Transistors - FETs, MOSFETs - Single MOSFET P-CH 55V 74A TO-220AB IRF4905 is a P-Channel HEXFET Power MOSFET available in a TO-220AB package and is based on Advanced Process Technology.
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Transistors - FETs, MOSFETs - Single MOSFET P-CH 55V 74A TO-220AB
IRF4905 is a P-Channel HEXFET Power MOSFET available in a TO-220AB package and is based on Advanced Process Technology. This article is going to introduce pinout, datasheet, circuit, features, and other details about IRF4905 P-Channel MOSFET.
IRF4905PBF
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.55583 | $2.56 |
| 10+ | $2.41116 | $24.11 |
| 100+ | $2.27468 | $227.47 |
| 500+ | $2.14593 | $1072.96 |
| 1000+ | $2.02446 | $2024.46 |
IRF4905 is a P-Channel HEXFET Power MOSFET with Advanced Process Technology that comes in a TO-220AB package. It is primarily utilized for quick switching and has an extremely low on-resistance.
This tiny device comes with three terminals called the gate, drain, and source where the gate terminal is used to control the current on the remaining two terminals. The area between source and drain is known as a channel that is widely dependent on the voltage applied to the gate terminal.
IRF4905 Pinout
| Pin No. | Pin Name | Symbol | Function |
| 1 | Gate | G | Control the current in the channel between drain and source |
| 2 | Drain | D | Emit several holes |
| 3 | Source | S | Collect some holes |
IRF4905 Symbol
IRF4905 Footprint
IRF4905 3D Model
Infineon Technologies IRF4905PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF4905PBF.
Infineon Technologies IRF4905PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF4905PBF.
| Product Attribute | Attribute Value | |
|---|---|---|
| Factory Lead Time | 12 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 74A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 200W Tc | |
| Turn Off Delay Time | 61 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Series | HEXFET® | |
| Published | 1997 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Termination | Through Hole | |
| ECCN Code | EAR99 |
| Product Attribute | Attribute Value | |
|---|---|---|
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Voltage - Rated DC | -55V | |
| Peak Reflow Temperature (Cel) | 250 | |
| Current Rating | -74A | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Lead Pitch | 2.54mm | |
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 200W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 18 ns | |
| FET Type | P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 20m Ω @ 38A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 3400pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V | |
| Rise Time | 99ns | |
| Drain to Source Voltage (Vdss) | 55V |
| Product Attribute | Attribute Value | |
|---|---|---|
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 96 ns | |
| Continuous Drain Current (ID) | -74A | |
| Threshold Voltage | -4V | |
| JEDEC-95 Code | TO-220AB | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 64A | |
| Drain-source On Resistance-Max | 0.02Ohm | |
| Drain to Source Breakdown Voltage | -55V | |
| Pulsed Drain Current-Max (IDM) | 260A | |
| Dual Supply Voltage | -55V | |
| Recovery Time | 130 ns | |
| Max Junction Temperature (Tj) | 175°C | |
| Nominal Vgs | -4 V | |
| Height | 19.8mm | |
| Length | 10.5156mm | |
| Width | 4.69mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Contains Lead, Lead Free |
Package Type: TO-220
Transistor Type: N Channel
Max Voltage Applied From Drain to Source: -55V
Max Gate to Source Voltage Should Be: ±20V
Max Continues Drain Current is: –74A
Max Pulsed Drain Current is: –260A
Max Power Dissipation is: 200W
Minimum Voltage Required to Conduct: -2V to -4V
Max Storage & Operating temperature should be: -55 to +175 Celsius
Increased ruggedness
Wide availability from distribution partners
Industry-standard qualification
High performance in low-frequency applications
Standard pin-out allows for drop-in replacement
High current capability
AM90P06-20P, AUIRF4905
Commercial and Industrial Applications
Fast Switching
Amplification Purpose
The IRF4905 is suitable for a wide range of switching and amplification applications. It can be used as a switch in applications such as DC to DC converters, power supply, and any other application that fits within its parameters. It's also useful for making high-power audio amplifiers. It's also a trustworthy transistor for commercial and industrial applications.
On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics. Infineon is a leading global designer, manufacturer, and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.
Download datasheets and manufacturer documentation for IRF4905PBF
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