Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 202A TO-220AB
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Oct 27, 2021
Elaine Bessie
How To Make Simple Inverter 12V to 220V IRF1404 , Step by step
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 202A TO-220AB
IRF1404 is an N channel MOSFET manufactured in the TO-220AB package. This post will show you more details about IRF1404. there is a huge range of Semiconductors, Capacitors, Resistors and ICs in stock. Welcome RFQ.
IRF1404PBF
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.76099 | $2.76 |
| 10+ | $2.60471 | $26.05 |
| 100+ | $2.45727 | $245.73 |
| 500+ | $2.31818 | $1159.09 |
| 1000+ | $2.18697 | $2186.97 |
IRF1404 Pinout
Footprint
IRF1404 Footprint
The N channel MOSFET RF1404 is packaged in a TO-220AB package. The transistor has excellent processing technology, high switching speed, and extremely low resistance, among other qualities. These qualities boost the device's stability and durability, allowing it to be used in a wide range of applications. In continuous load driving, the device can deliver up to 162A, and in pulse mode, it can produce up to 650A. Aside from that, because the transistor's maximum power dissipation is up to 200W, it can be utilized as an audio amplifier and an audio amplifier stage.
On April 1, 1999, Siemens Semiconductors officially changed its name to Infineon Technologies. Infineon is a dynamic and flexible company. Success in the highly competitive and ever-changing microelectronics world is our constant goal. As the world's leading designer, manufacturer and supplier, Infineon has a wide range of products used in various microelectronics applications. Our product portfolio includes not only logic products, including digital, mixed-signal and analog integrated circuits, but also discrete semiconductor products.
Advanced Process Technology
Ultra-Low On-Resistance Dynamic DV/DT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
DC to DC converters
Power supplies
Solar power supplies
Battery Chargers
Applications that require fast switching
Uninterrupted power supplies
Battery management system applications
Motor Driver Circuits
IRF2804
IRFB3004
IRFB3077
IRFB3077
IRFB3206
IRFB3004
IRFB3006
IRFB3006G
IRFB3004G
IRFB3077
IRF1404 MOSFETs can be found in inverters, UPSs, and power supplies, as well as in applications requiring high-speed switching and general-purpose applications that fall within its specifications. Aside from that, it can be utilized to construct high-power audio amplifiers.
IRF1404 Test Circuit
IRF1404-For N-channel HEXFET® Power MOSFETs
We recommend using IRF1404 MOSFET at least 20% below its maximum ratings for long-term performance. Because the maximum continuous drain current is 162A, do not drive loads above 129A. Because the maximum drain to source voltage is 40V, do not drive loads that are higher than 32V. Use a suitable heatsink with the transistor, and store and operate the device at temperatures between -55 and +175 ℃ at all times.
Infineon Technologies IRF1404PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1404PBF.
| Product Attribute | Attribute Value | |
|---|---|---|
| Factory Lead Time | 12 Weeks | |
| Contact Plating | Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 202A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 333W Tc | |
| Turn Off Delay Time | 46 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Series | HEXFET® | |
| Published | 2003 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Termination | Through Hole |
| Product Attribute | Attribute Value | |
|---|---|---|
| ECCN Code | EAR99 | |
| Resistance | 4mOhm | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Voltage - Rated DC | 40V | |
| Current Rating | 162A | |
| Lead Pitch | 2.54mm | |
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 333W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 17 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 4m Ω @ 121A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 5669pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 196nC @ 10V | |
| Rise Time | 190ns | |
| Vgs (Max) | ±20V |
| Product Attribute | Attribute Value | |
|---|---|---|
| Fall Time (Typ) | 33 ns | |
| Continuous Drain Current (ID) | 202A | |
| Threshold Voltage | 4V | |
| JEDEC-95 Code | TO-220AB | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 75A | |
| Drain to Source Breakdown Voltage | 40V | |
| Pulsed Drain Current-Max (IDM) | 808A | |
| Dual Supply Voltage | 40V | |
| Avalanche Energy Rating (Eas) | 620 mJ | |
| Recovery Time | 117 ns | |
| Max Junction Temperature (Tj) | 175°C | |
| Nominal Vgs | 4 V | |
| Height | 19.8mm | |
| Length | 10.668mm | |
| Width | 4.826mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
IRF1404 Package
Download datasheets and manufacturer documentation for IRF1404PBF
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