FGA25N120 IGBT: Application, Datasheet, Pinout

FGA25N120 Pinout

Pin Description

FGA25N120 Symbol

FGA25N120 Footprint

FGA25N120 3D Model

The FGA25N120 is a high voltage and high current IGBT with NPT Trench Technology. The IGBT can switch 1200V with a current rating of up to 50A. It also has a very low gate saturation voltage of 2V allowing it to be used in low voltage driver side designs.

ON Semiconductor FGA25N120FTD technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor FGA25N120FTD.

• High Voltage High Current IGBT with a low saturation voltage

• Collector-Emitter Voltage (VCE): 1200V

• Collector Current (IC): 50A @25°C

• The Minimum Gate threshold voltage (VGE) is 3.5V

• The maximum Gate threshold voltage (VGE) is 7.5V

• Gate-Emitter Voltage is (VGE) is ±20V (max)

• Rise time and the fall time is about 60ns and 100ns respectively.

• Available in To-3P package

• High Voltage, high current switching device

• Induction Heating

• Microwave Oven

• Large Solenoids

• Tesla Coils

• Converters or Inverter circuits

The alternate for FGA25N120:

FGA15N120, TA49123, FGA180N33.

The FGA25N120 is a high voltage, high current IGBT that can switch high voltages up to 1200V while delivering a current of 50A at 25°C. It can also withstand strong pulse currents of up to 90A, making it ideal for applications involving high voltage and switching current spikes.

 Because the IGBT employs Non-Punch Through (NPT) Technology, it has a low switching loss and low saturation voltage, allowing it to be employed in low voltage switching driver designs with a high switching efficiency. In comparison to MOSFETs, the FGA25N, like all IGBTs, has a slow switching speed and a significant voltage drop across the collector and emitter. If your design calls for a high-efficiency, fast-switching device, MOSFETs should be chosen over IGBTs. In designs with high switching voltage and current, IGBTs are preferred.

The pin-out of an IGBT shows that it is a hybrid of MOSFET and BJT. On the input side, it's comparable to a MOSFET, and on the output side, it's similar to a BJT, with Collector and Emitter. This means that an IGBT is simply a MOSFET with a BJT on the output side to take advantage of the advantages of both a MOSFET and a BJT.

In the same way that the gate pin of a MOSFET must be triggered with the minimum gate voltage to close the switch, the gate pin of an IGBT must be triggered with the minimum gate voltage to close the switch. The needed gate trigger voltage can be estimated using the collector-emitter voltage and collector current that must be switched, using the graph in the datasheet shown below.

How to use FGA25N120

Like a MOSFET, once the gate is triggered, the IGBT will stay on even if the trigger voltage is withdrawn. This is because the input gate pin of an IGBT has a gate capacitance. To switch off the device, just connect the gate pin of the IGBT to the ground to discharge the gate capacitance. As a result, the Gate pin of an IGBT is usually linked to the ground through a 10k pull-down resistor or a gate driver IC such as the IR2104.

When using IGBTs in switching circuits, it's important to avoid using them in high-frequency designs since the IGBT's collector-emitter voltage drop (switching loss) increases as the switching frequency rises. In the datasheet, you'll find a graph for the same.

FGA25N120 Package

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Download datasheets and manufacturer documentation for ON Semiconductor FGA25N120FTD.