IRF3710
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 57A TO-220AB
IRF3710 is a 57A 100V N-Channel Power MOSFET. This post will cover its equivalent, pinout, datasheet and more details about IRF3710. Welcome your RFQ!
IRF3710 N-Channel Power MOSFET: Equivalent, Datasheet, Pinout
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 57A TO-220AB IRF3710 is a 57A 100V N-Channel Power MOSFET.
3493
Nov 25, 2021
Lucy Martin
IRF3710PBF
596In Stock
Min.: 1 Mult.: 1
Quick Links
IRF3710 Pinout
IRF3710 CAD Model
IRF3710 Symbol
IRF3710 Footprint
IRF3710 3D Model
IRF3710 Description
Advanced processing techniques are used to achieve extraordinarily low on-resistance per silicon area using the IRF3710 57A 100V N-Channel Power MOSFET. This benefit, when paired with the high switching speed and ruggedized device architecture that HEXFET power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications. At power dissipation values of around 50 watts, the TO-220 package is universally recommended for all commercial-industrial applications. The TO-220's low heat resistance and low packaging cost contribute to its widespread use in the industry.
IRF3710 Feature
Advanced Process Technology
Ultra-Low On-Resistance
Dynamic DV/DT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
IRF3710 Application
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Switch Mode Power Supplies
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Power Factor Correction
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Electronic Lamp Ballasts
IRF3710 Equivalent
The equivalent for IRF3710:
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IRF044
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IRF044SMD
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IRF054
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IRF054SMD
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IRF100B201
IRF3710 Test Circuit
The following figure shows the test circuit of IRF3710:
IRF3710-Peak Diode Recovery DV /DTTest Circuit
IRF3710-For N-channel HEXFET8 power MOSFETs
Specifications
Infineon Technologies IRF3710PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3710PBF.
IRF3710PBF Tech Specifications
IRF3710PBF Tech Specifications
Infineon Technologies IRF3710PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3710PBF.
| Product Attribute | Attribute Value | |
|---|---|---|
| Factory Lead Time | 12 Weeks | |
| Package / Case | TO-220-3 | |
| Mounting Type | Through Hole | |
| Mount | Through Hole | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Turn Off Delay Time | 45 ns | |
| Power Dissipation (Max) | 200W Tc | |
| Number of Elements | 1 Element | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Current - Continuous Drain (Id) @ 25℃ | 57A Tc | |
| Series | HEXFET® | |
| Published | 2004 | |
| Packaging | Tube | |
| Operating Temperature | -55°C~175°C TJ | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Termination | Through Hole |
| Product Attribute | Attribute Value | |
|---|---|---|
| ECCN Code | EAR99 | |
| Resistance | 23MOhm | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Voltage - Rated DC | 100V | |
| Current Rating | 57A | |
| Lead Pitch | 2.54mm | |
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 200W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 12 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 23m Ω @ 28A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 3130pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V | |
| Rise Time | 58ns |
| Product Attribute | Attribute Value | |
|---|---|---|
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 47 ns | |
| Continuous Drain Current (ID) | 57A | |
| Threshold Voltage | 4V | |
| JEDEC-95 Code | TO-220AB | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 100V | |
| Dual Supply Voltage | 100V | |
| Avalanche Energy Rating (Eas) | 280 mJ | |
| Recovery Time | 220 ns | |
| Max Junction Temperature (Tj) | 175°C | |
| Nominal Vgs | 4 V | |
| Width | 4.69mm | |
| Length | 10.54mm | |
| Height | 19.8mm | |
| RoHS Status | ROHS3 Compliant | |
| Radiation Hardening | No | |
| REACH SVHC | No SVHC | |
| Lead Free | Lead Free |
IRF3710 Dimensions
The IRF3710 Dimensions were shown below:
IRF3710 Dimensions
IRF3710 Manufacturer
On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics. Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analogue integrated circuits, as well as discrete semiconductor products.
Datasheet PDF
IRF3710PBF Documents
IRF3710PBF Documents
Download datasheets and manufacturer documentation for IRF3710PBF
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Frequently Asked Questions
What is irf3710 and how does it work?
It is a fully avalanche rated device with a gate-source voltage of around 20V. I suggest you read this entire post till the end as I’ll detail the complete Introduction to IRF3710 covering datasheet, pinout, features, and applications. Let’s jump right in. The IRF3710 is an N-channel MOSFET mainly employed for fast switching purposes.
What is irf3710 series RoHS semiconductor?
RoHS IRF3710 Series RoHS SEMICONDUCTORNell High Power products-Channel Power MOSFET (57A, 100Volts)DESCRIPTION The Nell IRF3710 are N-channel enhancement mode Dsilicon gate power field-effect transistors. They are designed, tested and guaranteed to withstand the level of energy in a breakdown avalanche mode of operation.
Where is the gate pin located on an irf3710 MOSFET?
The gate pin is located between the source and the drain pin. The voltage on the gate pin is used to control the channel width. This IRF3710 MOSFET carries low ON resistance, making it a suitable pick for low drop switching applications. The low drop leads to low power loss, hence ensuring greater efficiency.
FAQ
What is irf3710 and how does it work?
It is a fully avalanche rated device with a gate-source voltage of around 20V. I suggest you read this entire post till the end as I’ll detail the complete Introduction to IRF3710 covering datasheet, pinout, features, and applications. Let’s jump right in. The IRF3710 is an N-channel MOSFET mainly employed for fast switching purposes.
What is irf3710 series RoHS semiconductor?
RoHS IRF3710 Series RoHS SEMICONDUCTORNell High Power products-Channel Power MOSFET (57A, 100Volts)DESCRIPTION The Nell IRF3710 are N-channel enhancement mode Dsilicon gate power field-effect transistors. They are designed, tested and guaranteed to withstand the level of energy in a breakdown avalanche mode of operation.
Where is the gate pin located on an irf3710 MOSFET?
The gate pin is located between the source and the drain pin. The voltage on the gate pin is used to control the channel width. This IRF3710 MOSFET carries low ON resistance, making it a suitable pick for low drop switching applications. The low drop leads to low power loss, hence ensuring greater efficiency.
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