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IRF540 N-Channel MOSFET: Circuit, Datasheet, and Pinout

MOSFET N-CH 100V 22A TO-220 The IRF540 is a common N-channel enhancement MOSFET that's popular among hobbyists and electronic designers.

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Aug 4, 2021

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Top 5 Electronics Projects using IRF540 | irf540 top circuits

 

MOSFET N-CH 100V 22A TO-220

The IRF540 is a common N-channel enhancement MOSFET that's popular among hobbyists and electronic designers.

IRF540

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IRF540 Description

The IRF540 is a common N-channel enhancement MOSFET that's popular among hobbyists and electronic designers. The low thermal resistance and low package cost of the TO-220AB make it a favorite in the industry. The IRF540 is designed to drive high current loads. It can handle a maximum load of upto 23A and the maximum load voltage is upto 100V DC. Its trench technology makes it capable of reaching high-level driving capability. It can be used for both switching and amplification purposes. It is capable of performing high-speed switching. Therefore, it can be used in a wide variety of applications where you want to switch the load with high speed such as UPS.

The IRF540 can also be used as an amplifier, the maximum power dissipation of 100W makes it ideal to build a high power audio amplifier, and it can also be used in high power audio amplifier stages.

IRF540 Pinout

IRF540 CAD Model

Symbol

 

Footprint

 

3D Model

IRF540 Features

  • Package Type: TO-220

  • Transistor Type: N Channel

  • Max Drain to Source Voltage: 100 V

  • Max Gate to Source Voltage: ±20 V

  • Max Continues Drain Current: 23 A (Different manufacturers have slightly different ratings of continuous drain current)

  • Max Pulsed Drain Current: 92 A (Different manufacturers have slightly different ratings of continuous drain current)

  • Max Power Dissipation: 100 W

  • Minimum Voltage Required to Conduct: 2 V to 4 V

  • Storage & Operating temperature: -55 to +150 Celsius

IRF540 Advantages

  • Typical RDS(on) = 0.055Ω

  • Exceptional dv/dt capability

  • 100% avalanche tested

  • Low gate charge

  • Application-oriented characterization

  • Simple drive requirements

  • Ease of paralleling

  • Fast switching

Specifications

STMicroelectronics IRF540 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF540.

IRF540 Tech Specifications

STMicroelectronics IRF540 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF540.

Product Attribute Attribute Value
Package / CaseTO-220-3
Mounting TypeThrough Hole
MountThrough Hole
Transistor Element MaterialSILICON
Turn Off Delay Time50 ns
Power Dissipation (Max)85W Tc
Number of Elements1 Element
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25℃22A Tc
SeriesSTripFET™ II
PackagingTube
Operating Temperature-55°C~175°C TJ
JESD-609 Codee3
Part StatusObsolete
Moisture Sensitivity Level (MSL)1 (Unlimited)
Number of Terminations3Terminations
ECCN CodeEAR99
Product Attribute Attribute Value
Terminal FinishMatte Tin (Sn)
Voltage - Rated DC100V
Peak Reflow Temperature (Cel)NOT SPECIFIED
Reach Compliance Codenot_compliant
Current Rating22A
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Base Part NumberIRF5
Pin Count3
JESD-30 CodeR-PSFM-T3
Qualification StatusNot Qualified
Voltage100V
Element ConfigurationSingle
Current33A
Operating ModeENHANCEMENT MODE
Power Dissipation85W
FET TypeN-Channel
Transistor ApplicationSWITCHING
Product Attribute Attribute Value
Rds On (Max) @ Id, Vgs77m Ω @ 11A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds870pF @ 25V
Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
Rise Time45ns
Vgs (Max)±20V
Fall Time (Typ)20 ns
Continuous Drain Current (ID)22A
JEDEC-95 CodeTO-220AB
Gate to Source Voltage (Vgs)20V
Drain-source On Resistance-Max0.077Ohm
Drain to Source Breakdown Voltage100V
Avalanche Energy Rating (Eas)220 mJ
Turn Off Time-Max (toff)230ns
RoHS StatusNon-RoHS Compliant
Lead FreeContains Lead
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IRF540 Functional Alternatives

Where to use IRF540

The IRF540 is an N-channel MOSFET that can be widely used in switching and amplification applications. As a switch, it can be used as power supplies, battery management applications, DC to DC converters, etc. It can also be used at the output of microcontrollers and electronic platforms like Arduino and raspberry pi to drive high ampere loads. Other than that, it can also be used to build high-power audio amplifiers.

