MOSFET N-CH 55V 169A TO-220AB Hello everyone, I am Rose. Today I will introduce IRF1405 to you. IRF1405 is a TO-220 N-channel MOSFET, specially designed for automotive applications. This article mainly introduces pinout, price, datasheet, and other detailed information about Infineon Technologieses IRF1405.
140
Sep 4, 2021
Astrid Juliana
MOSFET N-CH 55V 169A TO-220AB
Hello everyone, I am Rose. Today I will introduce IRF1405 to you. IRF1405 is a TO-220 N-channel MOSFET, specially designed for automotive applications. This article mainly introduces pinout, price, datasheet, and other detailed information about Infineon Technologieses IRF1405.
IRF1405PBF
IRF1405 is a TO-220 N-channel MOSFET, specially designed for automotive applications. This MOSFET achieves extremely low-ON resistance per silicon area. The power MOSFET IRF1405 is compatible at 175˚C operating junction temperature.
IRF1405 has advanced features like fast switching speed and improved repetitive avalanche rating. These advantages make IRF1405 an extremely efficient and reliable device in automotive applications and other variety of applications.
| Pin Number | Pin Name | Pin Description |
| 1 | Gate (G) | Controls the biasing of the MOSFET |
| 2 | Drain (D) | Current flows in through the Drain |
| 3 | Source (S) | Current flows out through Source at leaves MOSFET |
Symbol
Footprint
3D Model
-Advanced Process Technology
-Ultra-Low On-Resistance
-Dynamic DV/DT Rating [peak diode recovery DV/DT = 5 V/ns (max)]
-175°C Operating Temperature
-Fast Switching
-Repetitive Avalanche Allowed up to Tjmax
-Lead-Free
Infineon Technologies IRF1405PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1405PBF.
Infineon Technologies IRF1405PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1405PBF.
| Product Attribute | Attribute Value | |
|---|---|---|
| Factory Lead Time | 12 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 169A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 330W Tc | |
| Turn Off Delay Time | 130 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Series | HEXFET® | |
| Published | 2004 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Termination | Through Hole | |
| ECCN Code | EAR99 |
| Product Attribute | Attribute Value | |
|---|---|---|
| Resistance | 5.3mOhm | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | |
| Voltage - Rated DC | 55V | |
| Current Rating | 169A | |
| Lead Pitch | 2.54mm | |
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 330W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 13 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 5.3m Ω @ 101A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 5480pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V | |
| Rise Time | 190ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 110 ns |
| Product Attribute | Attribute Value | |
|---|---|---|
| Continuous Drain Current (ID) | 169A | |
| Threshold Voltage | 4V | |
| JEDEC-95 Code | TO-220AB | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 75A | |
| Drain to Source Breakdown Voltage | 55V | |
| Pulsed Drain Current-Max (IDM) | 680A | |
| Dual Supply Voltage | 55V | |
| Avalanche Energy Rating (Eas) | 560 mJ | |
| Recovery Time | 130 ns | |
| Max Junction Temperature (Tj) | 175°C | |
| Nominal Vgs | 4 V | |
| Height | 19.8mm | |
| Length | 10.668mm | |
| Width | 4.826mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
| Part Number | Description | Manufacturer |
| AUIRF1405TRANSISTORS | Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | International Rectifier |
| IRF1405PBFTRANSISTORS | Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD-FREE, PLASTIC PACKAGE-3 | International Rectifier |
| IRF1405TRANSISTORS | Power Field-Effect Transistor, 169A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier |
●Used in Electric Power Steering (EPS)
●Used in Anti-locking Braking System (ABS)
●Used in Wiper Control
●Used in Climate Control
●Used in Power Door
Infineon Technologies AG is a German semiconductor manufacturer founded in 1999 when the semiconductor operations of the former parent company Siemens AG were spun off. Infineon has about 46,665 employees and is one of the ten largest semiconductor manufacturers worldwide. It is the market leader in automotive and power semiconductors.
Download datasheets and manufacturer documentation for Infineon Technologies IRF1405PBF.
Download datasheets and manufacturer documentation for IRF1405PBF
TAGS
Comments