn Off Delay Time | 18 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2008 | |
| JESD-609 Code | e3 |
| Product Attribute | Attribute Value | |
|---|---|---|
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 10Ohm | |
| Additional Feature | HIGH RELIABILITY, LOW THRESHOLD | |
| Voltage - Rated DC | -50V | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | -130mA | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Pin Count | 3 | |
| Qualification Status | Not Qualified | |
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE |
| Product Attribute | Attribute Value | |
|---|---|---|
| Power Dissipation | 300mW | |
| Turn On Delay Time | 10 ns | |
| FET Type | P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 10 Ω @ 100mA, 5V | |
| Vgs(th) (Max) @ Id | 2V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 45pF @ 25V | |
| Drain to Source Voltage (Vdss) | 50V | |
| Vgs (Max) | ±20V | |
| Continuous Drain Current (ID) | 130mA | |
| Threshold Voltage | -800mV | |
| Gate to Source Voltage (Vgs) | 20V | |
| Height | 1mm | |
| Length | 2.9mm | |
| Width | 1.3mm | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Functional Block Diagram
| Part Number | Description | Manufacturer |
| BSS84LT1TRANSISTORS | TRANSISTOR,MOSFET,P-CHANNEL,50V V(BR)DSS,100MA I(D),TO-236AB | Freescale Semiconductor |
| BSS84,215TRANSISTORS | BSS84 - P-channel vertical D-MOS logic level FET@en-us TO-236 3-Pin | Nexperia |
| BSS84/DGTRANSISTORS | Small Signal Field-Effect Transistor | Nexperia |
| BSS84LT3TRANSISTORS | Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, CASE 318-08, 3 PIN | Motorola Semiconductor Products |
| BSS84TATRANSISTORS | Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Zetex / Diodes Inc |
| BSS84-TAPE-7TRANSISTORS | TRANSISTOR 130 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal | NXP Semiconductors |
| BSS84-TAPE-13TRANSISTORS | TRANSISTOR 130 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SMD, 3 PIN, FET General Purpose Small Signal | NXP Semiconductors |
| SBSS84LT1TRANSISTORS | 130mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, CASE 318-08, TO-236, 3 PIN | onsemi |
| BSS84TRL13TRANSISTORS | TRANSISTOR 130 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal | NXP Semiconductors |
| BSS84/T1TRANSISTORS | 130mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3 | NXP Semiconductors |
● General Purpose Interfacing Switch
● Power Management Functions
● Analog Switch
Diodes Incorporated is devoted to being the leading provider for large-volume and high-growing markets. Providing product designers with a broad range of discrete semiconductor components that are renowned for their quality, high performance and optimized packaging.
With cutting-edge products of package technology, analog, discrete and mixed-signal products, Diodes Incorporated is capable to provide high-quality semiconductor products to meet the customers’ needs from walks of communications, computing, consumer electronics, automotive and industrial markets. Their product lines cover a wide range of application solutions together with 25 operations around the world which serve with the examination, engineering, manufacturing and customer service.
Download datasheets and manufacturer documentation for Diodes Incorporated BSS84-7-F.
Download datasheets and manufacturer documentation for BSS84-7-F
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