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IRF530 MOSFET: Datasheet, Test Circuit, and Pinout

MOSFET N-CH 100V 14A TO-220 The IRF530 is an N-channel MOSFET that's been specifically designed to minimize input capacitance and gate charge.

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Aug 2, 2021

Rod Katrine

IRF530 test part 1

 

MOSFET N-CH 100V 14A TO-220

The IRF530 is an N-channel MOSFET that's been specifically designed to minimize input capacitance and gate charge.

IRF530

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IRF530 Description

The IRF530 is an N-channel MOSFET that's been specifically designed to minimize input capacitance and gate charge. It is suitable as a primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. The IRF530 is also intended for any applications with low gate drive requirements.

IRF530 Pinout

IRF530 CAD Model

Symbol

 

Footprint

 

3D Model

IRF530 Features

  • Transistor Type: N Channel

  • Package Type: TO-220AB And Other Packages

  • Max Voltage Applied From Drain to Source: 100 V

  • Max Gate to Source Voltage: ±20 V

  • Max Continues Drain Current: 14 A

  • Max Pulsed Drain Current: 56 A

  • Max Power Dissipation: 79 W

  • Minimum Voltage Required to Conduct: 2 V to 4 V

  • Max Drain to Source On-State Resistance: 0.16 mΩ

  • Storage & Operating temperature: -55 to +175 Centigrade

IRF530 Advantages

  • Typical RDS(on) = 0.115 Ω

  • Dynamic dV/dt rating

  • Avalanche rugged technology

  • 100% avalanche tested

  • Low gate charge

  • High current capability

  • 175 °C operating temperature

  • Fast switching

  • Ease of paralleling

  • Simple drive requirements

 

Specifications

STMicroelectronics IRF530 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF530.

IRF530 Tech Specifications

STMicroelectronics IRF530 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF530.

Product Attribute Attribute Value
MountThrough Hole
Mounting TypeThrough Hole
Package / CaseTO-220-3
Transistor Element MaterialSILICON
Current - Continuous Drain (Id) @ 25℃14A Tc
Drive Voltage (Max Rds On, Min Rds On)10V
Number of Elements1 Element
Power Dissipation (Max)60W Tc
Turn Off Delay Time32 ns
Operating Temperature-55°C~175°C TJ
PackagingTube
SeriesSTripFET™ II
JESD-609 Codee3
Part StatusObsolete
Moisture Sensitivity Level (MSL)1 (Unlimited)
Number of Terminations3Terminations
Product Attribute Attribute Value
ECCN CodeEAR99
Terminal FinishMatte Tin (Sn)
Voltage - Rated DC100V
Peak Reflow Temperature (Cel)NOT SPECIFIED
Reach Compliance Codenot_compliant
Current Rating14A
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Base Part NumberIRF5
Pin Count3
JESD-30 CodeR-PSFM-T3
Qualification StatusNot Qualified
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation60W
FET TypeN-Channel
Transistor ApplicationSWITCHING
Product Attribute Attribute Value
Rds On (Max) @ Id, Vgs160m Ω @ 7A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds458pF @ 25V
Gate Charge (Qg) (Max) @ Vgs21nC @ 10V
Rise Time25ns
Vgs (Max)±20V
Fall Time (Typ)8 ns
Continuous Drain Current (ID)14A
JEDEC-95 CodeTO-220AB
Gate to Source Voltage (Vgs)20V
Drain to Source Breakdown Voltage100V
Pulsed Drain Current-Max (IDM)56A
Avalanche Energy Rating (Eas)70 mJ
RoHS StatusNon-RoHS Compliant
Lead FreeContains Lead
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IRF530 Alternatives

Where to use IRF530

The IRF530 can be used in a variety of general-purpose and high-speed high-power applications. The high-speed application can be in an electronic device or appliance circuit in which the circuit designer requires very fast switching of in nanoseconds time, the applications can be UPS circuits, battery charger circuits, etc.

The IRF530 also has low gate driving capability therefore the user can operate directly from the output of ICs or microcontrollers. It can also drive load of up to 56A in pulse mode.

Besides that, the IRF530 can also be used as a separate audio amplifier or higher power audio amplifier.

 

IRF530 Test Circuits

Unclamped Inductive Load Test Circuit

 

Switching Times Test Circuits For Resistive Load

 

Gate Charge test Circuit

 

IRF530 Applications

  • High current, high switching speed

  • Uninterrupted power supplies

  • Solenoid and relay drivers

  • Regulator

  • DC-DC & DC-AC converters

  • Motor control, audio amplifiers

  • Automotive environment (injection, ABS, air-bag, lamp drivers, etc.)

  • Battery chargers and BMS circuits

  • Solar power supply applications

 

IRF530 Package

IRF530 Package Outline

 

IRF530 Mechanical Data

 

IRF530 Manufacturer

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

Datasheet PDF

Download datasheets and manufacturer documentation for STMicroelectronics IRF530.

IRF530 Documents

Download datasheets and manufacturer documentation for IRF530

Frequently Asked Questions

1.What is IRF530?
IRF530 is an N-channel MOSFET capable of driving continuous load of 14A with load voltage of 100V. Other than that IRF530 can also be used as a separate audio amplifier or one can also use it in higher power audio amplifiers.
2.Where are MOSFETs used?
Power MOSFETs are commonly used in automotive electronics, particularly as switching devices in electronic control units, and as power converters in modern electric vehicles. The insulated-gate bipolar transistor (IGBT), a hybrid MOS-bipolar transistor, is also used for a wide variety of applications.
3.How to safely long run IRF520 in a circuit?
To get long-term performances always use a component at least 20% below its maximum ratings and the same applies to the IRF530 transistor. The maximum drain current is 14A therefore do not drive load of more than 11.2A. The maximum load voltage is 100V so do not drive load of more than 80V. Use a proper heatsink with the transistor and always store or operate this transistor in temperature between -55 centigrade to +150 centigrade.
FAQ
1.What is IRF530?
IRF530 is an N-channel MOSFET capable of driving continuous load of 14A with load voltage of 100V. Other than that IRF530 can also be used as a separate audio amplifier or one can also use it in higher power audio amplifiers.
2.Where are MOSFETs used?
Power MOSFETs are commonly used in automotive electronics, particularly as switching devices in electronic control units, and as power converters in modern electric vehicles. The insulated-gate bipolar transistor (IGBT), a hybrid MOS-bipolar transistor, is also used for a wide variety of applications.
3.How to safely long run IRF520 in a circuit?
To get long-term performances always use a component at least 20% below its maximum ratings and the same applies to the IRF530 transistor. The maximum drain current is 14A therefore do not drive load of more than 11.2A. The maximum load voltage is 100V so do not drive load of more than 80V. Use a proper heatsink with the transistor and always store or operate this transistor in temperature between -55 centigrade to +150 centigrade.

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