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FQP27P06 QFET MOSFET: Datasheet, Pinout, Test Circuit

MOSFET P-CH 60V 27A TO-220 This article will introduce datasheet, pinout, test circuit and more details about FQP27P06, a through-hole, -60V P channel QFET MOSFET in TO-220 package. And, Huge range of Semiconductors, Capacitors, Resistors and ICs in stock. Welcome RFQ!

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Sep 17, 2021

Natividad Ralph

MOSFET P-CH 60V 27A TO-220

This article will introduce datasheet, pinout, test circuit and more details about FQP27P06, a through-hole, -60V P channel QFET MOSFET in TO-220 package. And, Huge range of Semiconductors, Capacitors, Resistors and ICs in stock. Welcome RFQ!

FQP27P06

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FQP27P06 Pinout

FQP27P06 Description

The FQP27P06 P-Channel enhancement mode power MOSFET is produced using ON Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.

 

FQP27P06 CAD Model

FQP27P06 Symbol

 

FQP27P06 Footprint

 

 

FQP27P06 3D Model

Specifications

ON Semiconductor FQP27P06 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor FQP27P06.

FQP27P06 Tech Specifications

ON Semiconductor FQP27P06 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor FQP27P06.

Product Attribute Attribute Value
Lifecycle StatusACTIVE (Last Updated: 2 days ago)
Factory Lead Time6 Weeks
Contact PlatingTin
MountThrough Hole
Mounting TypeThrough Hole
Package / CaseTO-220-3
Number of Pins3Pins
Weight1.8g
Transistor Element MaterialSILICON
Current - Continuous Drain (Id) @ 25℃27A Tc
Drive Voltage (Max Rds On, Min Rds On)10V
Number of Elements1 Element
Power Dissipation (Max)120W Tc
Turn Off Delay Time30 ns
Operating Temperature-55°C~175°C TJ
PackagingTube
SeriesQFET®
Published1999
JESD-609 Codee3
Product Attribute Attribute Value
Pbfree Codeyes
Part StatusActive
Moisture Sensitivity Level (MSL)1 (Unlimited)
Number of Terminations3Terminations
ECCN CodeEAR99
Resistance70mOhm
Voltage - Rated DC-60V
Current Rating-27A
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation120W
Turn On Delay Time18 ns
FET TypeP-Channel
Transistor ApplicationSWITCHING
Rds On (Max) @ Id, Vgs70m Ω @ 13.5A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds1400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
Rise Time185ns
Product Attribute Attribute Value
Drain to Source Voltage (Vdss)60V
Vgs (Max)±25V
Fall Time (Typ)90 ns
Continuous Drain Current (ID)-27A
Threshold Voltage-4V
JEDEC-95 CodeTO-220AB
Gate to Source Voltage (Vgs)25V
Drain to Source Breakdown Voltage-60V
Dual Supply Voltage-60V
Avalanche Energy Rating (Eas)560 mJ
Nominal Vgs-4 V
Height6.35mm
Length6.35mm
Width9.9mm
REACH SVHCNo SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead FreeLead Free
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FQP27P06 Feature

  • -27A, -60V, RDS(on) = 0.07Ω @VGS = -10 V

  • Low gate charge ( typical 33 nC)

  • Low Crss ( typical 120 pF)

  • Fast switching

  • 100% avalanche tested

  • Improved dv/dt capability

  • 175°C maximum junction temperature rating

FQP27P06 Equivalents

The Equivalents for FQP27P06: FQP10N20, FQP10N20C, FQP10N50CF, FQP10N60, FQP10N60C.

FQP27P06 Applications

  • Other Audio

  • Video

 

QP27P06 Test Circuit

The test circuit for FQ27P06 is shown below:

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

Peak Diode Recovery dv /dt Test Circuit & Waveforms

FQP27P06 Package

FQP27P06 Package

 

FQP27P06 Manufacturer

On Semiconductor (Nasdaq: ON) is a manufacturer engaging itself in reducing energy use. It features a comprehensive portfolio of power, signal management, and logic, custom solutions that are energy efficient.

 

Datasheet PDF

Download datasheets and manufacturer documentation for ON Semiconductor FQP27P06.

FQP27P06 Documents

Download datasheets and manufacturer documentation for FQP27P06

Frequently Asked Questions

What is FQP27P06?
The FQP27P06 P-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
Why does the MOSFET need to be high current?
Gate-Source Capacitance – There is also a capacitance on the Gate-Source pins which prevents the MOSFET from switching states quickly. In order to quickly change the voltage on internal capacitance, the MOSFET driver needs to be a high current. It needs to actively charge (source) and discharge (sink) the capacitor too (for N channel).
How is a p channel MOSFET connected to ground?
P channel MOSFET. N channel – For an N channel MOSFET, the source is connected to the ground. If we want to let current flow, we can easily raise the voltage on the gate allowing current to flow. If no current is to flow, the gate pin should be grounded.
FAQ
What is FQP27P06?
The FQP27P06 P-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
Why does the MOSFET need to be high current?
Gate-Source Capacitance – There is also a capacitance on the Gate-Source pins which prevents the MOSFET from switching states quickly. In order to quickly change the voltage on internal capacitance, the MOSFET driver needs to be a high current. It needs to actively charge (source) and discharge (sink) the capacitor too (for N channel).
How is a p channel MOSFET connected to ground?
P channel MOSFET. N channel – For an N channel MOSFET, the source is connected to the ground. If we want to let current flow, we can easily raise the voltage on the gate allowing current to flow. If no current is to flow, the gate pin should be grounded.

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