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CSD18543Q3A Power MOSFET: Features, Pinout, and Datasheet

The CSD18543Q3A is a 60-V N-Channel NexFET? Power MOSFET. This article mainly introduces Features, Pinout, Datasheet and other detailed information about Texas Instruments CSD18543Q3A.

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Apr 21, 2022

Rae Paul

Power MOSFET working, structure and characteristics in Power Electronics by Engineering Funda

 

The CSD18543Q3A is a 60-V N-Channel NexFET™ Power MOSFET. This article mainly introduces Features, Pinout, Datasheet and other detailed information about Texas Instruments CSD18543Q3A.

 

CSD18543Q3A

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CSD18543Q3A Description

The CSD18543Q3A is a 60-V, 8.1-m, SON 3.3-mm 3.3-mm NexFETTM power MOSFET  designed to reduce losses in power conversion applications.

CSD18543Q3A Pinout

The following figure is CSD18543Q3A Pinout.

Pinout

CSD18543Q3A CAD Model

The followings are CSD18543Q3A CAD Model.

Symbol

Footprint

3D Model

CSD18543Q3A Features

• Ultra-Low Qg and  Qgd 

• Low RDS(on)

• Low-Thermal Resistance

• Avalanche Rated

• Lead Free

•  RoHS Compliant

• Halogen Free

• SON 3.3-mm × 3.3-mm Plastic Package

Specifications

CSD18543Q3A Tech Specifications

Texas Instruments CSD18543Q3A technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD18543Q3A.

Product Attribute Attribute Value
Lifecycle StatusACTIVE (Last Updated: 4 days ago)
Factory Lead Time12 Weeks
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Surface MountYES
Number of Pins8Pins
Drive Voltage (Max Rds On, Min Rds On)4.5V 10V
Number of Elements1 Element
Turn Off Delay Time8 ns
PackagingTape & Reel (TR)
JESD-609 Codee3
Pbfree Codeyes
Part StatusActive
Moisture Sensitivity Level (MSL)1 (Unlimited)
Number of Terminations5Terminations
Product Attribute Attribute Value
ECCN CodeEAR99
Terminal FinishMatte Tin (Sn)
Max Operating Temperature150°C
Min Operating Temperature-55°C
Additional FeatureAVALANCHE RATED
Terminal PositionDUAL
Terminal FormFLAT
Base Part NumberCSD18543
Number of Channels1Channel
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation66W
Case ConnectionDRAIN
Turn On Delay Time9 ns
Transistor ApplicationSWITCHING
Product Attribute Attribute Value
Drain to Source Voltage (Vdss)60V
Vgs (Max)±20V
Polarity/Channel TypeN-CHANNEL
Continuous Drain Current (ID)35A
Gate to Source Voltage (Vgs)20V
Avalanche Energy Rating (Eas)55 mJ
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)150°C
Drain to Source Resistance8.1mOhm
Feedback Cap-Max (Crss)6.2 pF
Height900μm
Length3.3mm
Width3.3mm
Thickness800μm
RoHS StatusROHS3 Compliant
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CSD18543Q3A Alternatives

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NTMFS5844NLT3GTRANSISTORS 11A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, CASE 488AA-01, DFN5, SOP-8 onsemi
TSM120N06LCPROGTRANSISTORS Power Field-Effect Transistor, 10A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 Taiwan Semiconductor
NVTFS5C673NLWFTAGTRANSISTORS Single N-Channel Power MOSFET 60V, 50A, 9.8mΩ 1500 / Tape & Reel. Pb-Free, Wettable Flanks, 1500-REEL onsemi
NVTFS5820NLWFTWGTRANSISTORS Power MOSFET 60V, 29A, 11.5 mOhm, Single N-Channel, u8FL, Logic Level., WDFN8 3.3x3.3, 0.65P, 5000-REEL onsemi
NVTFS5820NLT1GTRANSISTORS 11A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 511AB-01, WDFN-8 onsemi
NTMFS5844NLT1GTRANSISTORS Single N-Channel Power MOSFET 60V, 60A, 12mΩ Power MOSFET 60V 60A 12mOhm Single N-Channel SO-8FL, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL onsemi
NVTFS5C673NLTAGTRANSISTORS Single N-Channel Power MOSFET 60V, 50A, 9.8mΩ 1500 / Tape & Reel, 1500-REEL onsemi
NVTFS5820NLT3GTRANSISTORS 11A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 511AB-01, WDFN-8 onsemi
NVTFS5820NLTWGTRANSISTORS Power MOSFET 60V, 29A, 11.5 mOhm, Single N-Channel, u8FL, Logic Level., WDFN8 3.3x3.3, 0.65P, 5000-REEL onsemi

CSD18543Q3A Applications

• Solid State Relay Switch

• DC-DC Conversion

• Secondary Side Synchronous Rectifier

• Isolated Converter Primary Side Switch

• Motor Control

CSD18543Q3A Package

The following is CSD18543Q3A Package.

Package

CSD18543Q3A Manufacturer

As a global semiconductor company operating in 35 countries, Texas Instruments (TI) is first and foremost a reflection of its people. From the TIer who unveiled the first working integrated circuit in 1958 to the more than 30,000 TIers around the world today who design, manufacture and sell analog and embedded processing chips, we are problem-solvers collaborating to change the world through technology.

Frequently Asked Questions

What is a power MOSFET used for?
A type of metal oxide semiconductor field-effect transistor (MOSFET) is used to switch large amounts of current. Power MOSFETs use a vertical structure with source and drain terminals at opposite sides of the chip. The vertical orientation eliminates crowding at the gate and offers larger channel widths.
What is the difference between MOSFET and power MOSFET?
Normal MOSFET handles low power but power MOSFET can handle much higher power. Power MOSFET is used in Power Electronics.
What are the advantages of power MOSFET?
Ability to scale down in size. It has low power consumption to allow more components per chip surface area. MOSFET has no gate diode. It read directly with a very thin active area. They have high drain resistance due to the lower resistance of a channel.
FAQ
What is a power MOSFET used for?
A type of metal oxide semiconductor field-effect transistor (MOSFET) is used to switch large amounts of current. Power MOSFETs use a vertical structure with source and drain terminals at opposite sides of the chip. The vertical orientation eliminates crowding at the gate and offers larger channel widths.
What is the difference between MOSFET and power MOSFET?
Normal MOSFET handles low power but power MOSFET can handle much higher power. Power MOSFET is used in Power Electronics.
What are the advantages of power MOSFET?
Ability to scale down in size. It has low power consumption to allow more components per chip surface area. MOSFET has no gate diode. It read directly with a very thin active area. They have high drain resistance due to the lower resistance of a channel.

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