ATTENTION: Due to increased demand and order volume, processing time may take an additional 1-3 business days.
HomeCommunitySubjectIRF530N N-Channel MOSFET: 100V, 17A Power MOSFET, Pinout and Datasheet

IRF530N N-Channel MOSFET: 100V, 17A Power MOSFET, Pinout and Datasheet

Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 17A TO220AB The IRF530N is an N-Channel power MOSFET supplied in the TO220AB conventional leaded package.

241

Nov 19, 2021

Afra Addison

12V LED strip on Arduino with IRF530N Mosfet transistors - Arduino for beginners - with code

Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 17A TO220AB

The IRF530N is an N-Channel power MOSFET supplied in the TO220AB conventional leaded package. This article is going to explain the datasheet, pinout, applications, benefits, and more details about IRF530N MOSFET.

 

IRF530N,127

Inquiry
Min.: 1 Mult.: 1
Price not displayed? Not available to buy online? Please send an RFQ, and we will respond immediately.
Quick Links

What is IRF530N?

The IRF530N is an N-Channel power MOSFET  supplied in the TO220AB  conventional leaded package. The IR MOSFET  series of power MOSFET  s uses proven silicon technologies to provide designers with a diverse device portfolio to serve a variety of applications including DC motors, inverters, SMPS, lights, load switches, and battery-powered applications. For ease of design, the devices come in a choice of surface mount and through-hole packaging with industry-standard footprints.

IRF530N Pinout

Pin No. Description
1 gate
2 drain
3 source
tab drain

IRF530N CAD Model

IRF530N Symbol

IRF530N Footprint

IRF530N 3D Model

Specifications

NXP USA Inc. IRF530N,127 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. IRF530N,127.

IRF530N,127 Tech Specifications

NXP USA Inc. IRF530N,127 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. IRF530N,127.

Product Attribute Attribute Value
Mounting TypeThrough Hole
Package / CaseTO-220-3
Surface MountNO
Transistor Element MaterialSILICON
Current - Continuous Drain (Id) @ 25℃17A Tc
Drive Voltage (Max Rds On, Min Rds On)10V
Number of Elements1 Element
Power Dissipation (Max)79W Tc
Operating Temperature-55°C~175°C TJ
PackagingTube
SeriesTrenchMOS™
Published1999
JESD-609 Codee3
Part StatusObsolete
Moisture Sensitivity Level (MSL)1 (Unlimited)
Product Attribute Attribute Value
Number of Terminations3Terminations
ECCN CodeEAR99
Terminal FinishMatte Tin (Sn)
Terminal PositionSINGLE
Peak Reflow Temperature (Cel)NOT SPECIFIED
Reach Compliance Codeunknown
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Pin Count3
JESD-30 CodeR-PSFM-T3
Qualification StatusNot Qualified
ConfigurationSINGLE WITH BUILT-IN DIODE
Operating ModeENHANCEMENT MODE
Case ConnectionDRAIN
FET TypeN-Channel
Transistor ApplicationSWITCHING
Product Attribute Attribute Value
Rds On (Max) @ Id, Vgs110m Ω @ 9A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds633pF @ 25V
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
Drain to Source Voltage (Vdss)100V
Vgs (Max)±20V
JEDEC-95 CodeTO-220AB
Drain Current-Max (Abs) (ID)17A
Drain-source On Resistance-Max0.11Ohm
Pulsed Drain Current-Max (IDM)68A
DS Breakdown Voltage-Min100V
Avalanche Energy Rating (Eas)150 mJ
RoHS StatusROHS3 Compliant
0 Products View Similar

IRF530N Features

  • Planar cell structure for wide SOA

  • Optimized for broadest availability from distribution partners

  • Product qualification according to JEDEC standard

  • Silicon optimized for applications switching below <100kHz

  • Industry-standard through-hole power package 

  • High-current rating

IRF530N Benefits

  • Increased ruggedness

  • Wide availability from distribution partners

  • Industry-standard qualification

  • High performance in low-frequency applications

  • Standard pin-out allows for drop-in replacement

  • High current capability

IRF530N Applications

  • DC to DC Converter  

  • Switched Mode Power Supplies

IRF530N Test Circuit

IRF530N Test Circuit

IRF530N Package Dimensions

IRF530N Manufacturer

NXP Semiconductors enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better, and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is driving innovation in the secure connected vehicle, end-to-end security & privacy, and smart connected solutions markets. Built on more than 60 years of combined experience and expertise, the company has 45,000 employees in more than 35 countries. Freescale Semiconductor has been acquired by NXP Semiconductor. Freescale Semiconductor parts are now a part of the NXP family (Dec 2015)

Datasheet PDF

IRF530N,127 Documents

Download datasheets and manufacturer documentation for IRF530N,127

Datasheets
IRF530N

Frequently Asked Questions

What is an N-channel MOSFET?
N-Channel MOSFET is a type of metal oxide semiconductor field-effect transistor that is categorized under the field-effect transistors (FET).
What is IRF530N mosfet used for?
IRF530N MOSFET is used to switch the positive supply to the motor for forwarding direction (high-side switching) while the N-channel MOSFET is used to switch the negative supply to the motor for the reverse direction (low-side switching).
How does IRF530N work?
IRF530N N-Channel MOSFET with Source connected to 0V (either directly or via a current limiting resistor) and the load connected to Drain. Whenever the Gate voltage exceeds the Source voltage by at least the Gate Threshold Voltage the MOSFET conducts. The higher the voltage, the more the Mosfet can conduct.
FAQ
What is an N-channel MOSFET?
N-Channel MOSFET is a type of metal oxide semiconductor field-effect transistor that is categorized under the field-effect transistors (FET).
What is IRF530N mosfet used for?
IRF530N MOSFET is used to switch the positive supply to the motor for forwarding direction (high-side switching) while the N-channel MOSFET is used to switch the negative supply to the motor for the reverse direction (low-side switching).
How does IRF530N work?
IRF530N N-Channel MOSFET with Source connected to 0V (either directly or via a current limiting resistor) and the load connected to Drain. Whenever the Gate voltage exceeds the Source voltage by at least the Gate Threshold Voltage the MOSFET conducts. The higher the voltage, the more the Mosfet can conduct.

TAGS

Share