Using IRF520 MOSFET Switch Button to Turn ON or OFF DC load
MOSFET N-CH 100V 10A TO-220
The IRF520 is an N-Channel Power Mosfet that's been designed to minimize input capacitance and gate charge.
IRF520 MOSFET: Pinout, Datasheet, Test Circuit, and Equivalents
MOSFET N-CH 100V 10A TO-220 The IRF520 is an N-Channel Power Mosfet that's been designed to minimize input capacitance and gate charge.
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Jul 29, 2021
Jonas Kathleen
IRF520
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IRF520 Description
The IRF520 is an N-Channel Power Mosfet that's been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. The IRF520 is also intended for any applications with low gate drive requirements.
The IRF520 is a right MOSFET if you are looking to drive the output of an IC or from a platform like Arduino or Raspberry Pi. The maximum load this transistor can drive is 9.2A with the maximum load voltage of upto 100V. The transistor is also a high speed switching device due to which it can be used in any application where the switching speed is very important for example in UPS circuits. Moreover it can also drive a load of upto 37A in pulse mode.
On the other hand the max power dissipation of 60 watts also makes it ideal to use in audio amplifier circuit and in audio amplifier circuit stages.
IRF520 Pinout
IRF520 CAD Model
Symbol
Footprint
3D Model
IRF520 Features
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Package Type: TO-220
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Transistor Type: N Channel
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Drain to Source Breakdown Voltage: 100 V
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Gate to Source Voltage: ±20 V
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Continuous Drain Current (ID): 9.2 A
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Max Power Dissipation: 60 W
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Drain Source Resistance (RDS): 0.27 Ohms
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Gate threshold voltage (VGS-th): 4 V (max)
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Rise time and fall time: 30 nS and 20 nS
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Storage & Operating temperature: -55 to +175 Celsius
IRF520 Advantages
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Typical RDS(on) = 0.115Ω
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Avalanche rugged technology
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100% avalanche tested
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Low gate charge
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High current capability
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175 oC operating temperature
Specifications
STMicroelectronics IRF520 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF520.
IRF520 Tech Specifications
IRF520 Tech Specifications
STMicroelectronics IRF520 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF520.
| Product Attribute | Attribute Value | |
|---|---|---|
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 10A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 60W Tc | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Series | STripFET™ II | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 |
| Product Attribute | Attribute Value | |
|---|---|---|
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | FAST SWITCHING | |
| Terminal Position | SINGLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | not_compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | IRF5 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 270m Ω @ 7A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Product Attribute | Attribute Value | |
|---|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V | |
| Drain to Source Voltage (Vdss) | 100V | |
| Vgs (Max) | ±20V | |
| JEDEC-95 Code | TO-220AB | |
| Drain Current-Max (Abs) (ID) | 10A | |
| Drain-source On Resistance-Max | 0.27Ohm | |
| Pulsed Drain Current-Max (IDM) | 40A | |
| DS Breakdown Voltage-Min | 100V | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Feedback Cap-Max (Crss) | 100 pF | |
| Turn Off Time-Max (toff) | 50ns | |
| Turn On Time-Max (ton) | 115ns | |
| RoHS Status | Non-RoHS Compliant |
IRF520 Test Circuits
IRF520 Unclamped Inductive Load Test Circuit
IRF520 Unclamped Inductive Waveform
IRF520 Switching Times Test Circuits For Resistive Load
IRF520 Gate Charge Test Circuit
IRF520 Test Circuit For Inductive Load Switching And Diode Recovery Times
Where to use IRF520
The IRF520 can be used in wide variety of circuits such as motor controller circuits, audio amplifier circuits, low current UPS, and power supplies. Besides that it can also be used to drive other high power components such as relays and transistors etc. Due to low gate power requirements it can easily be used at the output of arduino, raspberry pi and a variety of ICs and microcontrollers to drive high current loads.
IRF520 Applications
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DC to DC & DC to AC converters
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High Speed switching applications
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Uninterruptible power supplies
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Battery chargers
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Battery management systems
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Solar Applications
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Motor Driver Circuits
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Computer & telecommunication applications
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LED dimmers or flashers
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Audio Amplifiers
IRF520 Package
IRF520 Package Outline
IRF520 Mechanical Data
IRF520 Manufacturer
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
Datasheet PDF
Download datasheets and manufacturer documentation for STMicroelectronics IRF520.
IRF520 Documents
IRF520 Documents
Download datasheets and manufacturer documentation for IRF520
Frequently Asked Questions
1.What is IRF520?
The IRF520 is a Power Mosfet with 9.2A collector current and 100V breakdown voltage. The mosfet has a low gate threshold voltage of 4V and hence commonly used with microcontrollers like Arduino for switching high current loads.
2.How to safely long run IRF520 in a circuit?
To get long term performance use IRF520 at least 20% below from its max ratings. The Maximum drain current is 9.2A thus do not drive load of more than 7.36A. The max drain to source voltage is 100V thus the load voltage should be under 80V. Gate to source voltage should be under ±20V and always store and operate the transistor in temperature above -55 Celsius and below +175 Celsius.
3.How does MOSFET work?
It works by varying the width of a channel along which charge carriers flow (electrons or holes). The charge carriers enter the channel at source and exit via the drain.
4.What are power MOSFETs used for?
A type of metal oxide semiconductor field effect transistor (MOSFET) used to switch large amounts of current. Power MOSFETs use a vertical structure with source and drain terminals at opposite sides of the chip. The vertical orientation eliminates crowding at the gate and offers larger channel widths.
5.Why N channel is better than P channel MOSFET?
N-Channel MOSFETs are more efficient than P-Channel MOSFETs. It comes down to physics. N-Channel MOSFETs use electron flow as the charge carrier. P-Channel MOSFETs use hole flow as the charge carrier, which has less mobility than electron flow. And therefore, they have higher resistance and are less efficient.
FAQ
1.What is IRF520?
The IRF520 is a Power Mosfet with 9.2A collector current and 100V breakdown voltage. The mosfet has a low gate threshold voltage of 4V and hence commonly used with microcontrollers like Arduino for switching high current loads.
2.How to safely long run IRF520 in a circuit?
To get long term performance use IRF520 at least 20% below from its max ratings. The Maximum drain current is 9.2A thus do not drive load of more than 7.36A. The max drain to source voltage is 100V thus the load voltage should be under 80V. Gate to source voltage should be under ±20V and always store and operate the transistor in temperature above -55 Celsius and below +175 Celsius.
3.How does MOSFET work?
It works by varying the width of a channel along which charge carriers flow (electrons or holes). The charge carriers enter the channel at source and exit via the drain.
4.What are power MOSFETs used for?
A type of metal oxide semiconductor field effect transistor (MOSFET) used to switch large amounts of current. Power MOSFETs use a vertical structure with source and drain terminals at opposite sides of the chip. The vertical orientation eliminates crowding at the gate and offers larger channel widths.
5.Why N channel is better than P channel MOSFET?
N-Channel MOSFETs are more efficient than P-Channel MOSFETs. It comes down to physics. N-Channel MOSFETs use electron flow as the charge carrier. P-Channel MOSFETs use hole flow as the charge carrier, which has less mobility than electron flow. And therefore, they have higher resistance and are less efficient.
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