The way to use MOSFET and BJT is almost the same, the only difference is that MOSFET is the voltage-controlled device, and BJT is a current-controlled device. So MOSFET doesn't require current at its Gate. You can control them by voltage. The minimum voltage IRF540 required for saturation is 2V to 4V.

IRF540 Test Circuits

IRF540 Unclamped Inductive Load Test Circuit

 

IRF540 Switching Times Test Circuits For Resistive Load

 

IRF540 Test Circuit For Inductive Load Switching And Diode Recovery Times

 

IRF540 Applications

  • Fast Switching Applications

  • Uninterruptible Power Supplies

  • Battery Chargers

  • Battery Management Systems

  • Solar Battery Chargers

  • Solar Uninterruptible Power Supplies

  • Motor Driver Applications

  • Telecommunication Applications

  • Computer Related Applications

  • High-efficiency DC-DC converters

 

IRF540 Package

IRF540 Package Outline

 

IRF540 Mechanical Data

IRF540 Manufacturer

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

 

Datasheet PDF

Download datasheets and manufacturer documentation for STMicroelectronics IRF540.

IRF540 Documents

Download datasheets and manufacturer documentation for IRF540

Frequently Asked Questions

1.What is IRF540?
The IRF540 is an N-Channel powered MOSFET used for very fast switching operations as well as for amplification processes. It operates in enhancement mode. It has a lot of applications in daily life, for example, switching regulators, relay drivers, switching converters, motor drivers, high-speed power switching drivers, etc.
2.What is the symbol of MOSFET?
The line in the MOSFET symbol between the drain (D) and source (S) connections represents the transistor's semiconductive channel. If this channel line is a solid unbroken line then it represents a “Depletion” (normally-ON) type MOSFET as drain current can flow with zero gates biasing potential.
3.Can we use IGBT instead of MOSFET?
Due to the higher usable current density of IGBTs, it can usually handle two to three times more current than a typical MOSFET it replaces. This means that a single IGBT device can replace multiple MOSFETs in parallel operation or any of the super-large single power MOSFETs that are available today.
4.How to safely long run IRF540 in a circuit?
For long-term performance in your applications, it is suggested to always operate at least 20% below its maximum ratings. The maximum drain current is 23A therefore try to stay under 18A and the maximum load voltage is 100V therefore drive load under 80V. The Gate to source voltage should be under ±20V. Always use a proper heatsink with the transistor. The operating and storing temperature should always be above -55 Celsius and below +155 Celsius.
FAQ
1.What is IRF540?
The IRF540 is an N-Channel powered MOSFET used for very fast switching operations as well as for amplification processes. It operates in enhancement mode. It has a lot of applications in daily life, for example, switching regulators, relay drivers, switching converters, motor drivers, high-speed power switching drivers, etc.
2.What is the symbol of MOSFET?
The line in the MOSFET symbol between the drain (D) and source (S) connections represents the transistor's semiconductive channel. If this channel line is a solid unbroken line then it represents a “Depletion” (normally-ON) type MOSFET as drain current can flow with zero gates biasing potential.
3.Can we use IGBT instead of MOSFET?
Due to the higher usable current density of IGBTs, it can usually handle two to three times more current than a typical MOSFET it replaces. This means that a single IGBT device can replace multiple MOSFETs in parallel operation or any of the super-large single power MOSFETs that are available today.
4.How to safely long run IRF540 in a circuit?
For long-term performance in your applications, it is suggested to always operate at least 20% below its maximum ratings. The maximum drain current is 23A therefore try to stay under 18A and the maximum load voltage is 100V therefore drive load under 80V. The Gate to source voltage should be under ±20V. Always use a proper heatsink with the transistor. The operating and storing temperature should always be above -55 Celsius and below +155 Celsius.

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