Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 130A TO-220AB IRF1407 is specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
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Oct 14, 2021
Janice Judith
How to Measure Mosfet 4 Different Types LM317T, IRF1407, P75NF750 | N Channel
Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 130A TO-220AB
IRF1407 is specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. There is a huge range of Semiconductors, Capacitors, Resistors and ICs in stock. Welcome RFQ.
IRF1407PBF
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.46515 | $2.47 |
| 10+ | $2.32562 | $23.26 |
| 100+ | $2.19398 | $219.4 |
| 500+ | $2.06979 | $1034.9 |
| 1000+ | $1.95263 | $1952.63 |
| Pin Number | Pin Name | Description |
| 3 | SOURCE | Normally connected to GROUND |
| 2 | DRAIN | Normally connected to LOAD |
| 1 | GATE | Normally used as TRIGGER to turn ON the MOSFET. |
IRF1407 Symbol
IRF1407 Footprint
IRF1407 is Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Infineon is a dynamic and flexible company. Success in the highly competitive and ever-changing microelectronics world is our constant goal. As the world's leading designer, manufacturer and supplier, Infineon has a wide range of products used in various microelectronics applications. Our product portfolio includes not only logic products, including digital, mixed-signal and analogue integrated circuits but also discrete semiconductor products.
Infineon Technologies IRF1407PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1407PBF.
| Product Attribute | Attribute Value | |
|---|---|---|
| Factory Lead Time | 12 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Supplier Device Package | TO-220AB | |
| Current - Continuous Drain (Id) @ 25℃ | 130A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 330W Tc | |
| Turn Off Delay Time | 150 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Series | HEXFET® | |
| Published | 2001 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Product Attribute | Attribute Value | |
|---|---|---|
| Resistance | 7.8Ohm | |
| Max Operating Temperature | 175°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | 75V | |
| Current Rating | 130A | |
| Element Configuration | Single | |
| Power Dissipation | 330W | |
| Turn On Delay Time | 11 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 78A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 5600pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 250nC @ 10V | |
| Drain to Source Voltage (Vdss) | 75V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 140 ns | |
| Continuous Drain Current (ID) | 130A |
| Product Attribute | Attribute Value | |
|---|---|---|
| Threshold Voltage | 4V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 75V | |
| Dual Supply Voltage | 75V | |
| Input Capacitance | 5.6nF | |
| Drain to Source Resistance | 7.8mOhm | |
| Rds On Max | 7.8 mΩ | |
| Nominal Vgs | 4 V | |
| Height | 16.51mm | |
| Length | 10.668mm | |
| Width | 4.826mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Advanced Process Technology
Ultra-Low On-Resistance
Dynamic DV/DT Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to up to Tjmax
The equivalent for IRF1407:
IRF1010E
The test circuit and waveform for IRF1407 is shown below.
Switching Time Test Circuit
Switching Time Waveforms
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
Basic Gate Charge Waveform
Gate Charge Test Circuit
Peak Diode Recovery dv /dt Test Circuit
For N-channel HEXFET® power MOSFETs.
For detailed information, you can find it in the datasheet at the end of the article.
It is available in a TO-220AB package.
IRF1407 Package
Download datasheets and manufacturer documentation for IRF1407PBF
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