IRF1010E N-Channel MOSFET: Datasheet, Pinout, Equivalent

IRF1010E Pinout

IRF1010E Symbol

3D Model

IRF1010E 3D Model

The IRF1010E is an N-Channel Enhancement MOSFET that is optimized for high-speed switching. It also has minimal resistance to turning on. The IRF1010E, like any other MOSFET, is a voltage-controlled device, with the GATE voltage determining the MOSFET state.

There are many reasons for using IRF1010E, here are a few:

1. When a high-speed SWITCHING device for MEDIUM POWER LOADS is required. Because the IRF1010E is intended specifically for high-speed switching of medium-power loads, it is quite common in such sectors;

2. When you need a switching device with a low drop. The MOSFET has a very low turn ON resistance, which results in a very low drop during the ON condition, which is required in some applications;

3. MOSFET power loss is reduced when the drop is low. The system's efficiency will improve with less power loss. As a result, MOSFETs are favoured for applications requiring great efficiency.

IRF1010E MOSFET can be used like any other power MOSFETs, so let us consider an application circuit for IRF1010E as shown below.

IRF1010E Application Circuit

The IRF1010E is used as a simple switching device in the design above. A tiny motor serves as the LOAD in this circuit. CONTROL UNIT (NOT MICROCONTROLLER) provides the TRIGGER for turning on the MOSFET. MICROCONTROLLER cannot offer voltages higher than +5V. The SOURCE has a solid foundation. The power source is a +12V battery in this case.

CONTROL UNIT trigger voltage = V1

GATE voltage = V2

To provide adequate voltage at GATE, the resistors R1 and R2 form a voltage divider circuit. As a result, they are chosen based on the trigger voltage (V1) of the CONTROL UNIT and the MOSFET GATE threshold voltage.

Consider the CONTROL UNIT, which generates voltage pulses of +12V. A GATE voltage of 10V is also required to totally switch on the MOSFET IRF1010E.

So V1 =+12V and V2 = +10V

We can choose R1 and R2 as,

Any configuration of the above table will construct a voltage divider circuit that will give accurate +10V at the MOSFET GATE. The current draw from the MOSFET is small, therefore this resistor arrangement can be chosen without it. For most applications, these resistances could be chosen roughly.

Under normal circumstances, the MOSFET in the circuit above will be turned off because there is no GATE voltage. When the MOSFET is turned off, the entire VCC appears across it. The DRAIN current will be 0 in this situation. The MOTOR will sit idle since the DRAIN current is zero.

There will be GATE voltage when the CONTROL UNIT produces voltage pulses. The MOSFET is turned ON when the GATE voltage is present. There will be DRAIN current flowing through the MOTOR as a result of this. The MOTOR stars rotate when the current flows. The MOTOR will continue to rotate until the GATE voltage is reached.

When the CONTROL UNIT output is set to LOW, the GATE voltage is set to LOW as well. When the GATE voltage falls below the threshold voltage, the MOSFET is turned off. The DRAIN current likewise becomes ZERO in the OFF state, putting the MOTOR to a complete stop.

The MOSFET is employed as a switching device in the above scenario, with the control unit providing the trigger. As a result, the IRF1010E can be used as a switching device in any application. The circuit shown above is a rudimentary testing circuit, not a real-world application. HEAT SINK, FLYBACK DIODE, and other essential arrangements must be present in the application circuit.

Advanced Process Technology

Ultra Low On-Resistance 

Dynamic dv/dt Rating 

175°C Operating Temperature 

Fast Switching 

Fully Avalanche Rated 

Lead-Free

• Basically any switching applications

• speed control units

• Lighting systems

• PWM applications

• Relay drivers

• Switch-mode power supply

The equivalent for IRF1010E:

• IRF1407

• IRFB4110

• IRFB4110G

• IRFB4115

• IRFB4310Z

• IRFB4310ZG

• IRFB4410

IRF1010E Package

On April 1, 1999, Siemens Semiconductors officially changed its name to Infineon Technologies. Infineon is a dynamic and flexible company. Success in the highly competitive and ever-changing microelectronics world is our constant goal. As the world's leading designer, manufacturer and supplier, Infineon has a wide range of products used in various microelectronics applications. Our product portfolio includes not only logic products, including digital, mixed-signal and analogue integrated circuits but also discrete semiconductor products.