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IRF5210 Power MOSFET: Datasheet, Price, Pinout

IRF5210 is a 40A 100V P-Channel Power MOSFET. This article mainly covers its pinout, datasheet, application and more information about IRF5210.

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Feb 24, 2022

Vera Becky

IRF5210 is a 40A 100V P-Channel Power MOSFET. This article mainly covers its pinout, datasheet, application and more information about IRF5210.

IRF5210PBF

5000In Stock
Min.: 1 Mult.: 1
Quantity Unit Price Ext. Price
1+ $2.71325$2.71
10+ $2.55967$25.6
100+ $2.41478$241.48
500+ $2.2781$1139.05
1000+ $2.14915$2149.15
Unit Price:$2.71325
Subtotal: $2.71
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IRF5210 Pinout

IRF5210 Pinout

IRF5210 CAD Model

Symbol

irf5210 Symbol

Footprint

IRF5210 Footprint

3D Model

IRF5210 3D Model

IRF5210 Description

Advanced processing techniques were used to create extraordinarily low on-resistance per silicon area in the  IRF5210  40 A 100 V P-Channel Power MOSFET. This feature, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFET  s are known for, gives the designer an exceptionally efficient and dependable device that can be used in a broad range of applications. At power dissipation values of around 50  watts, the TO-220   package is widely recommended for all commercial-industrial applications.

IRF5210 Feature

  • Advanced Process Technology

  • Ultra-Low On-Resistance

  • Dynamic DV/DT Rating

  • 175°C Operating Temperature 

  • Fast Switching

  • P-Channel

  • Fully Avalanche Rated

IRF5210 Application

  • Switching applications

IRF5210 Equivalent

The equivalent for IRF5210:

IRF034, IRF044, IRF044SMD, IRF054, IRF054SMD, IRF100B201

 

IRF5210 Test Circuit

IRF5210 Test Circuit is shown below

IRF5210 Package

IRF5210 Package

IRF5210 Manufacturer

On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics. Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analogue integrated circuits, as well as discrete semiconductor products.

Specifications

IRF5210PBF Tech Specifications

Infineon Technologies IRF5210PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF5210PBF.

Product Attribute Attribute Value
Factory Lead Time12 Weeks
Contact PlatingTin
Package / CaseTO-220-3
MountThrough Hole
Mounting TypeThrough Hole
Number of Pins3Pins
Transistor Element MaterialSILICON
Number of Elements1 Element
Power Dissipation (Max)200W Tc
Turn Off Delay Time79 ns
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25℃40A Tc
Operating Temperature-55°C~175°C TJ
PackagingTube
SeriesHEXFET®
Published1998
JESD-609 Codee3
Part StatusActive
Moisture Sensitivity Level (MSL)1 (Unlimited)
Number of Terminations3Terminations
TerminationThrough Hole
Product Attribute Attribute Value
ECCN CodeEAR99
Resistance60mOhm
Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Voltage - Rated DC-100V
Peak Reflow Temperature (Cel)250
Current Rating-40A
Time@Peak Reflow Temperature-Max (s)30
Lead Pitch2.54mm
Number of Channels1Channel
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation200W
Case ConnectionDRAIN
Turn On Delay Time17 ns
FET TypeP-Channel
Transistor ApplicationSWITCHING
Rds On (Max) @ Id, Vgs60m Ω @ 24A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
Rise Time86ns
Product Attribute Attribute Value
Drain to Source Voltage (Vdss)100V
Vgs (Max)±20V
Fall Time (Typ)81 ns
Continuous Drain Current (ID)-40A
Threshold Voltage-4V
JEDEC-95 CodeTO-220AB
Gate to Source Voltage (Vgs)20V
Drain to Source Breakdown Voltage-100V
Dual Supply Voltage-100V
Avalanche Energy Rating (Eas)780 mJ
Recovery Time260 ns
Max Junction Temperature (Tj)175°C
Nominal Vgs-4 V
Width4.69mm
Length10.5156mm
Height19.8mm
REACH SVHCNo SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead FreeLead Free
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Datasheet PDF

IRF5210PBF Documents

Download datasheets and manufacturer documentation for IRF5210PBF

Frequently Asked Questions

What was used to create low on-resistance per silicon area in the IRF5210 40 A 100 V P-Channel Poweré
Advanced processing techniques
What is the name of the ruggedized device architecture used by the IRF5210 40 A 100 V P-Channel Power MOSFET?
HEXFET Power MOSFETs.
What is the power dissipation value of the TO-220 package?
50 watts.
What do Fifth Generation HEXFETs use to achieve low on-resistance per sllicon area?
Advanced processing techniques.
What benefit does HEXFET Power MOSFETs have?
Fast switching speed and ruggedized device design.
FAQ
What was used to create low on-resistance per silicon area in the IRF5210 40 A 100 V P-Channel Poweré
Advanced processing techniques
What is the name of the ruggedized device architecture used by the IRF5210 40 A 100 V P-Channel Power MOSFET?
HEXFET Power MOSFETs.
What is the power dissipation value of the TO-220 package?
50 watts.
What do Fifth Generation HEXFETs use to achieve low on-resistance per sllicon area?
Advanced processing techniques.
What benefit does HEXFET Power MOSFETs have?
Fast switching speed and ruggedized device design.

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