ATTENTION: Due to increased demand and order volume, processing time may take an additional 1-3 business days.
HomeCommunitySubjectIRF510 Power MOSFET: Circuit, Datasheet, and Pinout

IRF510 Power MOSFET: Circuit, Datasheet, and Pinout

Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB The IRF510 is a high-speed N-Channel power MOSFET with an output load capability of up to 5.6A and load voltage up to 100V.

363

Aug 1, 2021

Tabitha Keats

Hydrogen Generator 555 Timer MOSFET IRF510 PWM

 

Trans MOSFET N-CH 100V 5.6A 3-Pin(3 Tab) TO-220AB

The IRF510 is a high-speed N-Channel power MOSFET with an output load capability of up to 5.6A and load voltage up to 100V.

IRF510

Inquiry
Min.: 1 Mult.: 1
Price not displayed? Not available to buy online? Please send an RFQ, and we will respond immediately.
Quick Links

IRF510 Description

The IRF510 is a high-speed N-Channel power MOSFET with an output load capability of up to 5.6A and load voltage up to 100V. The IRF510 power MOSFET is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. The IRF510 can be operated directly from integrated circuits.

IRF510 Pinout

IRF510 CAD Model

Symbol

 

Footprint

 

3D Model

IRF510 Features

  • Package Type: TO-220

  • Transistor Type: N Channel

  • Max Voltage Applied From Drain to Source: 100 V

  • Max Gate to Source Voltage: ±20 V

  • Max Continues Drain Current: 5.6 A

  • Max Pulsed Drain Current: 20 A

  • Max Power Dissipation: 43 W

  • Minimum Voltage Required to Conduct: 2 V to 4 V

  • Max Storage & Operating temperature: -55 to +170 Celsius

IRF510 Advantages

  • Dynamic dV/dt rating

  • Repetitive avalanche rated

  • Fast switching

  • Ease of paralleling

  • Simple drive requirements

Specifications

Vishay Siliconix IRF510 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF510.

IRF510 Tech Specifications

Vishay Siliconix IRF510 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF510.

Product Attribute Attribute Value
MountThrough Hole
Mounting TypeThrough Hole
Package / CaseTO-220-3
Number of Pins3Pins
Supplier Device PackageTO-220AB
Weight6.000006g
Current - Continuous Drain (Id) @ 25℃5.6A Tc
Drive Voltage (Max Rds On, Min Rds On)10V
Number of Elements1 Element
Power Dissipation (Max)43W Tc
Turn Off Delay Time15 ns
Operating Temperature-55°C~175°C TJ
PackagingTube
Published2016
Part StatusObsolete
Moisture Sensitivity Level (MSL)1 (Unlimited)
Product Attribute Attribute Value
Max Operating Temperature175°C
Min Operating Temperature-55°C
Voltage - Rated DC100V
Current Rating5.6A
Number of Channels1Channel
Element ConfigurationSingle
Power Dissipation43W
Turn On Delay Time6.9 ns
FET TypeN-Channel
Rds On (Max) @ Id, Vgs540mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds180pF @ 25V
Gate Charge (Qg) (Max) @ Vgs8.3nC @ 10V
Rise Time16ns
Drain to Source Voltage (Vdss)100V
Vgs (Max)±20V
Product Attribute Attribute Value
Fall Time (Typ)9.4 ns
Continuous Drain Current (ID)5.6A
Gate to Source Voltage (Vgs)20V
Drain to Source Breakdown Voltage100V
Input Capacitance180pF
Drain to Source Resistance540mOhm
Rds On Max540 mΩ
Nominal Vgs4 V
Height9.01mm
Length10.41mm
Width4.7mm
REACH SVHCUnknown
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
Lead FreeContains Lead
0 Products View Similar

IRF510 Alternatives

Where to use IRF510

The IRF510 can be used in normal and high-speed applications such as DC to DC converters, UPS, power supplies, etc. It can drive high-power relays switches with very low power. And it can be used to drive high-power transistors or any application that requires speed switching with low gate power. What's more, due to its low gate power requirements, it can be operated directly from ICs, microcontrollers, and many electronic platforms such as Arduino, raspberry pi, etc. Other than that, it can also be used to build high-power audio amplifier circuits or be used as a separate amplifier to drive speakers.

IRF510 Applications

  • Fast Switching

  • Uninterruptible Power Supplies

  • Battery Chargers & Management Systems

  • Solar Battery Chargers & Applications

  • Solar Uninterruptible Power Supplies

  • Motor Driver Circuits

  • Computer & telecommunication applications

IRF510 Application Circuits

Switching Time Test Circuit

 

Unclamped Inductive Test Circuit

 

Gate Charge Test Circuit

IRF510 Package

IRF510 Package Outline

 

IRF510 Mechanical Data

 

IRF510 Manufacturer

Vishay's product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Vishay is proud to be a major partner with Digi-Key.

Datasheet PDF

Download datasheets and manufacturer documentation for Vishay Siliconix IRF510.

IRF510 Documents

Download datasheets and manufacturer documentation for IRF510

Datasheets
IRF510
Other Related Documents
Packaging Information
PCN Obsolescence/ EOL
SIL-018-2015-Rev-0 20/May/2015

Frequently Asked Questions

1.What is IRF510?
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
2.How to safely long run IRF510 in a circuit?
Getting long-term performance from IRF510 it is suggested to use it at least 20% below its maximum ratings. The maximum drain current of this MOSFET is 5.6A, therefore, does not drive load of more than 4.5A. The maximum drain to source voltage is 100V for safety stay under 80V. The Gate to source voltage should not be increased from ±20V. When operating the transistor always use a suitable heatsink with it and always store and operate in temperature between -55 to +175 Centigrade.
3.What is a power Mosfet used for?
A type of metal oxide semiconductor field-effect transistor (MOSFET) used to switch large amounts of current. Power MOSFETs use a vertical structure with source and drain terminals at opposite sides of the chip. The vertical orientation eliminates crowding at the gate and offers larger channel widths.
4.How MOSFET works as an amplifier?
A small change in gate voltage produces a large change in drain current as in JFET. This fact makes MOSFET capable of raising the strength of a weak signal; thus acting as an amplifier. During the positive half-cycle of the signal, the positive voltage on the gate increases and produces the enhancement-mode.
FAQ
1.What is IRF510?
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
2.How to safely long run IRF510 in a circuit?
Getting long-term performance from IRF510 it is suggested to use it at least 20% below its maximum ratings. The maximum drain current of this MOSFET is 5.6A, therefore, does not drive load of more than 4.5A. The maximum drain to source voltage is 100V for safety stay under 80V. The Gate to source voltage should not be increased from ±20V. When operating the transistor always use a suitable heatsink with it and always store and operate in temperature between -55 to +175 Centigrade.
3.What is a power Mosfet used for?
A type of metal oxide semiconductor field-effect transistor (MOSFET) used to switch large amounts of current. Power MOSFETs use a vertical structure with source and drain terminals at opposite sides of the chip. The vertical orientation eliminates crowding at the gate and offers larger channel widths.
4.How MOSFET works as an amplifier?
A small change in gate voltage produces a large change in drain current as in JFET. This fact makes MOSFET capable of raising the strength of a weak signal; thus acting as an amplifier. During the positive half-cycle of the signal, the positive voltage on the gate increases and produces the enhancement-mode.

TAGS

Share