IRF530 test part 1
MOSFET N-CH 100V 14A TO-220
The IRF530 is an N-channel MOSFET that's been specifically designed to minimize input capacitance and gate charge.
MOSFET N-CH 100V 14A TO-220 The IRF530 is an N-channel MOSFET that's been specifically designed to minimize input capacitance and gate charge.
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Aug 2, 2021
Rod Katrine
IRF530 test part 1
MOSFET N-CH 100V 14A TO-220
The IRF530 is an N-channel MOSFET that's been specifically designed to minimize input capacitance and gate charge.
The IRF530 is an N-channel MOSFET that's been specifically designed to minimize input capacitance and gate charge. It is suitable as a primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. The IRF530 is also intended for any applications with low gate drive requirements.

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3D Model

Transistor Type: N Channel
Package Type: TO-220AB And Other Packages
Max Voltage Applied From Drain to Source: 100 V
Max Gate to Source Voltage: ±20 V
Max Continues Drain Current: 14 A
Max Pulsed Drain Current: 56 A
Max Power Dissipation: 79 W
Minimum Voltage Required to Conduct: 2 V to 4 V
Max Drain to Source On-State Resistance: 0.16 mΩ
Storage & Operating temperature: -55 to +175 Centigrade
Typical RDS(on) = 0.115 Ω
Dynamic dV/dt rating
Avalanche rugged technology
100% avalanche tested
Low gate charge
High current capability
175 °C operating temperature
Fast switching
Ease of paralleling
Simple drive requirements
STMicroelectronics IRF530 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF530.
STMicroelectronics IRF530 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF530.
| Product Attribute | Attribute Value | |
|---|---|---|
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 14A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 60W Tc | |
| Turn Off Delay Time | 32 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Series | STripFET™ II | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations |
| Product Attribute | Attribute Value | |
|---|---|---|
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Voltage - Rated DC | 100V | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | not_compliant | |
| Current Rating | 14A | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | IRF5 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 60W | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING |
| Product Attribute | Attribute Value | |
|---|---|---|
| Rds On (Max) @ Id, Vgs | 160m Ω @ 7A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 458pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V | |
| Rise Time | 25ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 8 ns | |
| Continuous Drain Current (ID) | 14A | |
| JEDEC-95 Code | TO-220AB | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 100V | |
| Pulsed Drain Current-Max (IDM) | 56A | |
| Avalanche Energy Rating (Eas) | 70 mJ | |
| RoHS Status | Non-RoHS Compliant | |
| Lead Free | Contains Lead |

The IRF530 can be used in a variety of general-purpose and high-speed high-power applications. The high-speed application can be in an electronic device or appliance circuit in which the circuit designer requires very fast switching of in nanoseconds time, the applications can be UPS circuits, battery charger circuits, etc.
The IRF530 also has low gate driving capability therefore the user can operate directly from the output of ICs or microcontrollers. It can also drive load of up to 56A in pulse mode.
Besides that, the IRF530 can also be used as a separate audio amplifier or higher power audio amplifier.

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High current, high switching speed
Uninterrupted power supplies
Solenoid and relay drivers
Regulator
DC-DC & DC-AC converters
Motor control, audio amplifiers
Automotive environment (injection, ABS, air-bag, lamp drivers, etc.)
Battery chargers and BMS circuits
Solar power supply applications

IRF530 Package Outline

IRF530 Mechanical Data
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
Download datasheets and manufacturer documentation for STMicroelectronics IRF530.
Download datasheets and manufacturer documentation for IRF530
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